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sputtering

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Published: 01 November 2019
Figure 45 FIB cross section images of direct Ne and Ga ion sputtering into Si and Cu samples at a range of energies from 9 KeV to 35 keV. [95] More
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Published: 01 January 2015
Fig. 22.6 Schematic diagram of mechanisms of sputtering. RF, radio frequency; dc, direct current. Source: Ref 22.14 More
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Published: 01 January 2015
Fig. 22.7 Schematic diagram of magnetron sputtering mechanisms. Source: Ref 22.14 More
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Published: 01 March 2002
Fig. 6.23 A vacuum sputtering device used to deposit a thin coating of gold, or some other element, onto the surface of a SEM or EMPA specimen. Source: Polaron Instruments, Inc. More
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Published: 01 December 2003
Fig. 9 Comparison of a hypothetical, “sputtering-free” kinetic of compound zone growth in plasma nitriding of 3% Cr-Mo-V steel at 540 °C (1000 °F) (curve with the middle final value) and 36H3M 3% Cr-Mo steel at 530 °C (985 °F) ( Ref 14 ) (curve with the lowest final value) with γ′ compound More
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Published: 01 November 2013
Fig. 11 Schematic of the basic sputtering process. Source: Ref 6 More
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Published: 01 January 1998
Fig. 16-8 Schematic of sputtering mechanisms. Source: Ref 31 More
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Published: 01 January 1998
Fig. 16-9 Schematic of magnetron sputtering. Source: Ref 31 More
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Published: 01 July 2009
Fig. 22.6 Schematic diagrams of planar diode and triode sputtering systems. Source: Hill 1986 More
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Published: 01 July 2009
Fig. 22.7 Schematic of a planar electrode system used for sputtering. Source: Thornton 1982b More
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Published: 01 July 2009
Fig. 22.9 Some schematic arrangements of magnetron sputtering targets. Source: Mattox 1998 More
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Published: 01 July 2009
Fig. 22.10 Direct current diode planar magnetron sputtering configuration. Source: Mattox 1998 More
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Published: 01 July 2009
Fig. 22.11 Sputtering yields of several materials bombarded with argon ions at various energies. The materials listed in parentheses have similar sputtering-yield curves. Source: Mattox 1998 More
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Published: 01 July 2009
Fig. 22.12 Variation of sputtering yields of tantalum as a function of the total pressure of the vacuum system. Source: Hill 1986 More
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Published: 01 July 2009
Fig. 22.14 Ion energy dependence of beryllium sputtering yields by D + and He + ions at room temperature: Be-D + data, • and 2; Be-He + data, ▴ and 4. Theoretical calculations: Be-D + , 1; Be-He + , 3. Source: Bohdansky and Roth 1984 More
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Published: 01 July 2009
Fig. 22.18 Self-sputtering yield of beryllium as a function of the incident angle of 1 keV Be + ions. Curve 1 is calculated; curve 2 (+ + +) is from Hechtl et al. [1995] ; curve 3 (•••) is experimental from TShP-type beryllium. Source: Guseva et al. 1997 More
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Published: 01 July 2009
Fig. 22.22 Effect of sputtering pressure on residual stresses in beryllium and beryllium boride (BeB) sputter-deposited films. RF, radio frequency; DC, direct current. Source: Hseieh 1988 More
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Published: 01 November 2019
Figure 1 Modeled sputter yield (y) and implant depth of Cs + , Xe + , Ga + , Ar + , Ne + , and He + with a beam energy of 30keV in silicon. For each ion, 30 trajectories are shown in red, while the resulting silicon atom recoils are shown in green. The x-axis radial spread shown for each More
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Published: 01 November 2019
Figure 19 SEM image of an aluminum line with 10 nm of Au/Pd sputter coating. All the small dark jagged lines are sputter grain artifacts. More
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Published: 01 November 2019
Figure 28 Secondary electron image of aluminum metal sputter coated with 10 nm of Au/Pt. The image has high resolution, but the original surface detail is obscured and the sputter coating grains introduce artifacts seen as jagged dark lines. More