X-ray imaging systems have long played a critical role in failure analysis laboratories. This article begins by listing several favorable traits that make X-rays uniquely well suited for non-destructive evaluation and testing. It then provides information on X-ray equipment and X-ray microscopy and its application in failure analysis of integrated circuit (IC) packaging and IC boards. The final section is devoted to the discussion on nanoscale 3D X-ray microscopy and its applications.

Laser Voltage Probing (LVP) is a key enabling technology that has matured into a well-established and essential analytical optical technique that is crucial for observing and evaluating internal circuit activity. This article begins by providing an overview on LVP history and LVP theory, providing information on electro-optical effects and free-carrier effects. It then focuses on commercially available continuous wave LVP systems. Alternative optoelectronic imaging and probing technologies for fault isolation, namely frequency mapping and laser voltage tracing, are also discussed. The subsequent section provides information on the use of Visible Laser Probing. The article closes with some common LVP observations/considerations and limitations and future work concerning LVP.

This chapter describes three approaches for 3D hot-spot localization of thermally active defects by lock-in thermography (LIT). In the first section, phase-shift analysis for analyzing stacked die packages is performed. The second example employs defocusing sequences for the localization of resistive electrical shorts in 3D architectures, and the third operates in cross sectional LIT mode to investigate defects in the insulation liner of Through Silicon Vias. All three approaches allow for a precise localization of thermally active defects in all three spatial dimensions to guide subsequent high-resolution physical analyses.

This chapter discusses the types of sensors used in sheet forming operations and the information they provide. It explains how force sensors protect equipment from overloads due to tool wear, friction, and misfeeds, how displacement and proximity sensors help to prevent die crashes, how acoustic emission, ultrasonic, and eddy current sensors detect tool breakage and part defects such as cracks, and how roller ball and optical sensors measure material flow. It also discusses the role of draw-in, wrinkle, oil-monitoring, and vision sensors and explains how material properties can be derived in real time from various sensor outputs.

The ultimate goal of the failure analysis process is to find physical evidence that can identify the root cause of the failure. Transmission electron microscopy (TEM) has emerged as a powerful tool to characterize subtle defects. This article discusses the sample preparation procedures based on focused ion beam milling used for TEM sample preparation. It describes the principles behind commonly used imaging modes in semiconductor failure analysis and how these operation modes can be utilized to selectively maximize signal from specific beam-specimen interactions to generate useful information about the defect. Various elemental analysis techniques, namely energy dispersive spectroscopy, electron energy loss spectroscopy, and energy-filtered TEM, are described using examples encountered in failure analysis. The origin of different image contrast mechanisms, their interpretation, and analytical techniques for composition analysis are discussed. The article also provides information on the use of off-axis electron holography technique in failure analysis.

Many defects generate excessive heat during operation; this is due to the power dissipation associated with the excess current flow at the defect site. There are several thermal detection techniques for failure analysis and this article focuses on infrared thermography with lock-in detection, which detects an object's temperature from its infrared emission based on blackbody radiation physics. The basic principles and the interpretation of the results are reviewed. Some typical results and a series of examples illustrating the application of this technique are also shown. Brief sections are devoted to the discussion on liquid-crystal imaging and fluorescent microthermal imaging technique for thermal detection.

This article provides an introduction to the dynamic random access memory (DRAM) operation with a focus to localization techniques of the defects combined with some physical failure analysis examples and case studies for memory array failures. It discusses the electrical measurement techniques for array failure analysis. The article then presents know-how-based analysis techniques of array failures by bitmap classification. The limits of bitmapping that lead to well-known localization techniques like thermally induced voltage alteration and optical beam induced resistance change are also discussed. The article concludes by providing information on soft defect localization techniques.

Diagnosing the root cause of a failure is particularly challenging if the symptom of the failure is not consistently observable. This article focuses on Laser Assisted Device Alteration/Soft Defect Localization (LADA/SDL), a global fault isolation technique, for detecting such failures. The discussion begins with a section describing the three steps in LADA/SDL analysis setup: create the test loop with the fail flag and loop trigger, select the laser dwell time, and select the shmoo bias point. An overview of LADA/SDL workflow is then presented followed by a brief section on time-resolved LADA. The closing pages of the article consider in detail SDL laser interaction physics and LADA laser interaction physics.

Scanning Probe Microscope (SPM) has an increasing important role in the development of nanoscale semiconductor technologies. This article presents a detailed discussion on various SPM techniques including Atomic Force Microscopy (AFM), Scanning Kelvin Probe Microscopy, Scanning Capacitance Microscopy, Scanning Spreading Resistance Microscopy, Conductive-AFM, Magnetic Force Microscopy, Scanning Surface Photo Voltage Microscopy, and Scanning Microwave Impedance Microscopy. An overview of each SPM technique is given along with examples of how each is used in the development of novel technologies, the monitoring of manufacturing processes, and the failure analysis of nanoscale semiconductor devices.

