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magnetic field
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Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110111
EISBN: 978-1-62708-247-1
... Abstract Magnetic field imaging (MFI), generally understood as mapping the magnetic field of a region or object of interest using magnetic sensors, has been used for fault isolation (FI) in microelectronic circuit failure analysis for almost two decades. Developments in 3D magnetic field...
Abstract
Magnetic field imaging (MFI), generally understood as mapping the magnetic field of a region or object of interest using magnetic sensors, has been used for fault isolation (FI) in microelectronic circuit failure analysis for almost two decades. Developments in 3D magnetic field analysis have proven the validity of using MFI for 3D FI and 3D current mapping. This article briefly discusses the fundamentals of the technique, paying special attention to critical capabilities like sensitivity and resolution, limitations of the standard technique, sensor requirements and, in particular, the solution to the 3D problem, along with examples of its application to real failures in devices.
Series: ASM Technical Books
Publisher: ASM International
Published: 01 June 1983
DOI: 10.31399/asm.tb.mlt.t62860515
EISBN: 978-1-62708-348-5
... Abstract This chapter discusses three measurements parameters: temperature, strain, and magnetic field strength. It stresses the measurement of temperature because it is the primary variable in nearly all low-temperature material properties. The chapter contains information on methods...
Abstract
This chapter discusses three measurements parameters: temperature, strain, and magnetic field strength. It stresses the measurement of temperature because it is the primary variable in nearly all low-temperature material properties. The chapter contains information on methods and auxiliary materials. Areas of frequent concern, such as thermal contact, heat leak, thermal anchoring, thermal conductivity of greases, insulators, lead wires, ground loops, and feedthroughs are also reviewed. The chapter provides an overview and historical development of temperature scales because the practical use of all thermometers is associated with some approximation of the thermodynamic temperature scale. A short section is devoted to types of temperature measuring devices. The characteristics of commercially available resistance-type strain gauges at low temperatures are stressed.
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in Magnetic and Physical Properties
> Powder Metallurgy Stainless Steels: Processing, Microstructures, and Properties
Published: 01 June 2007
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Published: 01 June 1988
Fig. 2.1 Magnetic field (lines with arrows) around an electrical conductor (cross-hatched circle at center) carrying a current. The current is emerging from the page. The relationship between the directions of the magnetic field and the current is expressed by the “right-hand” rule (thumb
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in Magnetic Field Imaging for Electrical Fault Isolation[1]
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 1 (Left) Magnetic field around a current element. The vertical component as detected by a sensor above the conductor is shown. Note opposite signs of the field on each side of the conductor (image courtesy of D. Vallett, Peaksource). (Right) 2D false-color image representing
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in Magnetic Field Imaging for Electrical Fault Isolation[1]
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 2 (Left) Acquired magnetic field image of a processor unit with a dead short failure. (Right) Corresponding current density distribution on the processor unit computed using the standard inversion on the magnetic data on left. The short location can be identified by the bright current
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in Magnetic Field Imaging for Electrical Fault Isolation[1]
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 3 (Left) Raw magnetic field image of the power distribution network on a microprocessor. (Right) Corresponding current density image obtained by Standard Inversion technique. Images courtesy of D. Vallett, PeakSource.
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in Magnetic Field Imaging for Electrical Fault Isolation[1]
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 7 Theoretically calculated magnetic field amplitude near the open location, marked by the red arrow.
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in Magnetic Field Imaging for Electrical Fault Isolation[1]
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 32 MFI scan results: left, optical; center, magnetic field and right current density image.
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in Magnetic Field Imaging for Electrical Fault Isolation[1]
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 33 MFI scan results: left, optical; center, magnetic field and right current density image.
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Published: 01 June 2008
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Published: 01 June 2008
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Published: 01 June 1983
Figure 13.12 Critical current density, J c , vs. magnetic field, H , for several high-field superconductors.
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Published: 01 June 1983
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Published: 01 June 1983
Figure 14.25 Relative change In electrical resistance as a function of magnetic field for a 220-Ω, 0.1-W carbon-circuit resistor ( Neuringer and Shapira, 1969 ) and for a thermistor with a useful temperature range of 2.9 to 9 K ( Schlosser and Munnings, 1972 ).
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Published: 01 June 1983
Figure 14.28 Relative change in electrical resistance as a function of magnetic field for a platinum resistance thermometer at 67.2 K with the thermometer current ( I ) parallel and perpendicular to the field (H) .
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Published: 01 June 1983
Figure 14.29 Schematic of a thermocouple circuit with the boundary of a magnetic field gradient imposed (a) between the unknown temperature, T x , and the reference temperature, T ref , (b) at T ref , and (c) between T ref and ambient temperature T amb .
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Published: 01 June 1983
Figure 14.30 Relative change in the thermoelectric power as a function of magnetic field for a Au–0.07 at.% Fe thermocouple wire caused by aligning the wire axis parallel and perpendicular to the magnetic field.
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Published: 01 June 1983
Figure 14.31 Relative change In thermoelectric voltage as a function of magnetic field with the variable junction temperature (K) as a parameter for a KP vs. Au–0.07 at.% Fe thermocouple. ( Sample et al., 1974 .) Data by von Middendorff (1971) has been manipulated and included (broken lines
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Published: 01 June 1983
Figure 14.32 Relative change in thermoelectric voltage as a function of magnetic field with the variable junction temperature (K) as a parameter for a type E thermocouple ( Sample et al., 1974 ). Data by von Middendorff (1971) has been manipulated and included (broken lines) for comparison.
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