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low-k dielectrics

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Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110351
EISBN: 978-1-62708-247-1
..., providing information on chemistry assisted etching in silicon oxides and low-k dielectrics. The chapter also discusses the requirements and procedures involved in edit operation: high aspect ratio milling, endpointing, and cutting copper. It then provides an introduction to FIB metal/conductor deposition...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110379
EISBN: 978-1-62708-247-1
... and low k dielectric have been introduced in advanced IC technology, the delayering techniques needed to change from subtractive aluminum metal etch patterning to damascene patterning. When the VIA and trench are etched and both filled with the same copper deposition step, this is known as dual damascene...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110067
EISBN: 978-1-62708-247-1
...-SAM (A: arrow). A slight shift in the data gate produces a SAM image that reveals cracking just outside the bump perimeter (B: arrow), confirmed in an SEM cross-section (C: arrow). Figure 40 SAM image of a flip chip with cracking in the low-k dielectric layers. Often, a defect in the low-k...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110285
EISBN: 978-1-62708-247-1
.... In the alternative approach there is no EBIC interaction and the only restriction on kV is to keep it low enough to not damage ultra-low-k dielectric or produce an ESD condition [17] . Figure 87 Schematic view of the equivalent circuit for interpreting EBAC and the RCI images: (a) no defect...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 June 1983
DOI: 10.31399/asm.tb.mlt.t62860163
EISBN: 978-1-62708-348-5
.... ). Academic Press , New York . 81 – 146 . 10.1016/S0081-1947(08)60456-7 Chant M. J. (1967) . Dielectric properties of some insulating materials over the temperature range 4.2-300° K. Cryogenics 7 , 351 – 354 . 10.1016/0011-2275(67)90009-4 Chovanec F. (1969) . The low...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 June 1983
DOI: 10.31399/asm.tb.mlt.t62860133
EISBN: 978-1-62708-348-5
...) . Studies of heat conductivity at low temperatures. Monatsber. Dtsch. Akad. Wiss. Berl . 6 , 310 – 313 . Hall L. A. (1968) . Survey of Electrical Resistivity Measurements on 16 Pure Metals in the Temperature Range 0 to 273 K . NBS Technical Note 365, National Bureau of Standards , Boulder...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110279
EISBN: 978-1-62708-247-1
... increases the gate leakage due to tunneling of charge carriers into the thin gate oxide. Industry circumvented the problem by introducing a dielectric layer with a high dielectric constant (K) to increase the effective oxide capacitance. The process is also known as the high-K process. Hafnium (HfO 2...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110563
EISBN: 978-1-62708-247-1
... M. , ed., Intech , ( 2010 ). 10.5772/8747 [49] Chiu F-C. , “ A review on conduction mechanisms in dielectric films ”, Advances in Mat. Sci. Eng ., Hindawi , ( 2014 ). 10.1155/2014/578168 [50] Zhang W-M. , Yan H. , Peng Z-K. , Meng G. , “ Electrostatic pull...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110447
EISBN: 978-1-62708-247-1
.... , Pandher R. , Hubbard K. , Syed A. , Henshall G. , Chu Q. , Tokotch N. , Escuro L. , Lapitan M. , Ta G. , Babasa A. and Wable G. , “ Low-silver BGA assembly Phase I – Reflow considerations and joint homogeneity initial report ,” in APEX, Las Vegas NV...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110587
EISBN: 978-1-62708-247-1
.... Khomwongthep, K. Oga and P. Lessner. We would also like to thank J. Kaplan of Cornell Dubilier for his help. Tantalum CAPS (Ta-CAPS) typically consist of a porous Ta anode (for high surface area) with a Ta wire attached to it. The dielectric, amorphous Ta 2 O 5 , typically a few tens of nm thick...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110485
EISBN: 978-1-62708-247-1
.... , Williams C. C. , Wickramasinghe H. K. , “ Atomic force microscope-force mapping and profiling on a sub 100Å scale ,” J. Appl. Phys. , Vol. 61 ( 1987 ), pp. 4723 - 4729 . 10.1063/1.338807 [5] Digital Instruments, Scanning Probe Microscopy Training Notebook , 21 ( 1998 ). [6...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110180
EISBN: 978-1-62708-247-1
...) with a thin dielectric stacked between them. The gate capacitor is never conductive in steady state but if the gate voltage (V GS ) is high enough (higher than threshold voltage V T ), it can bend the bands of silicon into strong inversion so a conductive channel can connect the two junctions in a low ohmic...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2003
DOI: 10.31399/asm.tb.cfap.t69780028
EISBN: 978-1-62708-281-5
... of selected polymers. Properties of selected commodity and engineering plastics Table 1 Properties of selected commodity and engineering plastics Common name Tensile strength, MPa Glass transition temperature ( T g ), °C Melting temperature ( T m ), °C Low-density polyethylene (LDPE) 10...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110434
EISBN: 978-1-62708-247-1
... in the spectrum, and this peak is easily confused for the Si K-α peak at 1.74. In this case, it might be good to compare the observed spectrum with a reference spectrum on pure W to see if the low energy peak is purely due to the W M-α peak or if there is also some Si K-α signal. When considering a completely...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 January 2017
DOI: 10.31399/asm.tb.sccmpe2.t55090341
EISBN: 978-1-62708-266-2
... are dislocations involved in the stress-corrosion process. Because of the absence of plastic deformation, resistance to flaw growth (i.e., critical fracture toughness, K Ic ) in glasses and most ceramics is low (of the order of 1  to 4 MPa m ,  or 0 .9  to 3.6   ksi in. ), which means...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110652
EISBN: 978-1-62708-247-1
.... Figure 12 Optical photo showing location of the multiple data lines (horizontal) feeding into buffers below. Figure 13 Photoemission from beneath the metallization at the input buffer damaged by CDM stress. There is no visible damage from a low magnification optical view. Figure 18...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110613
EISBN: 978-1-62708-247-1
..., ” Int. Symp. for Testing and Failure Analysis (ISTFA) , Oct. 1990 . 3. Keshavarzi A. , Roy K. , and Hawkins C. , “ Intrinsic leakage in low power deep submicron CMOS ICs, ” International Test Conference (ITC) , pp. 146 - 155 , Nov. 1997 . 4. Hawkins C. , Soden...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2003
DOI: 10.31399/asm.tb.cfap.9781627082815
EISBN: 978-1-62708-281-5
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110666
EISBN: 978-1-62708-247-1
... Figure 8 Classic Bathtub curve for failure rates. Figure 9 Concept behind outliers. Figure 2 AOQ curve indicating AOQL at relative maximum [4] . Figure 3 Example experimental design to evaluate and qualify low-residue soldering for military and commercial...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2010
DOI: 10.31399/asm.tb.scm.t52870201
EISBN: 978-1-62708-314-0
... • Kardos J.L. , The Processing Science of Reactive Polymer Composites , Advanced Composites Manufacturing , John Wiley and Sons, Inc. , 1997 , p 68 – 77 • Karkkainen R. , Madhukar M. , Russell J. , and Nelson K. , Empirical Modeling of In-Cure Volume Changes of 3501-6...