Optoelectronic components can be readily classified as active light-emitting components (such as semiconductor lasers and light emitting diodes), electrically active but non-emitting components, and inactive components. This chapter focuses on the first category, and particularly on semiconductor lasers. The discussion begins with the basics of semiconductor lasers and the material science behind some causes of device failure. It then covers some of the common failure mechanisms, highlighting the need to identify failures as wearout or maverick failures. The chapter also covers the capabilities of many key optoelectronic failure analysis tools. The final section describes the common steps that should be followed so as to assure product reliability of optoelectronic components.

This chapter examines some of the behaviors that suit materials for electrical and electronic applications. It begins by explaining how charge carriers move in metals and semiconductors and how properties such as conductivity, mobility, and resistivity are derived. It discusses the significance of energy bands, intrinsic and extrinsic conduction, and the properties of compound semiconductors. It also covers semiconductor devices, including p-n junctions, light emitting diodes, transistors, and piezoelectric crystals.

This appendix defines abbreviations, acronyms, and symbols presented within this book.

Photon emission (PE) is one of the major optical techniques for contactless isolation of functional faults in integrated circuits (ICs) in full electrical operation. This article describes the fundamental mechanisms of PE in silicon based ICs. It presents the opportunities of contactless characterization for the most important electronic device, the MOS - Field Effect Transistor, the heart of ICs and their basic digital element, the CMOS inverter. The article discusses the specification and selection of detectors for proper PE applications. The main topics are image resolution, sensitivity, and spectral range of the detectors. The article also discusses the value and application of spectral information in the PE signal. It describes state of the art IC technologies. Finally, the article discusses the applications of PE in ICs and also I/O devices, integrated bipolar transistors in BiCMOS technologies, and parasitic bipolar effects like latch up.

This chapter discusses the types of sensors used in sheet forming operations and the information they provide. It explains how force sensors protect equipment from overloads due to tool wear, friction, and misfeeds, how displacement and proximity sensors help to prevent die crashes, how acoustic emission, ultrasonic, and eddy current sensors detect tool breakage and part defects such as cracks, and how roller ball and optical sensors measure material flow. It also discusses the role of draw-in, wrinkle, oil-monitoring, and vision sensors and explains how material properties can be derived in real time from various sensor outputs.

This chapter sheds light on the challenges involved in diagnosing faults in analog, mixed-signal, and RF circuits. It describes some of the work being done to leverage the benefits of standardization, improve fault simulation tools, and overcome limitations on optical fault isolation techniques. One of the solutions being considered is to integrate LEDs throughout the analog circuit, thereby using light to report the status of internal signals.

This chapter presents the theory and practice associated with the application of thin films. The first half of the chapter describes physical deposition processes in which functional coatings are deposited on component surfaces using mechanical, electromechanical, or thermodynamic techniques. Physical vapor deposition (PVD) techniques include sputtering, e-beam evaporation, arc-PVD, and ion plating and are best suited for elements and compounds with moderate melting points or when a high-purity film is required. The remainder of the chapter covers chemical vapor deposition (CVD) processes, including atomic layer deposition, plasma-enhanced and plasma-assisted CVD, and various forms of vapor-phase epitaxy, which are commonly used for compound films or when deposit purity is less critical. A brief application overview is also presented.

This article addresses the ancillary issues regarding the nanoprobing and characterization of transistors, probing copper metallization layers, and the various imaging techniques. The discussion includes several characterization examples of known transistor failure types, namely four probe transistor characterization, two probe transistor characterization, and probing and characterizing metallization issues. The imaging techniques discussed are those that are specific to atomic force nanoprober or scanning electron microscope based tools. They are current contrast imaging, scanning capacitance imaging, e-beam absorbed current imaging, e-beam induced current imaging, e-beam induced resistance change imaging, and active voltage contrast imaging.

Electronics spans a number of devices, their configurations, and properties. A challenge is to identify those electronic subjects essential for failure analysis. This article reviews the normal operation and terminal characteristics of MOSFET. It describes the electronic behavior of bridges, opens, and parametric delay defects, which is essential for understanding the symptoms of a failing IC. These electronic principles are then applied to a CMOS failure analysis technique using a power supply signature analysis.

Root cause of failure in automotive electronics cannot be explained by the failure signatures of failed devices. Deeper investigations in these cases reveals that a superimposition of impact factors, which can never be represented by usual qualification testing, caused the failure. This article highlights some of the most frequent early life failure types in automotive applications. It describes some of the critical things to be considered while handling packages and printed circuit board layout. The article also provides information on failure anamnesis that shows how to use history, failure signatures, environmental conditions, regional failure occurrences, user profile issues, and more in the failure analysis process to improve root cause findings.

Surface modification technologies improve the performance of tool steels. This chapter discusses the processes involved in oxide coatings, nitriding, ion implantation, chemical and physical vapor deposition processing, salt bath coating, laser and electron beam surface modification, and boride coatings that improve the performance of hot-work and high-speed tool steels.

This chapter discusses coating technologies that are applicable to beryllium, including physical and chemical vapor deposition, thermal evaporation, electroplating, sputtering, ion plating, and plasma arc spraying. It describes the advantages and disadvantages of each method and the effect of temperature, pressure, and other process variables on the microstructures and properties developed.

This chapter gives a brief review of the development of additive manufacturing (AM) and the appeal of different of different AM methods.

Time-domain based characterization methods, mainly time-domain reflectometry (TDR) and time-domain transmissometry (TDT), have been used to locate faults in twisted cables, telegraph lines, and connectors in the electrical and telecommunication industry. This article provides a brief review of conventional TDR and its application limitations to advanced packages in semiconductor industry. The article introduces electro optical terahertz pulse reflectometry (EOTPR) and discusses how its improvements of using high frequency impulse signal addressed application challenges and quickly made it a well-adopted tool in the industry. The third part of this article introduces a new method which combines impulse signal and the TDT concept, and discusses a combo TDR and TDT method. Cases studies and application notes are shared and discussed for each technique. Application benefits and limitations of these techniques (TDR, EOTPR, and combo TDR/TDT) are summarized and compared.

This article provides an overview of the most common micro-analytical technique in the failure analysis laboratory: energy dispersive X-ray spectroscopy (EDS). It discusses the general characteristics, advantages, and disadvantages of some of the X-ray detectors attached to the scanning electron microscope chamber including the lithium-drifted EDS detector, silicon drift detector (SDD), and wavelength dispersive X-ray detector. The article then provides information on qualitative and quantitative X-ray analysis programs followed by a discussion on EDS elemental mapping. The discussion includes a comparison of scanning transmission electron microscope-EDS elemental mapping and mapping with an SDD. A brief section is devoted to the discussion on the artifacts that occur during X-ray mapping.

This chapter discusses the principles of scanning transmission electron microscopy (STEM) as implemented using conventional scanning electron microscopes (SEMs). It describes the pros and cons of low-energy imaging and diffraction, addresses basic hardware requirements, and provides information on imaging modes, detector positioning and alignment, and the effect of contrast reversal. It also discusses beam convergence and angular selectivity, the use of application-specific masks, and how to generate grain orientation maps for different material systems.

This chapter discusses the basic components in an induction heat treating system. It describes the design and operating characteristics of power supplies, load-matching transformers, tuning capacitors, power regulators, controllers, process monitors, and diagnostic systems. It also provides information on fixtures and work-handling devices, quench systems, and load matching and tuning procedures.