Magnetic field imaging (MFI), generally understood as mapping the magnetic field of a region or object of interest using magnetic sensors, has been used for fault isolation (FI) in microelectronic circuit failure analysis for almost two decades. Developments in 3D magnetic field analysis have proven the validity of using MFI for 3D FI and 3D current mapping. This article briefly discusses the fundamentals of the technique, paying special attention to critical capabilities like sensitivity and resolution, limitations of the standard technique, sensor requirements and, in particular, the solution to the 3D problem, along with examples of its application to real failures in devices.

As semiconductor feature sizes have shrunk, the technology needed to encapsulate modern integrated circuits has expanded. Due to the various industry changes, package failure analyses are becoming much more challenging; a systematic approach is therefore critical. This article proposes a package failure analysis flow for analyzing open and short failures. The flow begins with a review of data on how the device failed and how it was processed. Next, non-destructive techniques are performed to document the condition of the as-received units. The techniques discussed are external optical inspection, X-ray inspection, scanning acoustic microscopy, infrared (IR) microscopy, and electrical verification. The article discusses various fault isolation techniques to tackle the wide array of failure signatures, namely IR lock-in thermography, magnetic current imaging, time domain reflectometry, and electro-optical terahertz pulse reflectometry. The final step is the step-by-step inspection and deprocessing stage that begins once the defect has been imaged.

This chapter surveys both basic quality and basic reliability concepts as an introduction to the failure analysis professional. It begins with a section describing the distinction between quality and reliability and moves on to provide an overview of the concept of experiment design along with an example. The chapter then discusses the purposes of reliability engineering and introduces four basic statistical distribution functions useful in reliability engineering, namely normal, lognormal, exponential, and Weibull. It also provides information on three fundamental acceleration models used by reliability engineers: Arrhenius, Eyring, and power law models. The chapter concludes with information on failure rates and mechanisms and the two techniques for uncovering reliability issues, namely burn-in and outlier screening.

With the commercialization of heavier and lighter ion beams, adoption of focused ion beam (FIB) use for analysis of challenging regions of interest (ROI) has grown. In this chapter, the authors focus on highlighting commercially available and complementary FIB technologies and their implementation challenges and application trends.

This chapter presents the theory and practice associated with the application of thin films. The first half of the chapter describes physical deposition processes in which functional coatings are deposited on component surfaces using mechanical, electromechanical, or thermodynamic techniques. Physical vapor deposition (PVD) techniques include sputtering, e-beam evaporation, arc-PVD, and ion plating and are best suited for elements and compounds with moderate melting points or when a high-purity film is required. The remainder of the chapter covers chemical vapor deposition (CVD) processes, including atomic layer deposition, plasma-enhanced and plasma-assisted CVD, and various forms of vapor-phase epitaxy, which are commonly used for compound films or when deposit purity is less critical. A brief application overview is also presented.

Over the revolutionary era of semiconductor technology, Computer-Aided Design Navigation (CADNav) tools have played an increasingly critical role in silicon debug and failure analysis (FA) in efforts to improve manufacturing yield while reducing time-to-market for integrated circuit (IC) products. This article encompasses the key principles of CADNav for various aspects of semiconductor FA and its importance for improved yield and profitability. An overview of the required input data and formats are described for both IC and package devices, along with key considerations and best practices recommended for fast fault localization, accurate root cause analysis, FA equipment utilization, efficient cross-team collaboration, and database management. Challenges with an FA lab ecosystem are addressed by providing an integrated database and software platform that enable design layout and schematic analysis in the FA lab for quick and accurate navigation and cross-tool collaboration.

This article is a compilation of terms and definitions related to failure analysis that have been addressed in the proceedings of the International Symposium for Testing and Failure Analysis.

The orientation of the devices within a package determine the best chosen approach for access to a select component embedded in epoxy both in package or System in Package and multi-chip module (MCM). This article assists the analyst in making decisions on frontside access using flat lapping, chemical decapsulation, laser ablation, plasma reactive ion etching (RIE), CNC based milling and polishing, or a combination of these coupled with optical or electrical endpoint means. This article discusses the general characteristics, advantages, and disadvantages of each of these techniques. It also presents a case study illustrating the application of CNC milling to isolate MCM leakage failure.

Alloying, heat treating, and work hardening are widely used to control material properties, and though they take different approaches, they all focus on imperfections of one type or other. This chapter provides readers with essential background on these material imperfections and their relevance in design and manufacturing. It begins with a review of compositional impurities, the physical arrangement of atoms in solid solution, and the factors that determine maximum solubility. It then describes different types of structural imperfections, including point, line, and planar defects, and how they respond to applied stresses and strains. The chapter makes extensive use of graphics to illustrate crystal lattice structures and related concepts such as vacancies and interstitial sites, ion migration, volume expansion, antisite defects, edge and screw dislocations, slip planes, twinning planes, and dislocation passage through precipitates. It also points out important structure-property correlations.