This chapter examines some of the behaviors that suit materials for electrical and electronic applications. It begins by explaining how charge carriers move in metals and semiconductors and how properties such as conductivity, mobility, and resistivity are derived. It discusses the significance of energy bands, intrinsic and extrinsic conduction, and the properties of compound semiconductors. It also covers semiconductor devices, including p-n junctions, light emitting diodes, transistors, and piezoelectric crystals.

Transistors are the most important active structure of any semiconductor component. Performance characteristics of such devices within the specifications are key to ensuring proper functionality and long-term reliability of the product. In this article, a summary of the semiconductor technology from design to manufacturing and the characterization methods are discussed. The focus is on two prominent MOS structures: planar MOS device and FinFET device. The article covers the device parameters and device properties that determine the design criteria and the device tuning procedures. The discussion includes the effects of drain induced barrier lowering, velocity saturation, hot carrier degradation, and short channel on these devices.

Scanning Probe Microscope (SPM) has an increasing important role in the development of nanoscale semiconductor technologies. This article presents a detailed discussion on various SPM techniques including Atomic Force Microscopy (AFM), Scanning Kelvin Probe Microscopy, Scanning Capacitance Microscopy, Scanning Spreading Resistance Microscopy, Conductive-AFM, Magnetic Force Microscopy, Scanning Surface Photo Voltage Microscopy, and Scanning Microwave Impedance Microscopy. An overview of each SPM technique is given along with examples of how each is used in the development of novel technologies, the monitoring of manufacturing processes, and the failure analysis of nanoscale semiconductor devices.

This article addresses the ancillary issues regarding the nanoprobing and characterization of transistors, probing copper metallization layers, and the various imaging techniques. The discussion includes several characterization examples of known transistor failure types, namely four probe transistor characterization, two probe transistor characterization, and probing and characterizing metallization issues. The imaging techniques discussed are those that are specific to atomic force nanoprober or scanning electron microscope based tools. They are current contrast imaging, scanning capacitance imaging, e-beam absorbed current imaging, e-beam induced current imaging, e-beam induced resistance change imaging, and active voltage contrast imaging.

With semiconductor device dimension continuously scaling down and increasing complexity in integrated circuits, delayering techniques for reverse engineering is becoming increasingly challenging. The primary goal of delayering in semiconductor failure analysis is to successfully remove layers of material in order to locate and identify the area of interest. Several of the top-down delayering techniques include wet chemical etching, dry reactive ion etching, top-down parallel lapping (including chemical-mechanical polishing), ion beam milling and laser delayering techniques. This article discusses the general procedure, types, advantages, and disadvantages of each of these techniques. In this article, two types of different semiconductor die level backend of line technologies are presented: aluminum metallization and copper metallization.

Optoelectronic components can be readily classified as active light-emitting components (such as semiconductor lasers and light emitting diodes), electrically active but non-emitting components, and inactive components. This chapter focuses on the first category, and particularly on semiconductor lasers. The discussion begins with the basics of semiconductor lasers and the material science behind some causes of device failure. It then covers some of the common failure mechanisms, highlighting the need to identify failures as wearout or maverick failures. The chapter also covers the capabilities of many key optoelectronic failure analysis tools. The final section describes the common steps that should be followed so as to assure product reliability of optoelectronic components.

There are several analytical methods available that can be used in-line on whole wafers as well as off-line on de-processed products that are returned from the field. These techniques are surface analytical techniques that can be used to characterize the bulk of the material. The main six methods used in semiconductor industry are: Auger spectroscopy, dynamic secondary ion mass spectroscopy, time of flight static secondary ion mass spectroscopy (ToF-SIMS), X-ray photoelectron spectroscopy, scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDX), and transmission electron microscope-EDX. This review specifically addresses ToF-SIMS and describes some typical examples of the application of Auger and SEM-EDX.

This chapter describes the processes, applications, and limitations of forming and shaping various materials. It discusses bulk forming, hot working, cold working, sheet forming, and polymer and powder processing.

This chapter focuses on resistance characteristics and methods of protecting different forms of high-temperature gaseous corrosion, namely high-temperature oxidation, sulfidation, carburization, hydrogen effects, and hot corrosion.

The ultimate goal of the failure analysis process is to find physical evidence that can identify the root cause of the failure. Transmission electron microscopy (TEM) has emerged as a powerful tool to characterize subtle defects. This article discusses the sample preparation procedures based on focused ion beam milling used for TEM sample preparation. It describes the principles behind commonly used imaging modes in semiconductor failure analysis and how these operation modes can be utilized to selectively maximize signal from specific beam-specimen interactions to generate useful information about the defect. Various elemental analysis techniques, namely energy dispersive spectroscopy, electron energy loss spectroscopy, and energy-filtered TEM, are described using examples encountered in failure analysis. The origin of different image contrast mechanisms, their interpretation, and analytical techniques for composition analysis are discussed. The article also provides information on the use of off-axis electron holography technique in failure analysis.

