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metal-oxide semiconductor field-effect transistors

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Series: ASM Technical Books
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.tb.ems.t53730037
EISBN: 978-1-62708-283-9
... . The other type of transistor is the metal oxide semiconductor field effect transistor (MOSFET) sketched in Fig. 4.15 . The gate, made from polycrystalline silicon, is separated from the channel by a layer of SiO 2 . A small signal voltage between the source and gate creates an electric field...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110180
EISBN: 978-1-62708-247-1
... Spectra of an N-channel Metal-Oxide Semiconductor Field Effect Transistor and Breakdown, ” Appl. Phys. Lett. , vol. 56 , no. 12 , pp. 1152 – 1153 , Mar . 1990 . 10.1063/1.102547 • Toriumi A. , et al. , “ A study of photo emission from n-channel MOSFETs, ” IEEE Trans. on Electron Dev...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110279
EISBN: 978-1-62708-247-1
... of charge carriers tends to saturate as shown in figure 5 . In other words, above a critical electric field, the velocity of carriers stabilizes and cannot move faster. This phenomenon is seen in short channel transistors that experience higher electric fields [1] . Figure 5 Effect of electric...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110244
EISBN: 978-1-62708-247-1
.... 249 ( 2008 ) [13] Kolachina S. “ Introduction to Laser Voltage Probing (LVP) of Integrated Circuits ,” Microelectronics Failure Analysis Desk Reference , 6th ed. , ASM International ( 2011 ) [14] Keldysh L. V. , “ The effect of a strong electric field on the optical...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110351
EISBN: 978-1-62708-247-1
.... 129 - 134 10.1002/sca.20268 [94] Tan S , Livengood R. H. , Shima D. , Notte J. , and McVey S. , “ Gas field ion source and liquid metal ion source charged particle material interaction study for semiconductor nanomachining applications ,” J. Vac. Sci Technol B , 28...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110461
EISBN: 978-1-62708-247-1
..., with respect to the incident electron beam. No crystalline diffraction effects are noted within silicon-oxide and silicon-nitride because they are amorphous. Such amorphous layers display contrast based on the average atomic weight, density, and sample thickness. Unique grain(s) in a PMOS transistor...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110285
EISBN: 978-1-62708-247-1
... Threshold Voltage (Vt) Shift Characterization Sub-100nm semiconductor technology nodes have multiple layers of metallization and insulative oxide that reside over the transistors. This metallization layers route power, ground, and functional signals between transistor circuits and to individual...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110196
EISBN: 978-1-62708-247-1
... the local thermal effects on metallic lines, junctions, and complete devices. The article also provides a description and case study examples of multiple photocurrent and thermal injection techniques. The photocurrent examples are based on Optical Beam-Induced Current and Light-Induced Voltage Alteration...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110652
EISBN: 978-1-62708-247-1
... visible discoloration (color photo required) on the transistor metal lines. Figure 24 is an optical microscope picture which is less that 1000× magnification and shows a field return where the EOS damage are in the transistors and at the die surface. Discoloration is obvious (color photo...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 June 1988
DOI: 10.31399/asm.tb.eihdca.t65220047
EISBN: 978-1-62708-341-6
... in the radio-frequency range is also now available ( Fig. 4.29 ). Systems in use operate at 50 to 450 kHz and a wide range of power outputs. Unlike the inverters used at 50 kHz and below, these units do not have SCR’s, but are instead powered by MOSFET (Metal Oxide Semiconductor Field Effect Transistor) output...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110673
EISBN: 978-1-62708-247-1
... 1960’s, we have a bewildering array of technologies, such as complementary metal oxide semiconductor (CMOS) circuits, BiCMOS circuits, gallium arsenide circuits, indium phosphide circuits, silicon carbide transistors, gallium nitride diodes, complex heterojunction structures, and microelectromechanical...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110485
EISBN: 978-1-62708-247-1
... proximal magnetic field. It has been shown to be effective in analyzing magnetic thin films [18] and current carrying conductors [19 , 20] . The sensing element is typically a silicon AFM probe which has been coated with a ferromagnetic film, e.g., Co-Cr. Prior to use, the probe tip is magnetized...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110269
EISBN: 978-1-62708-247-1
... in FIB PVC in SEM versus FIB Active Voltage Contrast (AVC) Summary References References [1] Colvin J. , “ A New Technique to Rapidly Identify Low Level Gate Oxide Leakage in Field Effect Semiconductors Using a Scanning Electron Microscope ”, Proc. 16th Int. Symp. Testing...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110379
EISBN: 978-1-62708-247-1
...), Argon (Ar) milling is effective complementary method of delayering. It provides a lower sample removal rate, but the advantage is with respect to the size of the field. [11] BIB, Ar milling allows accurate targeting of specific layers for failure analysis and this solution offers huge exposure area...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110613
EISBN: 978-1-62708-247-1
... regions of interconnect metal are called mousebites [1] . They can be due to particle defects, electromigration, or stress voids. Mousebites have a minor electrical effect, but are a major reliability risk [15] . Figure 20 (top) sketches a defect-free and a defective (mousebite) section...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 October 2011
DOI: 10.31399/asm.tb.mnm2.t53060315
EISBN: 978-1-62708-261-7
... of their properties. Many nonferrous elements do double duty as important alloying agents for both steels and nonferrous metals. For example, virtually all steels contain small amounts of manganese , which is used mainly to control (and in some cases counteract) the undesirable effects of sulfur and to aid...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110335
EISBN: 978-1-62708-247-1
..., Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35 , no. 3 ( 2017 ): 030802 . 10.1116/1.4981016 [7] Tan Shida , Livengood Richard , Shima Darryl , Notte John , and McVey Shawn . “ Gas Field Ion Source and Liquid Metal Ion Source Charged...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110042
EISBN: 978-1-62708-247-1
... the field appears dark and areas of interest appear brightly contrasted. The contrast effects are quite different and a feature can appear quite different by each method. A very rough surface may appear dark in brightfield illumination, since it reflects light away from the collecting NA of the objective...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110323
EISBN: 978-1-62708-247-1
... approach for removing substrate silicon. Field emission liquid metal ion source (FE-LMIS) FIB systems have been readily available for decades. The metal used in these sources is gallium. More recently xenon PFIB systems have become available. Both systems have advantages and disadvantages. Gallium...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110402
EISBN: 978-1-62708-247-1
..., it will usually be the first step. The materials present and feature sizes of interest, as well as customer considerations, will generally dictate the methods of sample preparation to be used prior to failure analysis. Dielectric and non-metallic materials such as oxides and nitrides typically cleave easily...