Search Results for polishing

Rough grinding and polishing of mounted specimens are required to prepare the composite sample for optical analysis. This chapter describes these techniques for preparing composite materials. First, it provides information on grinding and polishing equipment and describes the processes and process variables for sample preparation. Then, the chapter discusses the processes of abrasive sizing for grinding and rough polishing. Next, it provides a summary of grinding methods, rough polishing, and final polishing. Finally, information on common polishing artifacts that can result from any of the steps is provided.

The most common methods for preparing polymeric composites for microscopic analysis can be used for most fiber-reinforced composite materials. There are, however, a few composite materials that require special preparation techniques. This chapter discusses the processes involved in the preparation of titanium honeycomb composites, boron fiber composites, titanium/polymeric composite hybrids, and uncured prepreg materials.

This appendix contains recipes of the electrolytic solutions in which various metals are polished in preparation for metallographic examination.

This appendix lists attack-polishing solutions and procedures used in metallographic sample preparation.

This appendix lists chemical polishing solutions and procedures used in metallographic sample preparation.

This appendix provides detailed information on the processes and procedures used in electrolytic polishing. It lists important process parameters, including time, temperature, voltage, and current density, as well as the recipes of electrolytic solutions used. The information is presented in tabular form, corresponding to specific metals and their alloys.

With semiconductor device dimension continuously scaling down and increasing complexity in integrated circuits, delayering techniques for reverse engineering is becoming increasingly challenging. The primary goal of delayering in semiconductor failure analysis is to successfully remove layers of material in order to locate and identify the area of interest. Several of the top-down delayering techniques include wet chemical etching, dry reactive ion etching, top-down parallel lapping (including chemical-mechanical polishing), ion beam milling and laser delayering techniques. This article discusses the general procedure, types, advantages, and disadvantages of each of these techniques. In this article, two types of different semiconductor die level backend of line technologies are presented: aluminum metallization and copper metallization.

Cross-sectioning is a technique used for process development and reverse engineering. This article introduces novice analysts to the methods of cross-sectioning semiconductor devices and provides a refresher for the more experienced analysts. Topics covered include encapsulated (potted) device sectioning techniques, non-encapsulated device techniques, utilization of the focused ion beam (FIB) making a cross-section and/or enhancing a physically polished one. Delineation methods for revealing structures are also discussed. These can be chemical etchants, chemo-mechanical polishing, and ion milling, either in the FIB or in a dedicated ion mill.