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Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110335
EISBN: 978-1-62708-247-1
... and their implementation challenges and application trends. focused ion beam gallium microelectronics failure analysis Introduction FIB Technology Updates FIB Applications Automation Summary Acknowledgments References VII. References [1] Soden Jerry M. , and Anderson Richard E...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110351
EISBN: 978-1-62708-247-1
... Symp for Testing and Failure Analysis , Phoenix, AZ , November 2012 , pp. 505 - 508 . [16] DiBattista M. , Unpublished. [17] Mair G.L.R. , Grindrod D. C. , Mousa M. S. , Latham R.V. , “ Beam-energy distribution measurements of liquid gallium field-ion sources...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110323
EISBN: 978-1-62708-247-1
... , Klumpp A and Kwakman L , A Comparison of Xenon Plasma FIB Technology with Conventional Gallium LMIS FIB: Imaging, Milling, and Gas-Assisted Applications , Microscopy and Microanalysis 17 ( Suppl 2 ), pp. 652 - 653 , January 2011 . 10.1017/S1431927611004132 [9] Zudhistira D...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 October 2011
DOI: 10.31399/asm.tb.mnm2.t53060315
EISBN: 978-1-62708-261-7
... (like metals). These elements tend to be semiconductors. Silicon is an important example. Other examples include boron, gallium, germanium, arsenic, antimony, tellurium, polonium, and astatine. Silicon (Si) Gallium (Ga) Germanium (Ge) Uranium (U) Vanadium (V) Magnetic Alloys...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 July 2009
DOI: 10.31399/asm.tb.bcp.t52230179
EISBN: 978-1-62708-298-3
...) 15.10 Beryllium-Gallium (Be-Ga) 15.11 Beryllium-Germanium (Be-Ge) 15.12 Beryllium-Lithium (Be-Li) 15.13 Beryllium-Magnesium (Be-Mg) 15.14 Beryllium-Molybdenum (Be-Mo) 15.15 Beryllium-Sodium (Be-Na) 15.16 Beryllium-Nickel (Be-Ni) 15.17 Beryllium-Niobium (Be-Nb) 15.18 Beryllium...
Book Chapter

Series: ASM Technical Books
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.tb.ems.t53730037
EISBN: 978-1-62708-283-9
... temperatures, conductivity depends on thermal excitation of donor or acceptor levels. Near room temperature, there is saturation. At high temperatures, intrinsic conduction prevails. Source: Ref 4.1 . The effect of group III elements (aluminum, gallium, indium) is similar. It takes very little thermal...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 October 2011
DOI: 10.31399/asm.tb.mnm2.t53060469
EISBN: 978-1-62708-261-7
... 0.0410 9 86.0 Europlum 822 1529 5.253 0.033 0.0421 26 91.0 Gadolinium 1311 3273 7.898 0.02 0.055 4 131.0 Gallium 29.8 2205 (a) 5.904 0.098 (a) 0.089 18.3 13 (a) Germanium 937.4 2830 5.32 0.14 0.077 5.75 89,000 (a) (b) Gold 1064 2860 19.3 0.70 0.0308...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 September 2008
DOI: 10.31399/asm.tb.fahtsc.t51130541
EISBN: 978-1-62708-284-6
... 6.4–18 Pure Gallium (Ga) 22 12 Manganese (Mn) 12–22 6.9–12 4xxx series wrought aluminum silicon 22 12 Pure Calcium (Ca) 21–24 12–13 7xxx series wrought aluminum zinc 22–24 12–13 3xxx series wrought aluminum manganese 23 13 8xx.x series cast aluminum tin 23 13...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110379
EISBN: 978-1-62708-247-1
...+BCl3 50-200 No 180 no no 5-10000 Aluminum Gallium Arsenide (AlGaAs) SiCl4+BCl3 +Ar 50-200 0-300W 5 yes yes PR (7:1) SiN (25:1) 10000 BPSG Cl2+BCl3 50-200 No 180 yes yes 5-10000 Cadmium Telluride, and other II-VI’s H2 + CH4+ Ar 6-150 0-300 20 yes yes PR (15:1) CSiN...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110673
EISBN: 978-1-62708-247-1
... 1960’s, we have a bewildering array of technologies, such as complementary metal oxide semiconductor (CMOS) circuits, BiCMOS circuits, gallium arsenide circuits, indium phosphide circuits, silicon carbide transistors, gallium nitride diodes, complex heterojunction structures, and microelectromechanical...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110461
