Many defects generate excessive heat during operation; this is due to the power dissipation associated with the excess current flow at the defect site. There are several thermal detection techniques for failure analysis and this article focuses on infrared thermography with lock-in detection, which detects an object's temperature from its infrared emission based on blackbody radiation physics. The basic principles and the interpretation of the results are reviewed. Some typical results and a series of examples illustrating the application of this technique are also shown. Brief sections are devoted to the discussion on liquid-crystal imaging and fluorescent microthermal imaging technique for thermal detection.

Post-mortem analysis of photovoltaic modules that have degraded performance is essential for improving the long term durability of solar energy. This article focuses on a general procedure for analyzing a failed module. The procedure includes electrical characterization followed by thermal imaging such as forward bias, reverse bias, and lock-in, and emission imaging such as electroluminescence and photoluminescence imaging.

This chapter discusses the context in which metallography is used and some of the challenges of analyzing three-dimensional structures from a two-dimensional perspective. It describes the hierarchical nature of metals, the formation of grain boundaries, and the notable characteristics of microstructure. It explains how microstructure can be represented qualitatively by points, lines, surfaces, and volumes associated to a large extent with grain contact, and how qualitative features (including grains) can be quantified based on cross-sectional area, volume fraction, density, distribution, and other such metrics.

This article reviews the basic physics behind active photon injection for local photocurrent generation in silicon and thermal laser stimulation along with standard scanning optical microscopy failure analysis tools. The discussion includes several models for understanding the local thermal effects on metallic lines, junctions, and complete devices. The article also provides a description and case study examples of multiple photocurrent and thermal injection techniques. The photocurrent examples are based on Optical Beam-Induced Current and Light-Induced Voltage Alteration. The thermal stimulus examples are Optical Beam-Induced Resistance Change/Thermally-Induced Voltage Alteration and Seebeck Effect Imaging. Lastly, the article discusses the application of solid immersion lenses to improve spatial resolution.

X-ray imaging systems have long played a critical role in failure analysis laboratories. This article begins by listing several favorable traits that make X-rays uniquely well suited for non-destructive evaluation and testing. It then provides information on X-ray equipment and X-ray microscopy and its application in failure analysis of integrated circuit (IC) packaging and IC boards. The final section is devoted to the discussion on nanoscale 3D X-ray microscopy and its applications.

This chapter describes three approaches for 3D hot-spot localization of thermally active defects by lock-in thermography (LIT). In the first section, phase-shift analysis for analyzing stacked die packages is performed. The second example employs defocusing sequences for the localization of resistive electrical shorts in 3D architectures, and the third operates in cross sectional LIT mode to investigate defects in the insulation liner of Through Silicon Vias. All three approaches allow for a precise localization of thermally active defects in all three spatial dimensions to guide subsequent high-resolution physical analyses.

Time-domain based characterization methods, mainly time-domain reflectometry (TDR) and time-domain transmissometry (TDT), have been used to locate faults in twisted cables, telegraph lines, and connectors in the electrical and telecommunication industry. This article provides a brief review of conventional TDR and its application limitations to advanced packages in semiconductor industry. The article introduces electro optical terahertz pulse reflectometry (EOTPR) and discusses how its improvements of using high frequency impulse signal addressed application challenges and quickly made it a well-adopted tool in the industry. The third part of this article introduces a new method which combines impulse signal and the TDT concept, and discusses a combo TDR and TDT method. Cases studies and application notes are shared and discussed for each technique. Application benefits and limitations of these techniques (TDR, EOTPR, and combo TDR/TDT) are summarized and compared.

Photon emission (PE) is one of the major optical techniques for contactless isolation of functional faults in integrated circuits (ICs) in full electrical operation. This article describes the fundamental mechanisms of PE in silicon based ICs. It presents the opportunities of contactless characterization for the most important electronic device, the MOS - Field Effect Transistor, the heart of ICs and their basic digital element, the CMOS inverter. The article discusses the specification and selection of detectors for proper PE applications. The main topics are image resolution, sensitivity, and spectral range of the detectors. The article also discusses the value and application of spectral information in the PE signal. It describes state of the art IC technologies. Finally, the article discusses the applications of PE in ICs and also I/O devices, integrated bipolar transistors in BiCMOS technologies, and parasitic bipolar effects like latch up.

This article introduces the wafer-level fault localization failure analysis (FA) process flow for an accelerated yield ramp-up of integrated circuits. It discusses the primary design considerations of a fault localization system with an emphasis on complex tester-based applications. The article presents examples that demonstrate the benefits of the enhanced wafer-level FA process. It also introduces the setup of the wafer-level fault localization system. The application of the wafer-level FA process on a 22 nm technology device failing memory test is studied and some common design limitations and their implications are discussed. The article presents a case study and finally introduces a different value-add application flow capitalizing on the wafer-level fault localization system.

