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planar defects

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Series: ASM Technical Books
Publisher: ASM International
Published: 01 June 2008
DOI: 10.31399/asm.tb.emea.t52240017
EISBN: 978-1-62708-251-8
... an important role in processes such as deformation, annealing, precipitation, diffusion, and sintering. All defects and imperfections can be conveniently classified under four main divisions: point defects, line defects, planar defects, and volume defects. This chapter provides a detailed discussion...
Series: ASM Technical Books
Publisher: ASM International
Published: 31 December 2020
DOI: 10.31399/asm.tb.phtbp.t59310001
EISBN: 978-1-62708-326-3
...-packed, and body-centered cubic. It then describes the four main divisions of crystal defects, namely point defects, line defects, planar defects, and volume defects. The chapter provides information on grain boundaries of metals, processes involved in atomic diffusion, and key properties of a solid...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 October 2021
DOI: 10.31399/asm.tb.ciktmse.t56020001
EISBN: 978-1-62708-389-8
... maximum solubility. It then describes different types of structural imperfections, including point, line, and planar defects, and how they respond to applied stresses and strains. The chapter makes extensive use of graphics to illustrate crystal lattice structures and related concepts such as vacancies...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 March 2012
DOI: 10.31399/asm.tb.pdub.t53420363
EISBN: 978-1-62708-310-2
..., crystalline imperfections, and the formation of surface or planar defects. It also discusses the use of X-ray diffraction for determining crystal structure. crystalline structures line defects metallic structure planar defects plastic deformation point defects volume defects X-ray diffraction...
Image
Published: 01 November 2019
Figure 12 A diffraction contrast (planar) TEM image of a dislocation in the silicon substrate. All device layers have been milled away. The contrast from such defect is a result of disruption of crystallographic planes of single crystal silicon, in the vicinity the defect. More
Image
Published: 01 November 2019
Figure 36 3D XRM can provide additional details about the defect, such as shape, dimensions and thickness, The 3D reconstruction shows a planar view of the defect, total length of ≈ 180 µm by ≈ 45 µm (≈ 5 µm at the narrowest point). This view also reveals the relative position of the ROI More
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110461
EISBN: 978-1-62708-247-1
... isolated circuit elements and so on. The choice between cross-section and planar TEM approach is made based on electrical signatures of the failures. In advanced technologies, the planar TEM analysis is often used to precisely locate the defect. The cross-section TEM is then performed to gain a three...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110285
EISBN: 978-1-62708-247-1
... on the surface of the die Focused Ion Beam (FIB) deposited tungsten microprobe pads on which to land microprobe needles. Microprobing was required in the failure analysis of defective semiconductor devices to access specific functional nodes in the device to track down and localize the point of functional signal...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 August 2005
DOI: 10.31399/asm.tb.mmfi.t69540357
EISBN: 978-1-62708-309-6
... defects (dislocations), crystal lattices may include internal surface imperfections such as twins and stacking faults. Like dislocations, surface (planar) imperfections of a crystal lattice occur in conjunction with the plastic deformation of metals, as briefly described in sections A1.3 and A1.4...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 October 2021
DOI: 10.31399/asm.tb.ciktmse.9781627083898
EISBN: 978-1-62708-389-8
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110379
EISBN: 978-1-62708-247-1
... on the layer of interest. [7] Method 2: Top-Down Delayering With Planar Slicing FIB The top down planar slice and view technique helps 1) alleviate the delayering difficulty, 2) enable to provide a better planar view for defect inspection, and 3) could prevent the over polishing of sample. [8...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 June 2022
DOI: 10.31399/asm.tb.tstap.t56040055
EISBN: 978-1-62708-428-4
... general steps as those of wrought material, that is, sectioning, mounting, planar grinding, polishing, microscopy, and analysis. An exception is that chemical etching of the TSC is not typically done prior to microscopy. As described in other sources, the magnitude and direction of forces during...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 July 1997
DOI: 10.31399/asm.tb.wip.t65930085
EISBN: 978-1-62708-359-1
..., and much subjective interpretation is necessary. Any discussion of NDE requires a clear definition of the term “defect.” A defect is a discontinuity that creates a substantial risk of failure in a component or structure during its service life. Although the aim of NDE is to detect defects, it provides...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2010
DOI: 10.31399/asm.tb.scm.t52870333
EISBN: 978-1-62708-314-0
.... 12.8 ) and planar voids if the defect densities are similar. In addition, other defects, such as ply wrinkling, can often appear to be porosity. Fig. 12.6 Ultrasonic C-scans of composite laminates Fig. 12.7 Relationship between attenuation and display Fig. 12.8 Ultrasonic...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 October 2011
DOI: 10.31399/asm.tb.mnm2.t53060013
EISBN: 978-1-62708-261-7
... positive and negative ways. They can play an important role in processes such as mechanical deformation, annealing, precipitation, diffusion, and sintering. And these defects and imperfections can be conveniently classified under four main divisions: point defects, line defects, planar defects, and volume...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 June 1983
DOI: 10.31399/asm.tb.mlt.t62860295
EISBN: 978-1-62708-348-5
... martensite in Fe–28 at.% Ni alloy. Figure 9.28 Angle martensite in Fe–29 wt.% Ni alloy, forming in association with plate martensite. Figure 9.29 Long martensite needles revealing fine striations representing internal twinning in Fe–29 wt.% Ni alloy. In (b) three different planar traces...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 July 1997
DOI: 10.31399/asm.tb.wip.t65930057
EISBN: 978-1-62708-359-1
.... A discontinuity constituting a danger to the fitness-for-service of a weld is a defect. By definition, a defect is a condition that must be removed or corrected ( Ref 1 ). The word “defect” should therefore be carefully used, because it implies that a weld is defective and requires corrective measures...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 March 2012
DOI: 10.31399/asm.tb.pdub.t53420429
EISBN: 978-1-62708-310-2
... Abstract The solidification process has a major influence on the microstructure and mechanical properties of metal casting as well as wrought products. This appendix covers the fundamentals of solidification. It discusses the formation of solidification structures, the characteristics of planar...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110067
EISBN: 978-1-62708-247-1
... circuit (IC) failure analysis labs because it provides nondestructive imaging of defects and moisture/thermal-induced damage, such as package cracks and delaminations. The SAM is an important tool for development of improved molded and flip chip packages. It aids in the evaluation of assembly processes...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 June 1983
DOI: 10.31399/asm.tb.mlt.t62860133
EISBN: 978-1-62708-348-5
...    grain boundary T −3    stacking fault T −1    electrons a T −2 to T −1    dislocation T −2    point defect T, T 3/2    phonon b T −3 e −( θ l / αT ) Electron–    phonon T −2    defect T −1 High Temperatures Phonon...