Magnetic field imaging (MFI), generally understood as mapping the magnetic field of a region or object of interest using magnetic sensors, has been used for fault isolation (FI) in microelectronic circuit failure analysis for almost two decades. Developments in 3D magnetic field analysis have proven the validity of using MFI for 3D FI and 3D current mapping. This article briefly discusses the fundamentals of the technique, paying special attention to critical capabilities like sensitivity and resolution, limitations of the standard technique, sensor requirements and, in particular, the solution to the 3D problem, along with examples of its application to real failures in devices.

In embedded systems, the separation between system level, board level, and individual component level failure analysis is slowly disappearing. In order to localize the initial defect area, prepare the sample for root cause analysis, and image the exact root cause, the overall functionality has to be maintained during the process. This leads to the requirement of adding additional techniques that help isolate and image defects that are buried deeply within the board structure. This article demonstrates an approach of advanced board level failure analysis by using several non-destructive localization techniques. The techniques considered for advanced fault isolation are magnetic current imaging for shorts and opens; infrared thermography for electrical shorts; time-domain-reflectometry for shorts and opens; scanning acoustic microscopy; and 2D/3D X-Ray microscopy. The individual methods and their operational principles are introduced along with case studies that will show the value of using them on board level defect analysis.

With the commercialization of heavier and lighter ion beams, adoption of focused ion beam (FIB) use for analysis of challenging regions of interest (ROI) has grown. In this chapter, the authors focus on highlighting commercially available and complementary FIB technologies and their implementation challenges and application trends.

The scanning acoustic microscope (SAM) is an important tool for development of improved molded and flip chip packages. The SAM used for integrated circuit inspection is a hybrid instrument with characteristics of both the Stanford SAM and the C-scan recorder. This chapter presents the historical development of SAM for integrated circuit package inspection, SAM theory, and analysis considerations. Case studies are presented to illustrate the practical applications of SAM. Other non-destructive imaging tools are briefly discussed, as well as SAM challenges and methods including spectral signature analysis and GHz-SAM.

An architectural shift to buried power rails (BPRs) with backside power delivery (BPD) is on the horizon as CMOS technology approaches the 2 nm node. The obstruction created by the presence of BPD networks obsoletes many of the electrical fault isolation (EFI) techniques that have been used for the past few decades and severely degrades the performance of others. This chapter provides an overview of EFI methods that are still applicable to ICs with BPD networks, including e-beam and atomic force probing, x-ray and magnetic field imaging, and lock-in thermography. It assesses the technical challenges of each method as well as the potential for improvement.

Recent trends in electronic packaging, including the growing use of 3D designs and heterogeneous integration, are greatly adding to the complexity of isolating faults in semiconductor products. This chapter reviews the latest IC packaging and integration solutions and assesses the readiness level of fault isolation tools and techniques. It examines the capabilities, limitations, and optimization potential of x-ray tomography and magnetic field imaging, describes various approaches for optical fault isolation, and compares and contrasts pre-OFI sample preparation methods. The chapter also explains how time-domain and electro-optical terahertz pulse reflectometry are used to find shorts and opens in ICs and how challenges related to heterogenous integration may be met through design for testability (DFT) and built-in self-test (BIST) accommodations and the use of passive interposers.

This chapter assesses the capabilities and limitations of electric fault isolation (EFI) technology, the measurement challenges associated with new device architectures, and the pathways for improvement in emission microscopy, laser stimulation, and optical probing. It also assesses the factors that influence signal strength, spatial and timing resolution, and alignment accuracy between signal response images and the physical layout of the IC.

Critical process variables must be controlled to ensure uniform and repeatable heat-treating results. This chapter covers the subject of controlling the heat-treating process. All heat-treating equipment utilizes various sensors, timers, and other components to monitor and control the process utilizing various control methods. The chapter focuses on temperature control and measurement, including a discussion about thermocouples and devices for measuring thermal and electrical conductivity.

This chapter describes some of the most effective tools for investigating boiler tube failures, including scanning electron microscopy, optical emission spectroscopy, atomic absorption spectroscopy, x-ray fluorescence spectroscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. It explains how the tools work and what they reveal. It also covers the topic of image analysis and its application in the measurement of grain size, phase/volume fraction, delta ferrite and retained austenite, inclusion rating, depth of carburization/decarburization, scale thickness, pearlite banding, microhardness, and hardness profiles. The chapter concludes with a brief discussion on the effect of scaling and deposition and how to measure it.

This chapter discusses radiography methods using x-rays, gamma rays, and neutrons. It begins with a discussion on the applications and principles of radiography followed by sections providing information on the sources of radiation, classifications, and characteristics of x-ray tubes. Three primary attenuation processes of electromagnetic radiation, namely photoelectric effect, Compton scattering, and pair production, are covered. The chapter then discusses the principles of shadow formation, the process involved in the conversion of radiation into a form suitable for observation, and the characteristics of x-ray film. It provides information on various exposure factors in film radiography. The chapter provides a description of the characteristics that differentiate neutron radiography from x-ray or gamma ray radiography. The application of neutron radiography is described in terms of its advantages for improved contrast on low atomic number materials, discrimination between isotopes, or inspection of radioactive specimens.