This chapter covers the emerging practice of quantitative microscopy and its application in the study of the microstructure of metals. It describes the methods used to quantify structural gradients, volume fraction, grain size and distribution, and other features of interest. It provides examples showing how the various features appear, how they are measured, and how the resulting data are converted into usable form. The chapter also discusses the quantification of fracture morphology and its correlation with material properties and behaviors.

Diagnosing the root cause of a failure is particularly challenging if the symptom of the failure is not consistently observable. This article focuses on Laser Assisted Device Alteration/Soft Defect Localization (LADA/SDL), a global fault isolation technique, for detecting such failures. The discussion begins with a section describing the three steps in LADA/SDL analysis setup: create the test loop with the fail flag and loop trigger, select the laser dwell time, and select the shmoo bias point. An overview of LADA/SDL workflow is then presented followed by a brief section on time-resolved LADA. The closing pages of the article consider in detail SDL laser interaction physics and LADA laser interaction physics.

This article provides an overview of how to use the scanning electron microscope (SEM) for imaging integrated circuits. The discussion covers the principles of operation and practical techniques of the SEM. The techniques include sample mounting, sample preparation, sputter coating, sample tilt and image composition, focus and astigmatism correction, dynamic focus and image correction, raster alignment, and adjusting brightness and contrast. The article also provides information on achieving ultra-high resolution in the SEM. It concludes with information on the general characteristics and applications of environmental SEM.

Magnetic field imaging (MFI), generally understood as mapping the magnetic field of a region or object of interest using magnetic sensors, has been used for fault isolation (FI) in microelectronic circuit failure analysis for almost two decades. Developments in 3D magnetic field analysis have proven the validity of using MFI for 3D FI and 3D current mapping. This article briefly discusses the fundamentals of the technique, paying special attention to critical capabilities like sensitivity and resolution, limitations of the standard technique, sensor requirements and, in particular, the solution to the 3D problem, along with examples of its application to real failures in devices.

Fabricated powder metallurgy (P/M) parts are evaluated and tested at several stages during manufacturing for part acceptance and process control. The various types of tests included are dimensional evaluation, density measurements, hardness testing, mechanical testing, and nondestructive testing. This chapter is a detailed account of these testing methods. It describes the four most common types of defects in P/M parts, namely ejection cracks, density variations, microlaminations, and poor sintering. The chapter discusses the capabilities and limitations of various nondestructive evaluation methods to flaw detection in P/M parts. The nondestructive evaluation methods covered are mechanical proof testing, metallography, liquid penetrant crack detection, filtered particle crack detection, magnetic particle crack inspection, direct current resistivity testing, x-ray radiography, computed tomography, gamma-ray density determination, and ultrasonic techniques.

This chapter describes the phenomenological aspects of fatigue and how to assess its effect on the life of components operating in high-temperature environments. It explains how fatigue is measured and expressed and how it is affected by loading conditions (stress cycles, amplitude, and frequency) and factors such as temperature, material defects, component geometry, and processing history. It provides a detailed overview of the damage mechanisms associated with high-cycle and low-cycle fatigue as well as thermal fatigue, creep-fatigue, and fatigue-crack growth. It also demonstrates the use of tools and techniques that have been developed to quantify fatigue-related damage and its effect on the remaining life of components.

This article covers common techniques for surface characterization, including the modern scanning electron microscopy and methods for the chemical characterization of surfaces by Auger electron spectroscopy, X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry. The principles of surface analysis and some of the applications of the technique in polymer failure studies are also provided.

The scanning acoustic microscope (SAM) is an important tool for development of improved molded and flip chip packages. The SAM used for integrated circuit inspection is a hybrid instrument with characteristics of both the Stanford SAM and the C-scan recorder. This chapter presents the historical development of SAM for integrated circuit package inspection, SAM theory, and analysis considerations. Case studies are presented to illustrate the practical applications of SAM. Other non-destructive imaging tools are briefly discussed, as well as SAM challenges and methods including spectral signature analysis and GHz-SAM.

The formation of defects in materials that have been fusion welded is a major concern in the design of welded assemblies. This article describes four types of defects that, in particular, have been the focus of much attention because of the magnitude of their impact on product quality. Colloquially, these four defect types are known as hot cracks, heat-affected zone microfissures, cold cracks, and lamellar tearing.

With the commercialization of heavier and lighter ion beams, adoption of focused ion beam (FIB) use for analysis of challenging regions of interest (ROI) has grown. In this chapter, the authors focus on highlighting commercially available and complementary FIB technologies and their implementation challenges and application trends.

This chapter discusses some of the more advanced methods and procedures used in failure analysis, including in-service material sampling, in situ microstructure analysis, and a form of punch testing that can determine the fracture toughness of any material from a tiny specimen. The chapter also covers quantitative fractography, fracture surface topography analysis, and the use of oxide dating as well as fault tree and failure modes and effects analysis (FMEA) and computational techniques.