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implants
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in Surface Analysis and Material Characterization Techniques Used in Semiconductor Industry to Identify and Prevent Failures
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 15 Depth profiles of Li + , Na + and K + implants in a 200 nm SiO 2 dielectric layer using O 2 + as sputter projectile. The profile clearly shows the sputter beam induced diffusion of the mobile ions through the dielectric layer and, pilling up at the SiO 2 /Si interface.
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in Surface Analysis and Material Characterization Techniques Used in Semiconductor Industry to Identify and Prevent Failures
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 16 Depth profiles of Li + , Na + and K + implants in a 200 nm SiO 2 dielectric layer using O 2 -clusters as sputter projectile. Only a small fraction the of the total dose (Li + : 0.3 %, Na + : 0.1 % and K + : 0%) can be detected at the interface.
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Published: 01 January 2015
Fig. 15.25 Titanium dental tools, surgical screws, and implants. Source: Ref 15.24
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Published: 01 March 2002
Fig. 7.11 Sketch showing location and shape of some conventional orthopedic implants made of P/M cobalt-base superalloys
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Published: 01 November 2019
Figure 46 Schematic showing the increased resistance of a depleted LDD implant on the Drain side of the transistor. The change in resistance on one side of the transistor causes the electrical performance of the transistor to become asymmetrical.
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Published: 01 November 2019
Figure 47 Schematic showing the increased resistance of a depleted LDD implant. The change in resistance on one side of the transistor causes the electrical performance of the transistor to become asymmetrical.
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Published: 01 November 2019
Figure 48 Family of curves for a transistor with a depleted LDD implant. The Id vs. Vg step Vds family of curves (a) shows a typical Vt with suppressed current. When the bias is switched, the Is vs. Vg step Vsd family curves (reverse sweep) (b) shows a higher threshold voltage (Vt
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Published: 01 November 2019
Figure 49 A transistor schematic showing a blocked LDD implant defect under the spacer. The spacer acts as a thick gate oxide over the p- substrate resulting in a degraded transistor with a significantly higher Vt and resistance.
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Published: 01 November 2019
Figure 51 Stained junction TEM showing missing LDD implant on drain side of the TEM verifying the root cause of the asymmetrical Vt shift electrical signature [7 , 8] .
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Published: 01 November 2019
Figure 1 Modeled sputter yield (y) and implant depth of Cs + , Xe + , Ga + , Ar + , Ne + , and He + with a beam energy of 30keV in silicon. For each ion, 30 trajectories are shown in red, while the resulting silicon atom recoils are shown in green. The x-axis radial spread shown for each
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Published: 01 November 2019
Figure 9 An example of SIMS depth profiling of a 500 eV 11 B implant in silicon.
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Published: 01 January 2015
Fig. 22.3 Nitrogen concentration versus depth for implantation of iron performed at various beam energies. Source: Ref 22.14
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Published: 01 January 2015
Fig. 22.4 Schematic illustration of implantation of iron with nitrogen ions (top). Nitrogen and damage profiles (lower left). Cascade region of high-defect-density generation (lower right). Source: Ref 22.26
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Published: 01 January 2015
Fig. 15.24 Titanium plug implanted into a human cheek bone into which is screwed an artificial tooth. The rough surface promotes bone adhesion to the titanium screw.
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Published: 01 July 1997
Fig. 10 Sample specifications for implant test specimens. Source: Ref 3
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Published: 01 January 1998
Fig. 16-6 Schematic of nitrogen atom implantation in iron (top), N and damage profiles (lower left), and defect generation (lower right). Source: Ref 3
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Published: 01 January 2015
Fig. 15.23 (a) Titanium artificial knee with cut-away view. (b) Titanium artificial hip. The rough implant surface promotes bone adhesion to the implant.
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Book Chapter
Series: ASM Technical Books
Publisher: ASM International
Published: 01 January 2015
DOI: 10.31399/asm.tb.spsp2.t54410551
EISBN: 978-1-62708-265-5
... This chapter describes surface modification processes that go beyond conventional heat treatments, including plasma nitriding, plasma carburizing, low-pressure carburizing, ion implantation, physical and chemical vapor deposition, salt bath coating, and transformation hardening via high-energy...
Abstract
This chapter describes surface modification processes that go beyond conventional heat treatments, including plasma nitriding, plasma carburizing, low-pressure carburizing, ion implantation, physical and chemical vapor deposition, salt bath coating, and transformation hardening via high-energy laser and electron beams. The chapter compares methods and includes several example applications.
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Published: 01 December 2000
Fig. 11.6 Percent increase in hardness with depth into material for nitrogen ion implanted in the alpha-beta alloy Ti-6Al-4V
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