Search Results for optical emission spectroscopy

This chapter describes some of the most effective tools for investigating boiler tube failures, including scanning electron microscopy, optical emission spectroscopy, atomic absorption spectroscopy, x-ray fluorescence spectroscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. It explains how the tools work and what they reveal. It also covers the topic of image analysis and its application in the measurement of grain size, phase/volume fraction, delta ferrite and retained austenite, inclusion rating, depth of carburization/decarburization, scale thickness, pearlite banding, microhardness, and hardness profiles. The chapter concludes with a brief discussion on the effect of scaling and deposition and how to measure it.

The overall chemical composition of metals and alloys is most commonly determined by x-ray fluorescence (XRF) and optical emission spectroscopy (OES). High-temperature combustion and inert gas fusion methods are typically used to analyze dissolved gases (oxygen, nitrogen, and hydrogen) and, in some cases, carbon and sulfur in metals. This chapter discusses the operating principles of XRF, OES, combustion and inert gas fusion analysis, surface analysis, and scanning auger microprobe analysis. The details of equipment set-up used for chemical composition analysis as well as the capabilities of related techniques of these methods are also covered.

Photon emission (PE) is one of the major optical techniques for contactless isolation of functional faults in integrated circuits (ICs) in full electrical operation. This article describes the fundamental mechanisms of PE in silicon based ICs. It presents the opportunities of contactless characterization for the most important electronic device, the MOS - Field Effect Transistor, the heart of ICs and their basic digital element, the CMOS inverter. The article discusses the specification and selection of detectors for proper PE applications. The main topics are image resolution, sensitivity, and spectral range of the detectors. The article also discusses the value and application of spectral information in the PE signal. It describes state of the art IC technologies. Finally, the article discusses the applications of PE in ICs and also I/O devices, integrated bipolar transistors in BiCMOS technologies, and parasitic bipolar effects like latch up.

Temperature is a critical process parameter in the heat treatment and forging of steel and must be accurately measured to properly control it. This appendix discusses the operating principles of thermocouples and infrared pyrometers, describing the various types as well as advantages and applications.

This article covers common techniques for surface characterization, including the modern scanning electron microscopy and methods for the chemical characterization of surfaces by Auger electron spectroscopy, X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry. The principles of surface analysis and some of the applications of the technique in polymer failure studies are also provided.

This chapter discusses the techniques applicable to the diagnosis of corrosion failures, including visual and microscopic examination of corroded surfaces and microstructure; chemical analysis of the metal, corrosion products, and bulk environment; nondestructive evaluation methods; corrosion testing techniques; and mechanical testing techniques. A guide to investigative techniques used in corrosion failure analysis is provided in a table, describing the advantages and limitations of each technique. The principal stages of the investigation and analysis of corrosion failures discussed in the chapter are: collection of background information and sampling; preliminary laboratory examination; detailed metallographic and fractographic examinations; chemical analysis of corrosion products and bulk materials; corrosion testing for quality control; mechanical testing for quality control; and analysis of results and report writing.

Boiler tubes operating at high temperatures under significant pressure are vulnerable to stress rupture failures. This chapter examines the cause, effect, and appearance of such failures. It discusses the conditions and mechanisms that either lead to or are associated with stress rupture, including overheating, high-temperature creep, graphitization, and dissimilar metal welds. It explains how to determine which mechanisms are in play by interpreting fracture patterns and microstructural details. It also describes the investigation of several carbon and low-alloy steel tubes that failed due to stress rupture.

This chapter discusses the various failure analysis techniques for microelectromechanical systems (MEMS), focusing on conventional semiconductor manufacturing processes and materials. The discussion begins with a section describing the advances in integration and packaging technologies that have helped drive the further proliferation of MEMS devices in the marketplace. It then shows some examples of the top MEMS applications and quickly discusses the fundamentals of their workings. The next section describes common failure mechanisms along with techniques and challenges in identifying them. The chapter also provides information on the testing of MEMS devices. It covers the two common challenges in sample preparation for MEMS: decapping, or opening up the package, without disturbing the MEMS elements; and removing MEMS elements for analysis. Finally, the chapter discusses the aspects of failure analysis techniques that are of particular interest to MEMS.

As semiconductor feature sizes have shrunk, the technology needed to encapsulate modern integrated circuits has expanded. Due to the various industry changes, package failure analyses are becoming much more challenging; a systematic approach is therefore critical. This article proposes a package failure analysis flow for analyzing open and short failures. The flow begins with a review of data on how the device failed and how it was processed. Next, non-destructive techniques are performed to document the condition of the as-received units. The techniques discussed are external optical inspection, X-ray inspection, scanning acoustic microscopy, infrared (IR) microscopy, and electrical verification. The article discusses various fault isolation techniques to tackle the wide array of failure signatures, namely IR lock-in thermography, magnetic current imaging, time domain reflectometry, and electro-optical terahertz pulse reflectometry. The final step is the step-by-step inspection and deprocessing stage that begins once the defect has been imaged.

