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metal-oxide semiconductor field-effect transistors

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Series: ASM Technical Books
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.tb.ems.t53730037
EISBN: 978-1-62708-283-9
... across the collector is high, the output signal is at high voltage. Source: Ref 4.1 . The other type of transistor is the metal oxide semiconductor field effect transistor (MOSFET) sketched in Fig. 4.15 . The gate, made from polycrystalline silicon, is separated from the channel by a layer...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110279
EISBN: 978-1-62708-247-1
.... The discussion includes the effects of drain induced barrier lowering, velocity saturation, hot carrier degradation, and short channel on these devices. design criteria device tuning FinFET device performance characteristics planar MOS device transistors Semiconductor technology has advanced...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2023
DOI: 10.31399/asm.tb.edfatr.t56090155
EISBN: 978-1-62708-462-8
... of nanosheet gate-all-around (GAA) and expected complementary field-effect transistors (FETs) with nMOS and pMOS stacked on top of each other. Fig. 2 Transistor pathways. (a) Source: 2019 IEEE International Electron Devices Meeting (IEDM) . (b) Source: Applied Materials Analysis Volume Concept...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110180
EISBN: 978-1-62708-247-1
... effects. FET Function A MOS Field Effect Transistor (FET) modulates conductivity in a semiconductor interface to a capacitive dielectric and gate electrode. The source (S) and drain (D) of the load circuit are built as pn junctions next to the capacitative structure, both are zero or negatively...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110285
EISBN: 978-1-62708-247-1
... resistance change imaging nanoprobe scanning capacitance imaging transistors Introduction In the late 1990s to early 2000’s, the semiconductor industry was in the process of transitioning from aluminum metallization and Boron Phosphorus Silicon Glass (BPSG) inter-level dielectric (ILD) backend...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.tb.ems.9781627082839
EISBN: 978-1-62708-283-9
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2023
DOI: 10.31399/asm.tb.edfatr.t56090109
EISBN: 978-1-62708-462-8
... edits, and scanning probe microscopy. The upcoming changes in future semiconductor technology bring many exciting new features, such as continuous device scaling, heterogeneous integration, new transistor architecture such as gate-all-around field-effect transistor (GAAFET), and backside power...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110613
EISBN: 978-1-62708-247-1
...] . Ultrathin oxides in the 15 – 25 Å range show a soft breakdown in addition to the hard breakdowns of thicker transistor oxides. Soft breakdown in these ultrathin oxides is an irreversible damage to the oxide whose most significant effect is the increase in noise of the gate voltage. I DDQ is not elevated...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110652
EISBN: 978-1-62708-247-1
... and discolored metallization ( Fig. 23 ). Figure 23 Simulated EOS damages with clearly visible discoloration (color photo required) on the transistor metal lines. Figure 24 is an optical microscope picture which is less that 1000× magnification and shows a field return where the EOS damage...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110351
EISBN: 978-1-62708-247-1
... node backside circuit modification at the transistor device level is shown in Figure 26 . It shows a layout example of a complementary metal oxide semiconductor (CMOS) inverter outlined in black. The active area of the transistor diffusion is light blue, the polysilicon gate drawn in red...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2023
DOI: 10.31399/asm.tb.edfatr.t56090091
EISBN: 978-1-62708-462-8
.... 14 Transistor threshold voltage shift caused by oxide charging from x-ray dosing, illustrating the effect of fixed oxide trapped charge on n-and p-MOS devices. Copyright 2006 IEEE ( Ref 21 ) Fig. 15 Transistor threshold voltage shift resulting from x-ray dosing in a 5 nm process IC...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110673
EISBN: 978-1-62708-247-1
... logic circuits like the quad, two-input NAND gate, we also have integrated circuits that exceed 1 billion gates. In addition to the bipolar silicon circuits of the late 1960’s, we have a bewildering array of technologies, such as complementary metal oxide semiconductor (CMOS) circuits, BiCMOS circuits...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110196
EISBN: 978-1-62708-247-1
... thermal effects on metallic lines, junctions, and complete devices. The article also provides a description and case study examples of multiple photocurrent and thermal injection techniques. The photocurrent examples are based on Optical Beam-Induced Current and Light-Induced Voltage Alteration...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110379
EISBN: 978-1-62708-247-1
... (Complementary Metal-Oxide-Semiconductor) device, with each of the layers shown required to be stripped off until the desired layer at the area of interest (AOI). Figure 1 A die level image (National Semiconductor – NS16032) [4] Figure 2 A cross-sectioned image of a CMOS device Die...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110461
EISBN: 978-1-62708-247-1
... or chip. This approach is useful when the suspected defect is at an interface or spans across multiple layers of the semiconductor device. Examples of such defects include interfacial layers between interconnects and metal lines, voiding in metal lines, particles and stringers connecting electrically...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110485
EISBN: 978-1-62708-247-1
... In Nanoscale CMOS Devices ,” Proc. 43rd Int'l Symp for Testing and Failure Analysis , Pasadena, CA , November 2017 . [24] Dahanayaka D. 2010 , “ A Scanning Surface Photo Voltage Microscopy Study for Local Mechanical Stress Characterization in Complementary Metal Oxide Semiconductor Devices...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2023
DOI: 10.31399/asm.tb.edfatr.t56090003
EISBN: 978-1-62708-462-8
... of the one of interest, assuming the fins run from left to right. The space between diffusions (negative channel metal oxide semiconductor, or NMOS-NMOS; NMOS-positive channel metal oxide semiconductor, or PMOS; PMOS-PMOS) is also scaled, which means increased proximity to transistors from the top and bottom...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110244
EISBN: 978-1-62708-247-1
... Electro-absorption, also known as the Franz-Keldysh effect [14] , is the change of a material’s bandgap energy due to the application of an electric-field. The electric-field variations introduced by the time-dependent voltages applied to a metal-oxide semiconductor field effect transistor (MOSFET...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110269
EISBN: 978-1-62708-247-1
.... 9 is normally expected to be dark because of the reverse biased diode under it. In reality it is bright because the charges can escape through the open transistor to the drain which is grounded. The gate was charged positively through the oxide during the ion beam scan and thus opened. When...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2023
DOI: 10.31399/asm.tb.edfatr.9781627084628
EISBN: 978-1-62708-462-8