Cross-sectioning is a technique used for process development and reverse engineering. This article introduces novice analysts to the methods of cross-sectioning semiconductor devices and provides a refresher for the more experienced analysts. Topics covered include encapsulated (potted) device sectioning techniques, non-encapsulated device techniques, utilization of the focused ion beam (FIB) making a cross-section and/or enhancing a physically polished one. Delineation methods for revealing structures are also discussed. These can be chemical etchants, chemo-mechanical polishing, and ion milling, either in the FIB or in a dedicated ion mill.

This chapter begins with an overview of the history of ion nitriding. This is followed by sections that describe how the ion nitriding process works, glow discharge characteristics, process parameters requiring good control, and the applications of plasma processing. The chapter explores what happens in the ion nitriding process and provides information on its gas ratios. It describes the reactions that occur at the surface of the material being treated during iron nitriding and defines corner effect and nitride networking. Further, the chapter provides information on the stability of surface layers and processes involved in the degradation of surface finish and control of the compound zone formation. Gases primarily used for ion nitriding and the control parameters used in ion nitriding are also covered. The chapter also presents the philosophies and advantages of the plasma generation technique for nitriding. It concludes with processes involved in oxynitriding.

Ion nitriding equipment can be categorized into two groups: cold-wall continuous direct current (dc) equipment and hot-wall pulsed dc equipment. This chapter focuses on these two categories along with other important considerations for ion (plasma) nitriding equipment and processing. Other important considerations discussed include the hollow cathode effect, sputter cleaning, furnace loading, pressure/voltage relationships, workpiece masking, and furnace configuration options. The chapter describes five methods of cooling parts from the process temperature to an acceptable exposure temperature after plasma nitriding. The chapter also presents some of the advantages of the pulsed plasma process.