Fig. 5 (a) Amplitude image, (b) phase image,(c) 0°/-90° image from the region indicated in (b), and (d) power distribution, numerically deconvoluted from (c), of a hall sensor circuit; supply voltage pulsed with 22 Hz. More

Figure 15 (a) Image focused on laminate (b) Image focused on interposer (c) Image focused on die (d) Compilation of 100 images reconstructed to show laminate, interposer, and die in focus More

Fig. 12.17 EBSD image quality image for the samples in Fig. 12.16 . After reduction of 90% through cold roling and annealing at (a) 540 °C (1000 °F), (b) 560 °C (1040 °F), and (c) 580 °C (1075 °F). Darker areas indicate lower image quality index, corresponding to the nonrecrystallized areas More

Figure 29 High resolution scans overlaid on optical image. Bottom image is top view of the CAD layout used for reference. TSV pairs 18, 23, and 28 (counting from right as shown in Fig. 28 ) seems to be the shorted TSV pairs. More

Fig. 8 (a) Optical image of a flip chip device, (b) LIT image shows thermally active area, and (c) SEM image of a contact cross section showing additional insulator layer (denoted by red arrows). More

Figure 15 FMI thermal image of an electro-migration test structure. The image was generated by dividing a cold (unpowered) by a hot (powered) FMI image. More

Figure 17 TEM image of the TSV structure with a sidewall defect (Top). STEM image (lower left) and EDS maps (lower middle and right) of the defect revealing the migration of Cu from the TSVs filling through its side wall isolation resulting in a short path. More

Figure 12 SEM image (left) and Electron Beam Signal Image Mapping (ESIM) (right). The white area in ESIM image shows the location where the device toggles at the specified frequency. The green circles indicate the toggling device locations in both images. More

Figure 18 An EBIRCH image on the left and corresponding SEM image on the right. The yellow arrow points to a bright line in the signal. The bright line ends at a point contained within the red rectangle. The red line is drawn on both images to enable one to identify the precise location More

Fig. 13 Cleaning up Au smear. Left image shows the smear. Right image shows smear cleaned up. Red arrows show direction of wheel rotation with respect to sample surface. More

Fig. 24 Top image shows section before ion milling. The bottom image is the same area after ion milling. More

Figure 20 A planar STEM-ADF image of a SRAM bit (from Figure 19 ). The image is formed by collecting electrons scattered at low angles. Poly-silicon grain boundaries are delineated because of electron diffraction. More

Figure 11 AFM topographic image (left) and corresponding SKPM image (right) of the NFET portion of a 6-transistor SRAM cell at silicon level. More

Figure 12 AFM topographic image (left) and the corresponding SKPM image (right) of a (100) silicon wafer fragment that has been mechanically stressed. More

Figure 16 (a) Image focused on laminate (b) Image focused on defect at corner (c) Image focused on interposer (d) Compilation of 100 images reconstructed to show laminate, corner defect, and die in focus More

Figure 25 Open IND Failure (a) external as-is image and (b) SEM image showing delamination in a cross-sectioned view. More

Figure 7 Super imposition of X-Ray image with IR lock-in Thermography image identified the location of heat source to be in the package; between bond wires. More

Figure 7 X-ray image of packaged lead frame superimposed with current density image shows the location of short (red arrow). [7] More

Figure 23 The left image of crystal defects is darkfield illuminated, the right image is brightfield. Light scattering objects show up well against the dark background. More

Fig. 5.22 Sketch of a distorted image. (a) Barrel-type image and (b) pincushion-type image More