This chapter provides perspective on the physical dimensions associated with the microstructure of steel and the instruments that reveal grain size, morphology, phase distributions, crystal defects, and chemical composition, from which properties and behaviors derive. The chapter also reviews the definitions and classifications used to identify and differentiate commercial steels, including the AISI/SAE and UNS designation systems.

With the commercialization of heavier and lighter ion beams, adoption of focused ion beam (FIB) use for analysis of challenging regions of interest (ROI) has grown. In this chapter, the authors focus on highlighting commercially available and complementary FIB technologies and their implementation challenges and application trends.

This chapter discusses the use of electron microscopy in metallographic analysis. It explains how electrons interact with metals and how these interactions can be harnessed to produce two- and three-dimensional images of metal surfaces and generate crystallographic and compositional data as well. It discusses the basic design and operating principles of scanning electron microscopes, transmission electron microscopes, and scanning transmission electron microscopes and how they are typically used. It describes the additional information contained in backscattered electrons and emitted x-rays and the methods used to access it, namely wavelength and energy dispersive spectroscopy and electron backscattering diffraction techniques. It also describes the role of focused ion beam milling in sample preparation and provides information on atom probes, atomic force microscopes, and laser scanning microscopes.

The first step in die-level failure analysis is to narrow the search to a specific circuit or transistor group. Then begins the post-isolation process which entails further localizing the defect, determining its electrical, physical, and chemical properties, and examining its microstructure in order to identify the root cause of failure. This chapter assesses the tools and techniques used for those purposes and the challenges brought on by continued transistor scaling, advanced 3D packages, and new IC architectures. The areas covered include sample preparation, nanoprobing, microscopy, FIB circuit edit, and scanning probe microscopy.

The ultimate goal of the failure analysis process is to find physical evidence that can identify the root cause of the failure. Transmission electron microscopy (TEM) has emerged as a powerful tool to characterize subtle defects. This article discusses the sample preparation procedures based on focused ion beam milling used for TEM sample preparation. It describes the principles behind commonly used imaging modes in semiconductor failure analysis and how these operation modes can be utilized to selectively maximize signal from specific beam-specimen interactions to generate useful information about the defect. Various elemental analysis techniques, namely energy dispersive spectroscopy, electron energy loss spectroscopy, and energy-filtered TEM, are described using examples encountered in failure analysis. The origin of different image contrast mechanisms, their interpretation, and analytical techniques for composition analysis are discussed. The article also provides information on the use of off-axis electron holography technique in failure analysis.

Several specialized instruments are available for the metallographer to use as tools to gather key information on the characteristics of the microstructure being analyzed. These include microscopes that use electrons as a source of illumination instead of light and x-ray diffraction equipment. This chapter describes how these instruments can be used to gather important information about a microstructure. The instruments covered include image analyzers, transmission electron microscopes, scanning electron microscopes, electron probe microanalyzers, scanning transmission electron microscopes, x-ray diffractometers, microhardness testers, and hot microhardness testers. A list of other instruments that are usually located in a research laboratory or specialized testing laboratory is also provided.

This chapter discusses the principles of scanning transmission electron microscopy (STEM) as implemented using conventional scanning electron microscopes (SEMs). It describes the pros and cons of low-energy imaging and diffraction, addresses basic hardware requirements, and provides information on imaging modes, detector positioning and alignment, and the effect of contrast reversal. It also discusses beam convergence and angular selectivity, the use of application-specific masks, and how to generate grain orientation maps for different material systems.

This article covers common techniques for surface characterization, including the modern scanning electron microscopy and methods for the chemical characterization of surfaces by Auger electron spectroscopy, X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry. The principles of surface analysis and some of the applications of the technique in polymer failure studies are also provided.

The complexity of semiconductor chips and their packages has continuously challenged the known methods to analyze them. With larger laminates and the inclusion of multiple stacked die, methods to analyze modern semiconductor products are being pushed toward their limits to support these 2.5D and 3D packages. This article focuses on these methods of fault isolation, non-destructive imaging, and destructive techniques through an iterative process for failure analysis of complex packages.

There are several analytical methods available that can be used in-line on whole wafers as well as off-line on de-processed products that are returned from the field. These techniques are surface analytical techniques that can be used to characterize the bulk of the material. The main six methods used in semiconductor industry are: Auger spectroscopy, dynamic secondary ion mass spectroscopy, time of flight static secondary ion mass spectroscopy (ToF-SIMS), X-ray photoelectron spectroscopy, scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDX), and transmission electron microscope-EDX. This review specifically addresses ToF-SIMS and describes some typical examples of the application of Auger and SEM-EDX.

