Increasing growth of high-pressure cold spraying applications on the industrial scale have forced global powder producers to face this challenge and develop specific powders for cold spray applications. This chapter provides information on the properties, classification, characteristics, manufacturing, and procedures for packaging of powders specific to cold spray applications.

This chapter discusses the use of electron microscopy in metallographic analysis. It explains how electrons interact with metals and how these interactions can be harnessed to produce two- and three-dimensional images of metal surfaces and generate crystallographic and compositional data as well. It discusses the basic design and operating principles of scanning electron microscopes, transmission electron microscopes, and scanning transmission electron microscopes and how they are typically used. It describes the additional information contained in backscattered electrons and emitted x-rays and the methods used to access it, namely wavelength and energy dispersive spectroscopy and electron backscattering diffraction techniques. It also describes the role of focused ion beam milling in sample preparation and provides information on atom probes, atomic force microscopes, and laser scanning microscopes.

Moore's Law has driven many degree circuit features below the resolving capability of optical microscopy. Yet the optical microscope remains a valuable tool in failure analysis. This article describes the physics governing resolution and useful techniques for extracting the small details. It begins with the basic microscope column and construction. The article discusses microscope adjustments, brightfield and darkfield illumination, and microscope concepts important to liquid crystal techniques. It also discusses solid immersion lenses, infrared and ultraviolet microscopy and concludes with laser microscopy techniques such as thermal induced voltage alteration and external induced voltage alteration.

This article reviews the basic physics behind active photon injection for local photocurrent generation in silicon and thermal laser stimulation along with standard scanning optical microscopy failure analysis tools. The discussion includes several models for understanding the local thermal effects on metallic lines, junctions, and complete devices. The article also provides a description and case study examples of multiple photocurrent and thermal injection techniques. The photocurrent examples are based on Optical Beam-Induced Current and Light-Induced Voltage Alteration. The thermal stimulus examples are Optical Beam-Induced Resistance Change/Thermally-Induced Voltage Alteration and Seebeck Effect Imaging. Lastly, the article discusses the application of solid immersion lenses to improve spatial resolution.

This article introduces the wafer-level fault localization failure analysis (FA) process flow for an accelerated yield ramp-up of integrated circuits. It discusses the primary design considerations of a fault localization system with an emphasis on complex tester-based applications. The article presents examples that demonstrate the benefits of the enhanced wafer-level FA process. It also introduces the setup of the wafer-level fault localization system. The application of the wafer-level FA process on a 22 nm technology device failing memory test is studied and some common design limitations and their implications are discussed. The article presents a case study and finally introduces a different value-add application flow capitalizing on the wafer-level fault localization system.

This chapter provides perspective on the physical dimensions associated with the microstructure of steel and the instruments that reveal grain size, morphology, phase distributions, crystal defects, and chemical composition, from which properties and behaviors derive. The chapter also reviews the definitions and classifications used to identify and differentiate commercial steels, including the AISI/SAE and UNS designation systems.

This chapter discusses the basic steps of a failure investigation. It explains that the first step is to gather and document information about the failed component and its operating history. It advises investigators to visit the failure site as soon as possible to record damages and collect test specimens for subsequent examination and chemical analysis. It also discusses the role of mechanical property testing, the use of nondestructive evaluation, and the final step of generating a report.

Laser Voltage Probing (LVP) is a key enabling technology that has matured into a well-established and essential analytical optical technique that is crucial for observing and evaluating internal circuit activity. This article begins by providing an overview on LVP history and LVP theory, providing information on electro-optical effects and free-carrier effects. It then focuses on commercially available continuous wave LVP systems. Alternative optoelectronic imaging and probing technologies for fault isolation, namely frequency mapping and laser voltage tracing, are also discussed. The subsequent section provides information on the use of Visible Laser Probing. The article closes with some common LVP observations/considerations and limitations and future work concerning LVP.

This chapter discusses the engineering significance of steel and briefly describes its chemical composition, crystal structure, Fe-C phases, and associated characterization techniques.

This chapter focuses on the processes and mechanisms involved in fatigue. It begins with a review of some of the early theories of fatigue and the tools subsequently used to obtain a better understanding of the fatigue process. It then explains how plasticity plays a major role in creating dislocations, breaking up grains into subgrains, and causing microscopic imperfections to coalesce into larger flaws. It also discusses the factors that contribute to the development and propagation of fatigue cracks, including surface deterioration, volumetric and environmental effects, foreign particles, and stresses generated by rolling contact.

