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in LADA and SDL: Powerful Techniques for Marginal Failures
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 28 This LADA image shows the data path transistors (green sites) in a race versus the clock path transistors (red sites). (a) is a lower magnification showing the entire race. (b) shows the higher magnification (air gap lens) of several data path interaction sites. Note that the data
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in Failure Localization with Active and Passive Voltage Contrast in FIB and SEM[1]
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Fig. 9 The s/d contacts of n-MOS transistors are showing different PVC depending on whether the gate is opened or closed
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Published: 01 November 2019
Figure 33 Four probe characterization (Ids vs Vgs, step Vds) of a passing transistors with no dislocation shows no Id leakage when the Gate Voltage (Vg) = 0V.
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Published: 01 November 2019
Figure 41 Transistor characterization results for pfet pullup transistors for the failing and several passing bitcells. The Id vs Vg curves shows the Vt value is on the high side of the distribution causing the Id drive current to be on the low side of the distribution.
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Published: 01 November 2019
Figure 42 Transistor characterization results for nfet pulldwon transistors for the failing and several passing bitcells. The Id vs Vg curves shows the Vt value is on the low side of the distribution causing the Id drive current to be on the high side of the distribution.
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in Differentiating between EOS and ESD Failures for ICs[1]
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 24 Field return where the damage is in the transistors and at the die surface.
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Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110279
EISBN: 978-1-62708-247-1
... Abstract Transistors are the most important active structure of any semiconductor component. Performance characteristics of such devices within the specifications are key to ensuring proper functionality and long-term reliability of the product. In this article, a summary of the semiconductor...
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in Cold Spray Coating Applications in Protection and Manufacturing
> High Pressure Cold Spray: Principles and Applications
Published: 01 June 2016
Fig. 7.17 Soldered power transistor on an aluminum heat sink with a cold-sprayed copper layer. Source: Ref 7.14
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Published: 01 August 2013
Fig. 4.14 A p-n-p transistor. A small input signal imposed on the emitter causes holes to penetrate the base and allows current in the collector. Because the voltage across the collector is high, the output signal is at high voltage. Source: Ref 4.1 .
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in Leading Edge Technologies: Backside Power Delivery
> Electronic Device Failure Analysis Technology Roadmap
Published: 01 November 2023
Fig. 14 Transistor threshold voltage shift caused by oxide charging from x-ray dosing, illustrating the effect of fixed oxide trapped charge on n-and p-MOS devices. Copyright 2006 IEEE ( Ref 21 )
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in Leading Edge Technologies: Backside Power Delivery
> Electronic Device Failure Analysis Technology Roadmap
Published: 01 November 2023
Fig. 15 Transistor threshold voltage shift resulting from x-ray dosing in a 5 nm process IC. Percent change in V T plotted against cumulative x-ray exposure time (s). Two linear regimes are apparent; dashed lines were added as guides ( Ref 23 ).
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Published: 01 November 2023
Fig. 1 Trend of transistor architecture evolution from Planar FET, FinFET, to GAAFET.
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Published: 01 November 2023
Fig. 2 Transistor pathways. (a) Source: 2019 IEEE International Electron Devices Meeting (IEDM) . (b) Source: Applied Materials
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![Schematic drawing of a bipolar <span class="search-highlight">transistor</span> [24] .](https://asm.silverchair-cdn.com/asm/content_public/books/87/parts/t91110180/2/s_t91110180-f19.png?Expires=2147483647&Signature=lLXzKDdIlyl7ib~~JhvZYXm1q2AH~6xRs-lJjOXuEjaGyoosW0cYom-LaEcdvQSDrQm6qkcJ-xRK3aq385mtRleadYya1afBBuCEEQSFQkPsuQzn72RESAiP-POqYOyjn5ZOatV8~TqxKPU65bmej7BW8EN8eXh6rER3oGDztpEWaxjjNIfUF3GJaZcQzRgQN-xb4fJWDnGMxSctP1NAMu3sQUEd8FNcv-M1KrI-vGU2garRBtV8t5dp1~cQF3v5Es4p2x5mPd6PnOvZMLRFUBhxLWnlCdaL-kMtuCPvdktnBp2zpwQvaQDS1krSVzOsEQVlN7bgpWIzisqM9pmXtA__&Key-Pair-Id=APKAIE5G5CRDK6RD3PGA)
in Photon Emission in Silicon Based Integrated Circuits
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 19 Schematic drawing of a bipolar transistor [24] .
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Published: 01 November 2019
Figure 12 Example of Id vs Vgs, step Vds curves for an n-channel transistor. The threshold (Vt) and drive current (Id) at nominal operating voltage (Vnom) are measurable.
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Published: 01 November 2019
Figure 13 Example of Id vs Vgs, step Vds curves for an p-channel transistor. The threshold (Vt) and drive current (Id) at nominal operating voltage (Vnom) are measurable.
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Published: 01 November 2019
Figure 14 Example of Id vs Vds, step Vgs curves for an n-channel transistor. The Linear region and Saturation region of operation for the transistor can be evaluated.
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Published: 01 November 2019
Figure 15 Example of Id vs Vds, step Vgs curves for an p-channel transistor. The Linear region and Saturation region of operation for the transistor can be evaluated.
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Published: 01 November 2019
Figure 16 Example of Id vs Vgs; Vds = 0.1V curves for an n-channel transistor. A tangential line to the maximum transconductance location on the curve is drawn. The point of intersection on the Vg axis is the threshold (Vt) value for the transistor.
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