The building block of all matter, including metals, is the atom. This chapter initially provides information on atomic bonding and the crystal structure of metals and alloys, followed by a description of three crystal lattice structures of metals: face-centered cubic, hexagonal close-packed, and body-centered cubic. It then describes the four main divisions of crystal defects, namely point defects, line defects, planar defects, and volume defects. The chapter provides information on grain boundaries of metals, processes involved in atomic diffusion, and key properties of a solid solution. It also explains the aspects of a phase diagram that shows what phase or phases are present in the alloy under conditions of thermal equilibrium. Finally, a discussion on the applications of equilibrium phase diagrams is presented.

In a perfect crystalline structure, there is an orderly repetition of the lattice in every direction in space. Real crystals contain a considerable number of imperfections, or defects, that affect their physical, chemical, mechanical, and electronic properties. Defects play an important role in processes such as deformation, annealing, precipitation, diffusion, and sintering. All defects and imperfections can be conveniently classified under four main divisions: point defects, line defects, planar defects, and volume defects. This chapter provides a detailed discussion on the causes, nature, and impact of these defects in metals. It also describes the mechanisms that cause plastic deformation in metals.

Alloying, heat treating, and work hardening are widely used to control material properties, and though they take different approaches, they all focus on imperfections of one type or other. This chapter provides readers with essential background on these material imperfections and their relevance in design and manufacturing. It begins with a review of compositional impurities, the physical arrangement of atoms in solid solution, and the factors that determine maximum solubility. It then describes different types of structural imperfections, including point, line, and planar defects, and how they respond to applied stresses and strains. The chapter makes extensive use of graphics to illustrate crystal lattice structures and related concepts such as vacancies and interstitial sites, ion migration, volume expansion, antisite defects, edge and screw dislocations, slip planes, twinning planes, and dislocation passage through precipitates. It also points out important structure-property correlations.

This appendix provides a detailed overview of the crystal structure of metals. It describes primary bonding mechanisms, space lattices and crystal systems, unit cell parameters, slip systems, and crystallographic planes and directions as well as plastic deformation mechanisms, crystalline imperfections, and the formation of surface or planar defects. It also discusses the use of X-ray diffraction for determining crystal structure.

This chapter presents an overview of microprocessor and application specific integrated circuit (IC) testing. It begins with a description of key industry trends that will impact how ICs will be tested in the future. Next, it provides a brief description of the most common tests applied in the IC industry, where technical issues that are causing methodology changes are emphasized. These include functional testing, structural testing, scan-based delay testing, built-in self-testing, memory testing, analog circuit testing, system-on-a-chip testing, and reliability testing. Trends discussed have driven the development of novel focus areas in test and the chapter discusses several of those areas, including test data volume containment, test power containment, and novel methods of defect-based test.

Many of the structural characteristics of steel products are a result of changes that occur during solidification, particularly volume contractions and solute redistribution. This chapter discusses the solidification process and how it affects the quality and behaviors of steel. It explains how steel shrinks as it solidifies, causing issues such as pipe and voids, and how differences in the solubility of solid and liquid steel lead to compositional heterogeneities or segregation. It describes the dendritic nature of solidification, peritectic and eutectic reactions, microporosity, macro- and microsegregation, and hot cracking, as well as the effects of solidification and remelting on castings, ingots, and continuous cast products. It explains how to determine where defects originate in continuous casters and how to control alumina, sulfide, and nitride inclusions.

In this overview of diagnosis of scan logic and diagnosis driven failure analysis, the authors explore the world of diagnosis of digital semiconductors devices. After shortly outlining the technology behind diagnosis, the main part of this article describes key improvements to the basic diagnosis tools, discussing their merits for the failure analysis engineer. The article also describes the various requirements and other considerations that typically need to be taken into account to set up a full working scan diagnosis system. It summarizes the principles of design with embedded compression technologies. Finally, several successful industrial applications of diagnosis are presented.

This chapter introduces many of the key concepts on which metallurgy is based. It begins with an overview of the atomic nature of matter and the forces that link atoms together in crystal lattice structures. It discusses the types of imperfections (or defects) that occur in the crystal structure of metals and their role in mechanical deformation, annealing, precipitation, and diffusion. It describes the concept of solid solutions and the effect of temperature on solubility and phase transformations. The chapter also discusses the formation of solidification structures, the use of equilibrium phase diagrams, the role of enthalpy and Gibb’s free energy in chemical reactions, and a method for determining phase compositions along the solidus and liquidus lines.

X-ray imaging systems have long played a critical role in failure analysis laboratories. This article begins by listing several favorable traits that make X-rays uniquely well suited for non-destructive evaluation and testing. It then provides information on X-ray equipment and X-ray microscopy and its application in failure analysis of integrated circuit (IC) packaging and IC boards. The final section is devoted to the discussion on nanoscale 3D X-ray microscopy and its applications.

This appendix provides detailed information on design deficiencies, material and manufacturing defects, and service-life anomalies. It covers ingot-related defects, forging and sheet forming imperfections, casting defects, heat treating defects, and weld discontinuities. It shows how application life is affected by the severity of service conditions and discusses the consequences of using inappropriate materials.