This chapter provides a comprehensive overview over all phenomena related to Voltage Contrast (VC) mechanisms in SEM and FIB. The multiple advantages, possibilities, and limits of active and passive VC failure localization are systemized and discussed. The knowledge of all facts influencing the VC generation (capacitance, leakage, doping, and circuitry) is very helpful for successful failure localization.

Photon emission (PE) is one of the major optical techniques for contactless isolation of functional faults in integrated circuits (ICs) in full electrical operation. This article describes the fundamental mechanisms of PE in silicon based ICs. It presents the opportunities of contactless characterization for the most important electronic device, the MOS - Field Effect Transistor, the heart of ICs and their basic digital element, the CMOS inverter. The article discusses the specification and selection of detectors for proper PE applications. The main topics are image resolution, sensitivity, and spectral range of the detectors. The article also discusses the value and application of spectral information in the PE signal. It describes state of the art IC technologies. Finally, the article discusses the applications of PE in ICs and also I/O devices, integrated bipolar transistors in BiCMOS technologies, and parasitic bipolar effects like latch up.

This chapter presents the theory and practice associated with the application of thin films. The first half of the chapter describes physical deposition processes in which functional coatings are deposited on component surfaces using mechanical, electromechanical, or thermodynamic techniques. Physical vapor deposition (PVD) techniques include sputtering, e-beam evaporation, arc-PVD, and ion plating and are best suited for elements and compounds with moderate melting points or when a high-purity film is required. The remainder of the chapter covers chemical vapor deposition (CVD) processes, including atomic layer deposition, plasma-enhanced and plasma-assisted CVD, and various forms of vapor-phase epitaxy, which are commonly used for compound films or when deposit purity is less critical. A brief application overview is also presented.

Nonferrous metals are of commercial interest both as engineering materials and as alloying agents. This chapter addresses both roles, discussing the properties, processing characteristics, and applications of several categories of nonferrous metals, including light metals, corrosion-resistance alloys, superalloys, refractory metals, low-melting-point metals, reactive metals, precious metals, rare earth metals, and metalloids or semimetals. It also provides a brief summary on special-purpose materials, including uranium, vanadium, magnetic alloys, and thermocouple materials.

This chapter presents an overview of microprocessor and application specific integrated circuit (IC) testing. It begins with a description of key industry trends that will impact how ICs will be tested in the future. Next, it provides a brief description of the most common tests applied in the IC industry, where technical issues that are causing methodology changes are emphasized. These include functional testing, structural testing, scan-based delay testing, built-in self-testing, memory testing, analog circuit testing, system-on-a-chip testing, and reliability testing. Trends discussed have driven the development of novel focus areas in test and the chapter discusses several of those areas, including test data volume containment, test power containment, and novel methods of defect-based test.

Circuit edit has been instrumental to the development of focused ion beam (FIB) systems. FIB tools for advanced circuit edit play a major role in the validation of design and manufacture. This chapter begins with an overview of value, role, and unique capabilities of FIB circuit edit tools for first silicon debug. The etching capabilities of circuit edit FIB tools are then discussed, providing information on chemistry assisted etching in silicon oxides and low-k dielectrics. The chapter also discusses the requirements and procedures involved in edit operation: high aspect ratio milling, endpointing, and cutting copper. It then provides an introduction to FIB metal/conductor deposition and FIB dielectric deposition. Edit design rules that can facilitate prototype production from first silicon are also provided. The chapter concludes with a discussion on future trends in circuit edit technology.

A working knowledge of diffusion is necessary to understand and predict the behavior of metals and alloys during manufacturing and in certain types of service. This chapter covers the fundamentals of diffusion in solids and some of the applications in which diffusion plays a role. It discusses the mechanisms behind interstitial, substitutional, grain boundary, and surface diffusion, the derivation and use of Fick’s laws, and the basic principles of diffusion coating processes, including carburizing, nitriding, nitrocarburizing, cyaniding, carbonitriding, boriding, aluminizing, siliconizing, chromizing, vanadizing, and titanizing. It also discusses diffusion bonding and presents several approaches for dealing with oxide barrier problems.

Induction heating has found widespread use as a method to raise the temperature of a metal prior to forming or joining, or to change its metallurgical structure. However, induction heating has specialized capabilities that make it suitable for applications outside of metal treatment and fabrication. This chapter summarizes some of the special applications of induction heating, including those in the plastics, packaging, electronics, glass, chemical, and metal-finishing industries. The chapter concludes with a discussion of the application of induction heating for vacuum processes.