EISBN: 978-1-62708-247-1
... ion beam (FIB) instrument based procedures have become popular because of requirement to precisely thin the sample at specific failing site. In a FIB, a focused beam of gallium ions is used to ablate material around the failing site in a controlled manner. Advanced FIB instruments equipped...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 June 1988
DOI: 10.31399/asm.tb.eihdca.t65220281
EISBN: 978-1-62708-341-6
.... This crystal is thicker at the sides than in the middle, which constitutes a mechanically stronger shape. In processing of germanium at 950 °C (1740 °F), the material is generally carried through the coil in a carbon susceptor or boat. During zone refining of silicon (or gallium arsenide), however...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 January 2017
DOI: 10.31399/asm.tb.sccmpe2.t55090341
EISBN: 978-1-62708-266-2
... , 1988 , p 392 – 402 14.13 White G.S. , Freiman S.W. , and Wilson A.M. , Indentation Determination of Crack Growth Parameters in Gallium Arsenide , J. Am. Ceram. Soc. , Vol 74 , 1991 , p 419 – 421 10.1111/j.1151-2916.1991.tb06898.x 14.14 Fuller E.R. Jr. , Lawn...
Book Chapter

Series: ASM Technical Books
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.tb.ems.t53730011
EISBN: 978-1-62708-283-9
..., freezing causes a volume decrease of 1 to 6%. However, there are a few materials (water, silicon, germanium, bismuth, gallium, etc.) that have packing in the solid state that is not dense and that actually expands when they solidify. Freezing starts at the outside of a casting, where the temperature...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 June 1988
DOI: 10.31399/asm.tb.eihdca.t65220241
EISBN: 978-1-62708-341-6
.... This receptor acts as insulation to reduce the losses from the susceptor to the atmosphere. Typical uses for susceptors at high temperatures occur in the semiconductor and fiber-optic industries where silicon, germanium, gallium arsenide, zirconia, etc. are heated to high temperatures. These materials have...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110010
EISBN: 978-1-62708-247-1
... such as cracks or delamination caused by the polishing process, the samples can be potted in some form of epoxy or resin. A focused ion beam (FIB) tool is routinely used to cross section failure analysis units. High energy gallium, iodine, or xenon ions are generated and rastered across a grounded sample...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110244
EISBN: 978-1-62708-247-1
Series: ASM Technical Books
Publisher: ASM International
Published: 01 January 2015
DOI: 10.31399/asm.tb.spsp2.t54410001
EISBN: 978-1-62708-265-5
... bulk samples in Focused Ion Beam (FIB) instruments that use Liquid Metal Ion Sources (LMIS) of gallium to remove and thin specimens for examination in TEM ( Ref 1.7 ). More recently, scanning electron microscopes have been developed to characterize variations in crystal orientations between...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 January 2015
DOI: 10.31399/asm.tb.tpmpa.t54480141
EISBN: 978-1-62708-318-8
.... Fig. 7.1 Partial phase diagram of the alpha-stabilized system. The alpha-stabilizing elements are aluminum, germanium, gallium, carbon, oxygen, and nitrogen. Fig. 7.29 Ti-14Al-21Nb bar. SEM micrograph shows equiaxed Ti 3 Al phase and an acicular Ti 3 Al + beta phase after processing near...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2001
DOI: 10.31399/asm.tb.aub.t61170351
EISBN: 978-1-62708-297-6
... Cerium Chromium Cobalt Copper Copper-Magnesium Copper-Magnesium plus Other Elements Copper and Minor Additions Gallium Hydrogen Indium Iron Lead Lithium Magnesium Magnesium-Manganese Magnesium-Silicide Manganese Mercury Molybdenum Nickel Niobium...