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semiconductors

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Published: 01 November 2023
Fig. 1 Elements used in the fabrication of mainstream semiconductors: past, present, and future More
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Published: 01 June 1983
Figure 14.12 Energy levels of semiconductors. More
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Published: 01 June 1988
Fig. 11.17 Induction heating techniques used in processing of semiconductors. From J. Davies and P. Simpson, Induction Heating Handbook , McGraw-Hill, Ltd., London, 1979 ( Ref 1 ) More
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110067
EISBN: 978-1-62708-247-1
... signature analysis and GHz-SAM. GHz -SAM integrated circuit inspection scanning acoustic microscope semiconductor packages spectral signature analysis Introduction The Scanning Acoustic Microscope (SAM) has been adopted by assembly and test facilities, packaging researchers and integrated...
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Published: 01 November 2019
Figure 1 Photograph showing the Fairchild Semiconductor quad, two-input NAND integrated circuit (photo courtesy Fairchild Semiconductor). More
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Published: 01 November 2019
Figure 4 Free-carrier absorption (n-doped semiconductor). More
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Published: 01 November 2019
Figure 2 Conceptual semiconductor product flow with FIB assistance. [5] More
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Published: 01 November 2019
Figure 1 A die level image (National Semiconductor – NS16032) [4] More
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Published: 01 November 2019
Figure 3 An example of a cross-section of semiconductor device with four-Al-layer process. Metal 1, Metal 2 and Metal 3 consist of ARC, Al and cladding layers while Metal 4 consists only Al layer. (Image courtesy of ON Semiconductor) More
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Published: 01 November 2019
Figure 13 Locally induced capacitance variation in a p-doped semiconductor substrate; a) a negative biased tip causes holes (+) to accumulate at the substrate-dielectric interface. Consequently, the plate separation distance “d” is at a minimum value (d acc ) and the local capacitance More
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Published: 01 November 2019
Figure 14 C-V relationship for a n-type semiconductor (Image courtesy of Digital Instruments) More
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Published: 01 November 2019
Figure 1 Trend overview for semiconductor packaging integration on board and system level. [2] More
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Published: 01 August 2013
Fig. 4.6 Band structure of an intrinsic semiconductor. A few electrons are thermally promoted from the valence band to the conduction band. Source: Ref 4.1 . More
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Published: 01 August 2013
Fig. 4.10 The temperature dependence of conductivity in an extrinsic semiconductor. At very low temperatures, conductivity depends on thermal excitation of donor or acceptor levels. Near room temperature, there is saturation. At high temperatures, intrinsic conduction prevails. Source: Ref More
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Published: 01 August 2013
Fig. 4.12 Structure of a III-V semiconductor. Source: Ref 4.1 . More
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Published: 01 April 2004
Fig. 1.2 An electronic module in which the semiconductor dies have been interconnected using fine wire attached by thermocompression bonding More
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Published: 01 April 2004
Fig. 2.18 Cumulative failure data for TO-220 silicon semiconductor die, subject to power cycling. Joints were fabricated using preforms prepared using conventional casting (dark bars in chart) and mechanical working or rapid solidification technology (white bars on chart). Adapted from More
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Published: 01 April 2004
Fig. 5.7 Schematic illustration of a silicon semiconductor device prepared for flip-chip bonding. A hole has been cut through the passivation layer, and the three-layer underbump metal applied. The foundation metal, M1, is followed by a barrier metal. The interconnect metal has been deposited More
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Published: 01 April 2004
Fig. 5.11 (a) Semiconductor component of a pixelated imaging device. (b) Close-up view of a single solder ball. The imaging device utilizes a 16 by 128 array of 33 μm (1.3 mil) diameter solder bumps for the interconnects. Each pixel is connected to its own amplifier and processing circuitry More
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Published: 01 June 1988
Fig. 11.18 Induction systems for epitaxial deposition and CVD coating of semiconductors. From S. Berkman, V. S. Ban, and N. Goldsmith, Heteroepitaxial Semiconductors for Electronic Devices , G. W. Cullen and C. C. Wang, eds., Springer-Verlag, New York, 1978, p 264 ( Ref 2 ) More