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Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110391
EISBN: 978-1-62708-247-1
... Abstract Cross-sectioning is a technique used for process development and reverse engineering. This article introduces novice analysts to the methods of cross-sectioning semiconductor devices and provides a refresher for the more experienced analysts. Topics covered include encapsulated (potted...
Abstract
Cross-sectioning is a technique used for process development and reverse engineering. This article introduces novice analysts to the methods of cross-sectioning semiconductor devices and provides a refresher for the more experienced analysts. Topics covered include encapsulated (potted) device sectioning techniques, non-encapsulated device techniques, utilization of the focused ion beam (FIB) making a cross-section and/or enhancing a physically polished one. Delineation methods for revealing structures are also discussed. These can be chemical etchants, chemo-mechanical polishing, and ion milling, either in the FIB or in a dedicated ion mill.
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110402
EISBN: 978-1-62708-247-1
... Abstract Cross-sectioning refers to the process of exposing the internal layers and printed devices below the surface by cleaving through the wafer. This article discusses in detail the steps involved in common cross-sectioning methods. These include sample preparation, scribing, indenting...
Abstract
Cross-sectioning refers to the process of exposing the internal layers and printed devices below the surface by cleaving through the wafer. This article discusses in detail the steps involved in common cross-sectioning methods. These include sample preparation, scribing, indenting, and cleaving. The article also provides information on options for mounting, handling, and cleaning of samples during and after the cleaving process. The general procedures, tools required, and considerations that need to be taken into account to perform these techniques are considered.
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in Cross-Sectioning: Mechanical Polishing, Ion Milling, and Focused Ion Beam (FIB)
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Fig. 3 One type of sample sectioning block assembled and on grinding wheel. Upper image is actual block, lower image is a cartoon of the block showing components
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in Cross-Sectioning: Mechanical Polishing, Ion Milling, and Focused Ion Beam (FIB)
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Fig. 11 Modified sectioning block for large samples. Top is the cartoon showing the components. Bottom shows the actual block with sample.
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in DRAM Failure Analysis and Defect Localization Techniques[1]
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 7 Failure site after cross sectioning by FIB again inspected by SEM [4] .
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in Failure Analysis and Reliability of Optoelectronic Devices[1]
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Fig 14 Drawing of oxide VCSEL prepared by FIB for cross-sectioning (top) or plan-view imaging (bottom). Plan view image shows DLD network originating from the etch hole and traveling into emitting area.
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Published: 01 November 2019
Figure 4 X-ray CT analysis shows the virtual sectioning of a hermetically sealed Polymer Ta-CAP from three different directions.
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