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stacking fault

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Series: ASM Technical Books
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.tb.ahsssta.t53700135
EISBN: 978-1-62708-279-2
... Abstract This chapter briefly discusses the characteristics of mechanical twins and stacking faults in close-packed planes. It provides an overview of the composition, microstructures, thermodynamics, processing, deformation mechanism, mechanical properties, formability, and special attributes...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 August 2005
DOI: 10.31399/asm.tb.mmfi.t69540357
EISBN: 978-1-62708-309-6
... of stacking faults. crystal lattice structure slip deformation stacking fault twinning EXCEPT FOR SPECIALLY PRODUCED ALLOYS that solidify into a single crystal, most metallic materials have a polycrystalline structure comprised of many crystalline grains separated by grain-boundary...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110111
EISBN: 978-1-62708-247-1
... Using 3D Magnetic Field Imaging , 2014 . [10] Orozco A. , Rusli F. , Rowlett C. , Zee B. , Qiu W. , Chin J. M. , and Foo Fang-Jie . 3d fault isolation in 2.5d device comprising high bandwidth memory (hbm) stacks and processor unit using 3d magnetic field...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2009
DOI: 10.31399/asm.tb.sfa.t52780047
EISBN: 978-1-62708-268-6
... Abstract This chapter covers special fault-tree analysis topics, including the use of transfer symbols, INHIBIT gates, sequential AND gates, state-of-the-part versus state-of-the-system considerations, and the fault tree to identify redundancy-defeating failures. INHIBIT gates sequential...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110132
EISBN: 978-1-62708-247-1
... Abstract Time-domain based characterization methods, mainly time-domain reflectometry (TDR) and time-domain transmissometry (TDT), have been used to locate faults in twisted cables, telegraph lines, and connectors in the electrical and telecommunication industry. This article provides a brief...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110550
EISBN: 978-1-62708-247-1
... Symposium for Testing and Failure Analysis , Portland , 2015 . [10] Orozco D. , Rusli M. , Rowlett M. , See M. , Qiu W. , Chin J. and Foo F.-J. , “ 3D Fault Isolation in 2.5D Device comprising High Bandwidth Memory (HBM) Stacks and Processor Unit Using 3D Magnetic...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110001
EISBN: 978-1-62708-247-1
... Abstract This article introduces the wafer-level fault localization failure analysis (FA) process flow for an accelerated yield ramp-up of integrated circuits. It discusses the primary design considerations of a fault localization system with an emphasis on complex tester-based applications...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110016
EISBN: 978-1-62708-247-1
... die for further electrical testing and fault isolation is not a trial task. Top die removal or backside milling may be required if the failing die happens to be in the middle or at the bottom of the stacked dice. For CSPs in WLCSP form, different challenges arise. These bare-die-like devices are not...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110025
EISBN: 978-1-62708-247-1
...-destructive localization techniques. The techniques considered for advanced fault isolation are magnetic current imaging for shorts and opens; infrared thermography for electrical shorts; time-domain-reflectometry for shorts and opens; scanning acoustic microscopy; and 2D/3D X-Ray microscopy. The individual...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110180
EISBN: 978-1-62708-247-1
... Abstract Photon emission (PE) is one of the major optical techniques for contactless isolation of functional faults in integrated circuits (ICs) in full electrical operation. This article describes the fundamental mechanisms of PE in silicon based ICs. It presents the opportunities of...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 June 2008
DOI: 10.31399/asm.tb.emea.t52240017
EISBN: 978-1-62708-251-8
... stacking faults depend on the crystalline structure. Volume defects, such as porosity and microcracks, almost always reduce strength and fracture resistance. The reductions can be quite substantial, even when the defects constitute only several volume percent. Shrinkage during...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.tb.ahsssta.t53700199
EISBN: 978-1-62708-279-2
... 0.0060 Source: Ref 13.4 The high work-hardening rate during plastic deformation of Fe-30Mn is attributed to its low stacking fault energy (SFE). The high strength and ductility result from the complex combination of deformation mechanisms including dislocation glide, martensitic phase...
Book Chapter

Series: ASM Technical Books
Publisher: ASM International
Published: 01 January 2015
DOI: 10.31399/asm.tb.spsp2.t54410233
EISBN: 978-1-62708-265-5
... content on the stacking fault and austenite/ε-martensite interfacial energies in Fe-Mn-(Al-Si) steels investigated by experiment and theory , Acta Mater. , 2014 10.1016/j.actamat.2014.01.001 12.93 Pierce D.T. , Bentley J. , Jimenez J.A. , and Wittig J.E. , Stacking fault...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2010
DOI: 10.31399/asm.tb.sap.t53000017
EISBN: 978-1-62708-313-3
... diffusion, particularly at high temperatures. Similar considerations apply to the hardening of the γ′ phase. Solid-solution hardening also has the effect of decreasing the stacking fault energy (SFE) in the crystal lattice, leading primarily to inhibition of dislocation cross slip, which is the main...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 March 2012
DOI: 10.31399/asm.tb.pdub.t53420363
EISBN: 978-1-62708-310-2
... referred to as the coordination number, CN), that is, the fcc structure has a CN = 12. As shown in Fig. A.11 , the stacking sequence for the fcc structure is ABCABC . The fcc structure is found in many important metals such as aluminum, copper, and nickel. Fig. A.10 Face-centered cubic (fcc...
Series: ASM Technical Books
Publisher: ASM International
Published: 31 December 2020
DOI: 10.31399/asm.tb.phtbp.t59310001
EISBN: 978-1-62708-326-3
... occur within crystals and are dependent on the crystalline structure. Surface defects within a crystal lattice can occur by: Stacking faults , where the stacking sequence of planes is not consistent in the lattice, as described under the “ Face-Centered Cubic System ” section in this chapter...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 October 2011
DOI: 10.31399/asm.tb.mnm2.t53060013
EISBN: 978-1-62708-261-7
... Democritus had it right: All matter, in any form (gas, liquid, or solid) consists of small atoms—so small that it would take a stack of approximately 500,000 atoms to equal the thickness of a piece of paper. More than 2000 years would pass before a viable scientific theory of the atom would be developed, and...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2001
DOI: 10.31399/asm.tb.aub.t61170540
EISBN: 978-1-62708-297-6
... structure with a very low stacking fault energy. The instability arises from the fact that elemental cobalt, if cooled extremely slowly, transforms from an fcc to a hcp crystal structure at 417 °C (783 °F). In most cobalt alloys, the transformation temperature is somewhat higher. Because of the sluggish...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2008
DOI: 10.31399/asm.tb.ssde.t52310069
EISBN: 978-1-62708-286-0
... is the bcc magnetic form, while ε is a nonmagnetic, hcp (hexagonal close-packed) version. The formation of ε versus α′ is related to the stacking fault energy of the alloy, which is given by ( Ref 6 ): (Eq 2) Y 300 SF ( mJ m − 2 ) = Y 0 SF...
Book Chapter

Series: ASM Technical Books
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.tb.ahsssta.t53700023
EISBN: 978-1-62708-279-2
... States presentation at Great Design in Steels Seminar , March 8 , 2006 ( Livonia, MI ), AUTOSTEEL 2.9 Allain S. , Chateau J.-P. , Bouaziz O. , Migot S. , and Guelton N. , Correlations between the Calculated Stacking Fault Energy and the Plasticity Mechanisms in Fe-Mn...