Cross-sectioning is a technique used for process development and reverse engineering. This article introduces novice analysts to the methods of cross-sectioning semiconductor devices and provides a refresher for the more experienced analysts. Topics covered include encapsulated (potted) device sectioning techniques, non-encapsulated device techniques, utilization of the focused ion beam (FIB) making a cross-section and/or enhancing a physically polished one. Delineation methods for revealing structures are also discussed. These can be chemical etchants, chemo-mechanical polishing, and ion milling, either in the FIB or in a dedicated ion mill.

Cross-sectioning refers to the process of exposing the internal layers and printed devices below the surface by cleaving through the wafer. This article discusses in detail the steps involved in common cross-sectioning methods. These include sample preparation, scribing, indenting, and cleaving. The article also provides information on options for mounting, handling, and cleaning of samples during and after the cleaving process. The general procedures, tools required, and considerations that need to be taken into account to perform these techniques are considered.