This chapter elucidates the indispensable role of characterization in the development of cold-sprayed coatings and illustrates some of the common processes used during coatings development. Emphasis is placed on the advanced microstructural characterization techniques that are used in high-pressure cold spray coating characterization, including residual-stress characterization. The chapter includes some preliminary screening of tool hardness and bond adhesion strength, as well as a distinction between surface and bulk characterization techniques and their importance for cold spray coatings. The techniques covered are optical microscopy, X-Ray diffraction, scanning electron microscopy, focused ion beam machining, electron probe microanalysis, transmission electron microscopy, and electron backscattered diffraction. The techniques also include electron channeling contrast imaging, X-Ray photoelectron spectroscopy, X-ray fluorescence, Auger electron spectroscopy, Raman spectroscopy, oxygen analysis, and nanoindentation.

Education and training play an important role if the failure analyst is to be successful in his or her work. This article discusses the history of training activities in the failure/product analysis discipline and describes where this area is heading. It provides information on three areas of education and training that should be given to the analyst for him or her to be successful developing and fielding modern semiconductor components: analysis process, technology, and technique training.

This chapter discusses the basic steps of a failure investigation. It explains that the first step is to gather and document information about the failed component and its operating history. It advises investigators to visit the failure site as soon as possible to record damages and collect test specimens for subsequent examination and chemical analysis. It also discusses the role of mechanical property testing, the use of nondestructive evaluation, and the final step of generating a report.

There are several analytical methods available that can be used in-line on whole wafers as well as off-line on de-processed products that are returned from the field. These techniques are surface analytical techniques that can be used to characterize the bulk of the material. The main six methods used in semiconductor industry are: Auger spectroscopy, dynamic secondary ion mass spectroscopy, time of flight static secondary ion mass spectroscopy (ToF-SIMS), X-ray photoelectron spectroscopy, scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDX), and transmission electron microscope-EDX. This review specifically addresses ToF-SIMS and describes some typical examples of the application of Auger and SEM-EDX.

This article provides an overview of how to use the scanning electron microscope (SEM) for imaging integrated circuits. The discussion covers the principles of operation and practical techniques of the SEM. The techniques include sample mounting, sample preparation, sputter coating, sample tilt and image composition, focus and astigmatism correction, dynamic focus and image correction, raster alignment, and adjusting brightness and contrast. The article also provides information on achieving ultra-high resolution in the SEM. It concludes with information on the general characteristics and applications of environmental SEM.

The manufacture of all aluminum wrought products begins with an ingot or a continuous strip solidified from the liquid state. During molten metal processing (MMP), aluminum undergoes a series of operations that are described in this chapter including melting and alloying, recycling, molten metal treatment, control of inclusions, ingot grain refinement, and direct chill (DC) or continuous casting.

This article introduces the wafer-level fault localization failure analysis (FA) process flow for an accelerated yield ramp-up of integrated circuits. It discusses the primary design considerations of a fault localization system with an emphasis on complex tester-based applications. The article presents examples that demonstrate the benefits of the enhanced wafer-level FA process. It also introduces the setup of the wafer-level fault localization system. The application of the wafer-level FA process on a 22 nm technology device failing memory test is studied and some common design limitations and their implications are discussed. The article presents a case study and finally introduces a different value-add application flow capitalizing on the wafer-level fault localization system.

This chapter discusses the setup and use of a transmission electron detector in a typical scanning electron microscope (SEM). It describes the arrangement and function of the primary components in the detector, following the signal path from the sample to a micromirror array where it is directed by the user to either a CMOS sensor (to record diffraction patterns) or a photomultiplier tube (to observe real-space images). The chapter discusses some of the nuances of digital imaging and diffraction and includes examples in which transmission electron detectors are used to analyze gold films, carbon nanotubes, zeolite sheets, and monolayer graphene. It also describes emerging techniques, including four-dimensional STEM, thermal diffuse scattering, energy filtering, aberration correction, and atomic resolution imaging.

This article reviews nondestructive and destructive test methods used to characterize welds. The first process of characterization discussed involves information that may be obtained by direct visual inspection and measurement of the weld. An overview of nondestructive evaluation is included that encompasses techniques used to characterize the locations and structure of internal and surface defects, including radiography, ultrasonic testing, and liquid penetrant inspection. The next group of characterization procedures discussed is destructive tests, requiring the removal of specimens from the weld. The third component of weld characterization is the measurement of mechanical and corrosion properties. Following the discussion on the characterization procedures, the second part of this article provides examples of how two particular welds were characterized according to these procedures.