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frequency
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Image
Published: 01 June 1983
Figure 3.12 Transmission of a Fabry-Perot etalon vs. frequency showing laser frequency and change in rf sideband frequency to maintain resonance with thermal expansion.
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Image
Published: 01 August 2005
Fig. 5.63 Schematic influence of loading frequency on fatigue crack growth for three classes of environments. (a) Little or no effect of frequency, as in vacuum, inert gas, or air. (b) Fatigue crack growth increases with decreasing frequency, as in methanol. (c) Cyclic stress-corrosion
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Image
Published: 01 August 2005
Fig. 5.70 Three-dimensional representation of effects of frequency and temperature on fatigue crack growth rate in air. Source: Ref 5.85
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in Mechanical Behavior of Nonmetallic Materials
> Mechanics and Mechanisms of Fracture: An Introduction
Published: 01 August 2005
Fig. 7.17 Effect of cyclic frequency on fatigue crack growth rates in (a) PS and (b) PC. Source: Ref 7.25
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Image
Published: 01 November 2019
Figure 33 This is a thermal infrared image of a GaAs radio frequency amplifier. The circuit isn’t powered and there is no external illumination. The detected infrared is all from the IC and all of the contrast is due to emissivity differences. The metal lines and pads emit much less infrared
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in Acoustic Microscopy of Semiconductor Packages
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 12 Image obtained with transducer T1. Received transducer frequency was measured at 75 MHz.
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Image
in Acoustic Microscopy of Semiconductor Packages
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 35 Using signal amplitude for focus determination of high frequency transducers can be misleading. A 180 MHz transducer was positioned over a flip chip at the proper pulse-echo focus position. It was then moved through the focus, closer to the die. The out-of-focus position produces
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Image
in Acoustic Microscopy of Semiconductor Packages
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 36 Using signal amplitude for focus determination of high frequency transducers can be misleading. One workaround is to perform a high digital resolution focus series such as shown here. The numbers refer to the front surface reflection water path time of flight. For this die thinned
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Image
in Acoustic Microscopy of Semiconductor Packages
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 39 A bump anomaly detected by high-frequency PE-SAM (A: arrow). A slight shift in the data gate produces a SAM image that reveals cracking just outside the bump perimeter (B: arrow), confirmed in an SEM cross-section (C: arrow).
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Image
in Acoustic Microscopy of Semiconductor Packages
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 41 Optical (A) and high frequency PE-SAM (B) image comparison shows SAM capability for three types of defects. A Broken bump (1) and massive solder bridging (3) are clear in the SAM image. Solder bumps of reduced size (2) are not detected by SAM. The “edge effect” phenomenon, which
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in Fault Isolation Using Time Domain Reflectometry, Electro Optical Terahertz Pulse Reflectometry and Time Domain Transmissometry
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 10 Effect of increased frequency on the propagation of the signal [14] .
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in 3D Hot-Spot Localization by Lock-in Thermography
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 3 Schematic of a stacked die device (top). The phase shift to frequency characteristic (bottom) is calculated and measured enabling a fingerprinting of the defect site related to the die level [4] , [5] .
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in Laser Voltage Probing of Integrated Circuits: Implementation and Impact
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 11 Relative Intensity Noise (RIN) vs. frequency for a super-luminescent diode (SLD), a laser source (HSL), and a cooled high-power incoherent light source (cHIL). Measurements were acquired at 1.3um. Figure has been reproduced with kind permission from Hamamatsu Photonics.
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in Overview of Wafer-level Electrical Failure Analysis Process for Accelerated Yield Engineering
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 13 (a) (c) Reflected laser image and (b) (d) frequency map signals on random digital logic of a 28 nm technology device. (a) and (b) are performed on a water-cooled tester; (c) and (d) are performed on an air-cooled tester. Bounding boxes indicate scan cells locations
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Image
Published: 01 December 1984
Figure 6-12 Arithmetic frequency histogram of the random intercept measurements of the duplex grain structure shown in Fig. 6-11 .
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Image
Published: 01 December 1984
Figure 6-13 Logarithmic frequency distribution curve of the random intercept measurements of the duplex grain structure shown in Fig. 6-11 .
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Published: 01 December 1984
Figure 6-25 Frequency histogram of shape factors measured on flake, compacted, and nodular graphite samples.
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Published: 01 September 2008
Fig. 2 Typical power-frequency regions of induction heat treatment applications. Source: Ref 15 , 19
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Published: 01 September 2008
Fig. 11 Induction heating system for gear wheel heating by double frequency (medium/high). Source: Ref 27
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Published: 01 September 2008
Fig. 35 Influence of high-frequency generator on selection of power density and heating time with given thickness of surface induction-hardened layer. Source: Ref 2 , 20
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