Moore's Law has driven many degree circuit features below the resolving capability of optical microscopy. Yet the optical microscope remains a valuable tool in failure analysis. This article describes the physics governing resolution and useful techniques for extracting the small details. It begins with the basic microscope column and construction. The article discusses microscope adjustments, brightfield and darkfield illumination, and microscope concepts important to liquid crystal techniques. It also discusses solid immersion lenses, infrared and ultraviolet microscopy and concludes with laser microscopy techniques such as thermal induced voltage alteration and external induced voltage alteration.

As semiconductor feature sizes have shrunk, the technology needed to encapsulate modern integrated circuits has expanded. Due to the various industry changes, package failure analyses are becoming much more challenging; a systematic approach is therefore critical. This article proposes a package failure analysis flow for analyzing open and short failures. The flow begins with a review of data on how the device failed and how it was processed. Next, non-destructive techniques are performed to document the condition of the as-received units. The techniques discussed are external optical inspection, X-ray inspection, scanning acoustic microscopy, infrared (IR) microscopy, and electrical verification. The article discusses various fault isolation techniques to tackle the wide array of failure signatures, namely IR lock-in thermography, magnetic current imaging, time domain reflectometry, and electro-optical terahertz pulse reflectometry. The final step is the step-by-step inspection and deprocessing stage that begins once the defect has been imaged.

After the fault-tree, a failure-cause identification method has identified potential failure causes and the failure analysis team has prepared a failure mode assessment and assignment (FMA&A). The team knows specifically what to search for when examining components and subassemblies from the failed system. There are numerous techniques and technologies available for examining and analyzing components and subassemblies, which are categorized as follows: optical approaches, dimensional inspection and related approaches, nondestructive test approaches, mechanical and environmental approaches, and chemical and composition analysis for assessing material characteristics. This chapter is a detailed account of the working principle and the steps involved in these techniques and technologies.

This chapter assesses the potential impact of neural networks on package-level failure analysis, the challenges presented by next-generation semiconductor packages, and the measures that can be taken to maximize FA equipment uptime and throughput. It presents examples showing how neural networks have been trained to detect and classify PCB defects, improve signal-to-noise ratios in SEM images, recognize wafer failure patterns, and predict failure modes. It explains how new packaging strategies, particularly stacking and disintegration, complicate fault isolation and evaluates the ability of various imaging methods to locate defects in die stacks. It also presents best practices for sample preparation, inspection, and navigation and offers suggestions for improving the reliability and service life of tools.

Scanning Probe Microscope (SPM) has an increasing important role in the development of nanoscale semiconductor technologies. This article presents a detailed discussion on various SPM techniques including Atomic Force Microscopy (AFM), Scanning Kelvin Probe Microscopy, Scanning Capacitance Microscopy, Scanning Spreading Resistance Microscopy, Conductive-AFM, Magnetic Force Microscopy, Scanning Surface Photo Voltage Microscopy, and Scanning Microwave Impedance Microscopy. An overview of each SPM technique is given along with examples of how each is used in the development of novel technologies, the monitoring of manufacturing processes, and the failure analysis of nanoscale semiconductor devices.

This chapter provides a comprehensive overview over all phenomena related to Voltage Contrast (VC) mechanisms in SEM and FIB. The multiple advantages, possibilities, and limits of active and passive VC failure localization are systemized and discussed. The knowledge of all facts influencing the VC generation (capacitance, leakage, doping, and circuitry) is very helpful for successful failure localization.

This chapter elucidates the indispensable role of characterization in the development of cold-sprayed coatings and illustrates some of the common processes used during coatings development. Emphasis is placed on the advanced microstructural characterization techniques that are used in high-pressure cold spray coating characterization, including residual-stress characterization. The chapter includes some preliminary screening of tool hardness and bond adhesion strength, as well as a distinction between surface and bulk characterization techniques and their importance for cold spray coatings. The techniques covered are optical microscopy, X-Ray diffraction, scanning electron microscopy, focused ion beam machining, electron probe microanalysis, transmission electron microscopy, and electron backscattered diffraction. The techniques also include electron channeling contrast imaging, X-Ray photoelectron spectroscopy, X-ray fluorescence, Auger electron spectroscopy, Raman spectroscopy, oxygen analysis, and nanoindentation.

Education and training play an important role if the failure analyst is to be successful in his or her work. This article discusses the history of training activities in the failure/product analysis discipline and describes where this area is heading. It provides information on three areas of education and training that should be given to the analyst for him or her to be successful developing and fielding modern semiconductor components: analysis process, technology, and technique training.

This chapter describes surface modification processes that go beyond conventional heat treatments, including plasma nitriding, plasma carburizing, low-pressure carburizing, ion implantation, physical and chemical vapor deposition, salt bath coating, and transformation hardening via high-energy laser and electron beams. The chapter compares methods and includes several example applications.