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planar MOS device

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Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110279
EISBN: 978-1-62708-247-1
... technology from design to manufacturing and the characterization methods are discussed. The focus is on two prominent MOS structures: planar MOS device and FinFET device. The article covers the device parameters and device properties that determine the design criteria and the device tuning procedures. The...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110351
EISBN: 978-1-62708-247-1
... delay is often accomplished through depositing a FIB metal over silicon (MOS) capacitor and attaching it the critical signal line or trimming transistor gates from a multi-leg device. Both of these methods are attractive because they can be duplicated as a mask reticle engineering change order (ECO...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 July 2009
DOI: 10.31399/asm.tb.bcp.t52230361
EISBN: 978-1-62708-298-3
...: planar diode sputtering, triode sputtering, pulse sputtering, radio-frequency sputtering, and magnetically assisted sputtering (magnetron sputtering). The following gives a brief description of each method. Ion plating uses concurrent or periodic energetic bombardment of the depositing...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2015
DOI: 10.31399/asm.tb.cpi2.t55030096
EISBN: 978-1-62708-282-2
... surface of the sample. The grain structure is visible due to the attack, and some grains have fallen out (grain dropping). The cross-sectional view ( Fig. 3b) shows the depth of penetration of the attack along the grain boundaries. Fig. 3 Planar (a) and cross-sectional (b) views of intergranular...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 1984
DOI: 10.31399/asm.tb.mpp.9781627082600
EISBN: 978-1-62708-260-0
Series: ASM Technical Books
Publisher: ASM International
Published: 01 September 2008
DOI: 10.31399/asm.tb.fahtsc.t51130503
EISBN: 978-1-62708-284-6
... needed for HAC by microvoid coalescence is reduced in the presence of hydrogen. Beachem’s model unifies several theories but shows how the stress-sorption and lattice embrittlement models are unnecessary. The model shows that the planar pressure effects are necessary at low stress intensities and are...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 January 2000
DOI: 10.31399/asm.tb.cub.t66910363
EISBN: 978-1-62708-250-1
... hardware, plumbing fittings, electrical contacts, plastic items, and magnetic memory devices. The ability to be both decorative and protective to substrates distinguishes electrodeposited coatings from metallic coatings applied by hot dipping or thermal spraying. Metallic luster, achieved by bright...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2003
DOI: 10.31399/asm.tb.cfap.t69780089
EISBN: 978-1-62708-281-5
... plate electrodes. Because the spacing between the electrodes can change during cure because of resin shrinkage or application of pressure, planar interdigitized printed circuit probe designs with integral temperature-monitoring devices were developed ( Ref 163 , 164 ). This miniature probe allows...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 March 2002
DOI: 10.31399/asm.tb.mgppis.9781627082587
EISBN: 978-1-62708-258-7
Series: ASM Technical Books
Publisher: ASM International
Published: 01 March 2002
DOI: 10.31399/asm.tb.stg2.t61280211
EISBN: 978-1-62708-267-9
... 1900 °F (980 to 1040 °C) if the alloy has a sufficiently high molybdenum + tungsten content (Mo + ½W ≥ 6 wt%). In some instances, the formation of M 6 C is as intragranular Widmanstätten precipitates, in others as a blocky carbide particle. Matrix carbides generally contribute very small increments of...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 September 2011
DOI: 10.31399/asm.tb.cfw.9781627083386
EISBN: 978-1-62708-338-6