Photon emission (PE) is one of the major optical techniques for contactless isolation of functional faults in integrated circuits (ICs) in full electrical operation. This article describes the fundamental mechanisms of PE in silicon based ICs. It presents the opportunities of contactless characterization for the most important electronic device, the MOS - Field Effect Transistor, the heart of ICs and their basic digital element, the CMOS inverter. The article discusses the specification and selection of detectors for proper PE applications. The main topics are image resolution, sensitivity, and spectral range of the detectors. The article also discusses the value and application of spectral information in the PE signal. It describes state of the art IC technologies. Finally, the article discusses the applications of PE in ICs and also I/O devices, integrated bipolar transistors in BiCMOS technologies, and parasitic bipolar effects like latch up.

This article presents methods that enable one to consistently, uniformly and quickly remove substrate silicon from units without imparting damage to the structure of interest. It provides examples of electron beam probing and backside nano-probing techniques. The electron beam probing techniques are E-beam Logic State Imaging, Electron-beam Signal Image Mapping, and E-beam Device Perturbation. Backside nano-probing techniques discussed include: Electron Beam Absorbed Current, Electron Beam Induced Resistance Change, four terminal resistance measurements, resistive gate defect identification, and circuit editing. The article also presents methods to prepare electron beam probing samples where some remaining silicon is required for the transistor functions and transmission electron microscope samples from units where the substrate silicon has been partially or completely removed.

Circuit edit has been instrumental to the development of focused ion beam (FIB) systems. FIB tools for advanced circuit edit play a major role in the validation of design and manufacture. This chapter begins with an overview of value, role, and unique capabilities of FIB circuit edit tools for first silicon debug. The etching capabilities of circuit edit FIB tools are then discussed, providing information on chemistry assisted etching in silicon oxides and low-k dielectrics. The chapter also discusses the requirements and procedures involved in edit operation: high aspect ratio milling, endpointing, and cutting copper. It then provides an introduction to FIB metal/conductor deposition and FIB dielectric deposition. Edit design rules that can facilitate prototype production from first silicon are also provided. The chapter concludes with a discussion on future trends in circuit edit technology.

This chapter serves as a study and guide on the main phase constituents of cast aluminum-silicon alloys, alpha-Al solid solution and Si crystals. The first section focuses on the structure of Al-Si castings in the as-cast state, covering the morphology of the alpha-Al solid solution grains and the process by which they form. It describes how cooling rates, temperature gradients, and local concentrations influence the topology of the crystallization front, and how they play a role in determining the morphology and dispersion degree of the grains observed in cross sections of cast parts. It also describes the mechanism behind dendritic grain crystallization and how factors such as surface tension, capillary length, and lattice symmetry affect dendritic arm size and spacing. The section that follows examines the morphology of the silicon crystals that form in aluminum-silicon castings and its effect on properties and processing characteristics. It discusses the faceted nature of primary Si crystals and the modification techniques used to optimize their shape. It also describes the morphology of the (alpha-Al + Si) eutectic, which can be lamellar or rodlike in shape, and explains how it can be modified through temperature control or alloy additions to improve properties such as tensile strength and plasticity and reduce shrinkage.

Structurally differentiated intermetallic phases are important constituents in the microstructure of aluminum alloys, with the potential to influence properties, behaviors, and processing characteristics. These phases can form in aluminum-silicon alloys with transition metals (Fe, Mn, Ni, Cr, V, Ti) and with metals such as Mg and Cu. This chapter is a compilation of phase diagrams, microstructure images, and tables, providing information on more than 30 binary, ternary, and quaternary alloy systems associated with intermetallic phases in aluminum-silicon castings. Each section includes tabular information and data on the intermetallic phases in the aluminum corner of the equilibrium phase diagram, the characteristics of the crystal lattice of intermetallic phases, the chemical composition of the alloy intermetallic phases, and equilibrium reactions in the alloy system.

This chapter is an atlas of microstructures observed in AlSi7Mg, AlSi11, and Al21CuNiMg modified with either eutectic (strontium, sodium) or hypereutectic (phosphorus) silicon crystals. The microstructure images reveal the as-cast state of gravity castings made in sand and metal molds, before and after modification. The chapter also provides composition data and includes callouts identifying various phase constituents in the interdendritic eutectic microstructure.