1-10 of 10 Search Results for

silicon drift detector

Follow your search
Access your saved searches in your account

Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110434
EISBN: 978-1-62708-247-1
... scanning electron microscope chamber including the lithium-drifted EDS detector, silicon drift detector (SDD), and wavelength dispersive X-ray detector. The article then provides information on qualitative and quantitative X-ray analysis programs followed by a discussion on EDS elemental mapping. The...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110351
EISBN: 978-1-62708-247-1
... tools for first silicon debug. The etching capabilities of circuit edit FIB tools are then discussed, providing information on chemistry assisted etching in silicon oxides and low-k dielectrics. The chapter also discusses the requirements and procedures involved in edit operation: high aspect ratio...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110461
EISBN: 978-1-62708-247-1
... function of the element detected and the composition by volume in which the element is present. A reference sample with known composition is required for meaningful quantitative analysis. Using state-of-the-art silicon drift detectors (SDD) ultra-thin or windowless detector, elements with atomic weights...
Book Chapter

Series: ASM Technical Books
Publisher: ASM International
Published: 01 April 2013
DOI: 10.31399/asm.tb.imub.t53720139
EISBN: 978-1-62708-305-8
... beam is analyzed electronically, photon by photon, as illustrated in Fig. 5 . The x-ray beam is directed into a semiconductor device (a lithium-drifted silicon crystal). As each x-ray photon enters the detector crystal, it creates numerous electron-hole pairs as it expends its energy interacting with...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110335
EISBN: 978-1-62708-247-1
... using neon as the primary ion. Figure 9 An example of SIMS depth profiling of a 500 eV 11 B implant in silicon. Parallel detection is possible with a magnetic sector so multiple elements can be detected simultaneously, however, the number of elements is limited to the number of detectors...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110413
EISBN: 978-1-62708-247-1
... large sample areas can be scanned. Under the right circumstances SEM can achieve 1 nm resolution which is very close to TEM and AFM. It is also relatively simple and inexpensive to add an energy dispersive x-ray detector (EDX) to a SEM which then provides a chemical micro-analysis capability (see the...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110244
EISBN: 978-1-62708-247-1
... utilized for observing circuit functionality at internal nodes interrogated through an exposed silicon substrate. It has enabled the fault isolation of contemporary integrated circuits (IC) for many decades and plays a pivotal role in the FA workflow. The primary objective of the FA workflow is to...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110285
EISBN: 978-1-62708-247-1
... resistance change imaging nanoprobe scanning capacitance imaging transistors In the late 1990s to early 2000’s, the semiconductor industry was in the process of transitioning from aluminum metallization and Boron Phosphorus Silicon Glass (BPSG) inter-level dielectric...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110447
EISBN: 978-1-62708-247-1
... accelerated ions then travel over a drift path to the detector. The lighter ions fly with a higher velocity and arrive at the detector before the heavier ions. Measuring the flight time for each ion allows the determination of its mass. Measuring the ion count helps in the quantification. The combination...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110563
EISBN: 978-1-62708-247-1
... of MEMS devices in the marketplace recently. These technologies—wafer bonding, stacked dies, TSV (through-silicon vias), wafer-level packaging, multi-chip modules, etc.— have all helped drive down the costs of MEMS, solve major reliability problems, improve performance, and create new challenges for...