This chapter describes cast steel features that may be identified or attributed to component failure during heat treatment or subsequent processing or service, namely porosity (generated by the presence of gas as well as by shrinkage pores), decarburization, cold joint, and inclusions.

A typical mobile processor die may contain, among other things, a variety of high-performance as well as low-power processing cores along with 5G modems, Wi-Fi modules, image processors, GPUs, and security modules, with a total transistor count exceeding 10 billion. Such designs pose many challenges for yield ramp and diagnostics. This chapter examines these challenges and the growing demand for innovative solutions to help failure analysts quickly and accurately isolate faults. It also assesses the capabilities and future potential of ATPG scan diagnostics, streaming scan networks, and advanced fault models for diagnosing embedded memory.

Fabricated powder metallurgy (P/M) parts are evaluated and tested at several stages during manufacturing for part acceptance and process control. The various types of tests included are dimensional evaluation, density measurements, hardness testing, mechanical testing, and nondestructive testing. This chapter is a detailed account of these testing methods. It describes the four most common types of defects in P/M parts, namely ejection cracks, density variations, microlaminations, and poor sintering. The chapter discusses the capabilities and limitations of various nondestructive evaluation methods to flaw detection in P/M parts. The nondestructive evaluation methods covered are mechanical proof testing, metallography, liquid penetrant crack detection, filtered particle crack detection, magnetic particle crack inspection, direct current resistivity testing, x-ray radiography, computed tomography, gamma-ray density determination, and ultrasonic techniques.

This chapter assesses the potential impact of neural networks on package-level failure analysis, the challenges presented by next-generation semiconductor packages, and the measures that can be taken to maximize FA equipment uptime and throughput. It presents examples showing how neural networks have been trained to detect and classify PCB defects, improve signal-to-noise ratios in SEM images, recognize wafer failure patterns, and predict failure modes. It explains how new packaging strategies, particularly stacking and disintegration, complicate fault isolation and evaluates the ability of various imaging methods to locate defects in die stacks. It also presents best practices for sample preparation, inspection, and navigation and offers suggestions for improving the reliability and service life of tools.

This article introduces the wafer-level fault localization failure analysis (FA) process flow for an accelerated yield ramp-up of integrated circuits. It discusses the primary design considerations of a fault localization system with an emphasis on complex tester-based applications. The article presents examples that demonstrate the benefits of the enhanced wafer-level FA process. It also introduces the setup of the wafer-level fault localization system. The application of the wafer-level FA process on a 22 nm technology device failing memory test is studied and some common design limitations and their implications are discussed. The article presents a case study and finally introduces a different value-add application flow capitalizing on the wafer-level fault localization system.

The ultimate goal of the failure analysis process is to find physical evidence that can identify the root cause of the failure. Transmission electron microscopy (TEM) has emerged as a powerful tool to characterize subtle defects. This article discusses the sample preparation procedures based on focused ion beam milling used for TEM sample preparation. It describes the principles behind commonly used imaging modes in semiconductor failure analysis and how these operation modes can be utilized to selectively maximize signal from specific beam-specimen interactions to generate useful information about the defect. Various elemental analysis techniques, namely energy dispersive spectroscopy, electron energy loss spectroscopy, and energy-filtered TEM, are described using examples encountered in failure analysis. The origin of different image contrast mechanisms, their interpretation, and analytical techniques for composition analysis are discussed. The article also provides information on the use of off-axis electron holography technique in failure analysis.

Porosity in aluminum is caused by the precipitation of hydrogen from liquid solution or by shrinkage during solidification, and more usually by a combination of these effects. Nonmetallic inclusions entrained before solidification influence porosity formation and mechanical properties. This chapter describes the causes and control of porosity and inclusions in aluminum castings as well as the combined effects of hydrogen, shrinkage, and inclusions on the properties of aluminum alloys. In addition, it discusses the applications of radiography to reveal internal discontinuities in aluminum.

This chapter provides an overview of the fundamental material- and process-related parameters of quenching on residual stress, distortion control, and cracking. It begins with a description of phase transformations during heating and quenching of steel. This is followed by a section on the effects of materials and quench process design on distortion of steel during heat treating. Details on stress raisers and their role in quench cracking are then presented. The chapter ends with various selected case histories of failures attributed to the quenching process.

This chapter summarizes critical gaps and long-term needs in failure analysis technology as it relates to logic and memory devices and IC packages. It assesses the impact of vertical integration, new materials, and expansion in the third dimension on volume analysis, sample preparation and measurement methods, and cross-sectioning and imaging.

The complexity of semiconductor chips and their packages has continuously challenged the known methods to analyze them. With larger laminates and the inclusion of multiple stacked die, methods to analyze modern semiconductor products are being pushed toward their limits to support these 2.5D and 3D packages. This article focuses on these methods of fault isolation, non-destructive imaging, and destructive techniques through an iterative process for failure analysis of complex packages.