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Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110285
EISBN: 978-1-62708-247-1
... Abstract This article addresses the ancillary issues regarding the nanoprobing and characterization of transistors, probing copper metallization layers, and the various imaging techniques. The discussion includes several characterization examples of known transistor failure types, namely four...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110279
EISBN: 978-1-62708-247-1
... Abstract Transistors are the most important active structure of any semiconductor component. Performance characteristics of such devices within the specifications are key to ensuring proper functionality and long-term reliability of the product. In this article, a summary of the semiconductor...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110180
EISBN: 978-1-62708-247-1
... contactless characterization for the most important electronic device, the MOS - Field Effect Transistor, the heart of ICs and their basic digital element, the CMOS inverter. The article discusses the specification and selection of detectors for proper PE applications. The main topics are image resolution...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110323
EISBN: 978-1-62708-247-1
... identification, and circuit editing. The article also presents methods to prepare electron beam probing samples where some remaining silicon is required for the transistor functions and transmission electron microscope samples from units where the substrate silicon has been partially or completely removed...
Book Chapter

Series: ASM Technical Books
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.tb.ems.t53730037
EISBN: 978-1-62708-283-9
... significance of energy bands, intrinsic and extrinsic conduction, and the properties of compound semiconductors. It also covers semiconductor devices, including p-n junctions, light emitting diodes, transistors, and piezoelectric crystals. electrical behavior light emitting diodes transistors p-n...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110613
EISBN: 978-1-62708-247-1
... transistors, ” J. of Electronic Testing: Theory and Applications (JETTA) , pp. 229 - 239 , ( 1996 ). 10.1007/BF00133386 8. Degraeve R. , Kaczer B. , De Keersgieter A. , and Groeseneken G. , “ Relation between breakdown mode and breakdown location in short channel NMOSFETs...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110228
EISBN: 978-1-62708-247-1
...] published the seminal paper on Resistive Interconnect Localization, later [2] generalized to Soft Defect Localization (SDL). The SDL technique takes advantage of the marginality of failures to localize the circuit causing the failure. SDL uses a focused ~1300nm laser to locally heat transistors and...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110499
EISBN: 978-1-62708-247-1
... different commands are t RCD (row to column delay), t RP (row to precharge) and t WR (write timing) that parametrically influence the result of an electronic test of the DRAM cells. A schematic of a DRAM cell is shown in Fig. 2 . The cell consists of a capacitor and a normally off NFET transistor...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110652
EISBN: 978-1-62708-247-1
... multiple fingered ESD protection structure connected also to the Vss bus line (left side looking at picture). Figure 3 Hot spot location (circled) revealed by liquid crystal for a short circuit in the ESD protective circuit (transistors) at the pad. Note that for the I/O to Vcc pin...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110269
EISBN: 978-1-62708-247-1
... transistors are involved, PVC generation and interpretation is much more complicated. In the case of substrate contacts the doping has to be taken into account. When large structures are investigated, their capacitance plays an important role. Even transistors can affect the PVC generation when they are...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110262
EISBN: 978-1-62708-247-1
... ICs. Electrical Fault Isolation (EFI) becomes more and more complex with additional levels of interconnects, smaller feature sizes, and higher transistor densities in modern semiconductor devices. These challenges increase FA cycle time significantly, as illustrated in Figure 1 . Figure 1...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110351
EISBN: 978-1-62708-247-1
... enable new functionality. [2] The purpose of a circuit edit is to correct a design issue. Circuit edit does not often address individual transistor performance issues as the gallium (Ga) ion used in most FIB systems is a semiconductor dopant, but with a neon (Ne) ion this should be much less...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110196
EISBN: 978-1-62708-247-1
... signal due to the resistance variation and transistor amplification [4] . To gain insight into the heating dynamics, a 3D finite element model of a 1µm x 0.5µm aluminum line embedded in silicon dioxide was studied. A schematic diagram of the modeled structure is shown in Figure 2 . The material...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 August 2015
DOI: 10.31399/asm.tb.piht2.t55050025
EISBN: 978-1-62708-311-9
... continued technology advances in the ability of silicon-controlled rectifiers (SCRs, or thyristors) and transistors to operate at higher voltages, faster switching speeds, and higher temperatures with better operating characteristics. Newer induction systems are more efficient, more reliable, and more...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110244
EISBN: 978-1-62708-247-1
... generated photo-carriers will modify the switching characteristics of the transistors whose rise/fall times one wishes to measure. This effect is well-known and has been used to the advantage of FA engineers for many years, specifically through the implementation of Laser-Assisted Device Alteration (LADA...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110673
EISBN: 978-1-62708-247-1
... (CMOS) circuits, BiCMOS circuits, gallium arsenide circuits, indium phosphide circuits, silicon carbide transistors, gallium nitride diodes, complex heterojunction structures, and microelectromechanical systems (MEMS). We also have a variety of design complexities, including discrete components, digital...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110379
EISBN: 978-1-62708-247-1
... permits the successful identification of the fail mechanism [1] . In this article, two types of different semiconductor die level backend of line (BEOL) technologies will be presented: aluminum metallization and copper metallization. To connect the transistors in the chip, multiple layers of...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110634
EISBN: 978-1-62708-247-1
.... , Meyer W. and Glaser U. , “ CMOS Bridges and Resistive Transistor Faults: Iddq versus Delay Effects, ” Int. Test Conf. , 1993 , pp. 83 - 91 . 10.1109/TEST.1993.470715 [15] Hao H. and McCluskey E. , “ Analysis of Gate Oxide Shorts in CMOS Circuits, ” IEEE Trans. of...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 March 2012
DOI: 10.31399/asm.tb.pdub.t53420289
EISBN: 978-1-62708-310-2
... were failing where the gold lead wires were fused to aluminized transistor and integrated circuits. One of the earliest uses of phase diagrams in alloy development was at the suggestion in 1919 by the U.S. Bureau of Standards that precipitation of a second phase from solid solution...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110461
EISBN: 978-1-62708-247-1
... dopant profiling of shallow p-n junctions in source/drain regions of the transistors. When an electron transparent single crystalline substrate containing the p-n junction is illuminated with a coherent electron beam or a ‘plane electron wave’, the electrostatic potential gradient across the junction...