Photon emission (PE) is one of the major optical techniques for contactless isolation of functional faults in integrated circuits (ICs) in full electrical operation. This article describes the fundamental mechanisms of PE in silicon based ICs. It presents the opportunities of contactless characterization for the most important electronic device, the MOS - Field Effect Transistor, the heart of ICs and their basic digital element, the CMOS inverter. The article discusses the specification and selection of detectors for proper PE applications. The main topics are image resolution, sensitivity, and spectral range of the detectors. The article also discusses the value and application of spectral information in the PE signal. It describes state of the art IC technologies. Finally, the article discusses the applications of PE in ICs and also I/O devices, integrated bipolar transistors in BiCMOS technologies, and parasitic bipolar effects like latch up.

This chapter discusses the various failure analysis techniques for microelectromechanical systems (MEMS), focusing on conventional semiconductor manufacturing processes and materials. The discussion begins with a section describing the advances in integration and packaging technologies that have helped drive the further proliferation of MEMS devices in the marketplace. It then shows some examples of the top MEMS applications and quickly discusses the fundamentals of their workings. The next section describes common failure mechanisms along with techniques and challenges in identifying them. The chapter also provides information on the testing of MEMS devices. It covers the two common challenges in sample preparation for MEMS: decapping, or opening up the package, without disturbing the MEMS elements; and removing MEMS elements for analysis. Finally, the chapter discusses the aspects of failure analysis techniques that are of particular interest to MEMS.

Weldment failures may be divided into two classes: those identified during inspection and mechanical testing and those discovered in service. Failures in service arise from fracture, wear, corrosion, or deformation. In this article, major attention is directed toward the analysis of service failures. The discussion covers various factors that may lead to the failure of arc welds, electroslag welds, electrogas welds, resistance welds, flash welds, upset butt welds, friction welds, electron beam welds, and laser beam welds.

This chapter, presented in a question-and-answer format, covers many practical aspects of high-entropy alloys (HEAs). It provides clear and concise answers to more than 50 questions, imparting knowledge on alloying elements, heat treatments, diffusion mechanisms, phase formation, lattice distortion, crystal and grain structures, structure-property relationships, microstructure control, and characterization methods. It likewise explains how to calculate the effect of strengthening processes on the mechanical properties of HEAs and offers insights on how to balance strength, ductility, and density for specific applications. It also provides information on twinning behaviors, stacking faults, elastic properties, coating and film deposition methods, manufacturing challenges, and the use of computational techniques for alloy design.

The complexity of semiconductor chips and their packages has continuously challenged the known methods to analyze them. With larger laminates and the inclusion of multiple stacked die, methods to analyze modern semiconductor products are being pushed toward their limits to support these 2.5D and 3D packages. This article focuses on these methods of fault isolation, non-destructive imaging, and destructive techniques through an iterative process for failure analysis of complex packages.

Residual, or locked-in internal, stresses are regions of misfit within a metal part or assembly that can cause distortion and fracture just as can the more obvious applied, or service, stresses. This chapter describes the fundamental facts about residual stresses and discusses the basic mechanisms of residual stress formation: thermal, transformational, mechanical, and chemical.

This chapter introduces the key powder fabrication attributes to assist in the identification of the right powders for an application. First, it describes the characteristics of engineering powders such as particle size distribution, powder shape and packing density, surface area, powder flow and rheology, and chemical analysis. The chapter then describes the general categories of powder fabrication methods, namely mechanical comminution, electrochemical precipitation, thermochemical reaction, and phase change and atomization. It provides information on the two largest contributors to powder price, namely raw material cost and conversion cost. The applicability of various processes to specific material systems is mentioned throughout this chapter.

There are several analytical methods available that can be used in-line on whole wafers as well as off-line on de-processed products that are returned from the field. These techniques are surface analytical techniques that can be used to characterize the bulk of the material. The main six methods used in semiconductor industry are: Auger spectroscopy, dynamic secondary ion mass spectroscopy, time of flight static secondary ion mass spectroscopy (ToF-SIMS), X-ray photoelectron spectroscopy, scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDX), and transmission electron microscope-EDX. This review specifically addresses ToF-SIMS and describes some typical examples of the application of Auger and SEM-EDX.