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fault isolation
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in Overview of Wafer-level Electrical Failure Analysis Process for Accelerated Yield Engineering
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Image
in Overview of Wafer-level Electrical Failure Analysis Process for Accelerated Yield Engineering
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110111
EISBN: 978-1-62708-247-1
... Abstract Magnetic field imaging (MFI), generally understood as mapping the magnetic field of a region or object of interest using magnetic sensors, has been used for fault isolation (FI) in microelectronic circuit failure analysis for almost two decades. Developments in 3D magnetic field...
Abstract
Magnetic field imaging (MFI), generally understood as mapping the magnetic field of a region or object of interest using magnetic sensors, has been used for fault isolation (FI) in microelectronic circuit failure analysis for almost two decades. Developments in 3D magnetic field analysis have proven the validity of using MFI for 3D FI and 3D current mapping. This article briefly discusses the fundamentals of the technique, paying special attention to critical capabilities like sensitivity and resolution, limitations of the standard technique, sensor requirements and, in particular, the solution to the 3D problem, along with examples of its application to real failures in devices.
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110132
EISBN: 978-1-62708-247-1
... and limitations of these techniques (TDR, EOTPR, and combo TDR/TDT) are summarized and compared. electrical connectors electro optical terahertz pulse reflectometry fault isolation semiconductor packages telegraph lines time domain reflectometry time domain transmissometry twisted cables...
Abstract
Time-domain based characterization methods, mainly time-domain reflectometry (TDR) and time-domain transmissometry (TDT), have been used to locate faults in twisted cables, telegraph lines, and connectors in the electrical and telecommunication industry. This article provides a brief review of conventional TDR and its application limitations to advanced packages in semiconductor industry. The article introduces electro optical terahertz pulse reflectometry (EOTPR) and discusses how its improvements of using high frequency impulse signal addressed application challenges and quickly made it a well-adopted tool in the industry. The third part of this article introduces a new method which combines impulse signal and the TDT concept, and discusses a combo TDR and TDT method. Cases studies and application notes are shared and discussed for each technique. Application benefits and limitations of these techniques (TDR, EOTPR, and combo TDR/TDT) are summarized and compared.
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110323
EISBN: 978-1-62708-247-1
.... backside nano-probing techniques electron beam probing fault isolation techniques silicon transistors transmission electron microscope Substrate side silicon removal methods are presented that enable backside fault isolation of semiconductor devices. These methods do not require great skill...
Abstract
This article presents methods that enable one to consistently, uniformly and quickly remove substrate silicon from units without imparting damage to the structure of interest. It provides examples of electron beam probing and backside nano-probing techniques. The electron beam probing techniques are E-beam Logic State Imaging, Electron-beam Signal Image Mapping, and E-beam Device Perturbation. Backside nano-probing techniques discussed include: Electron Beam Absorbed Current, Electron Beam Induced Resistance Change, four terminal resistance measurements, resistive gate defect identification, and circuit editing. The article also presents methods to prepare electron beam probing samples where some remaining silicon is required for the transistor functions and transmission electron microscope samples from units where the substrate silicon has been partially or completely removed.
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110550
EISBN: 978-1-62708-247-1
... these 2.5D and 3D packages. This article focuses on these methods of fault isolation, non-destructive imaging, and destructive techniques through an iterative process for failure analysis of complex packages. 2.5D packaging 3D packaging destructive techniques failure analysis fault isolation non...
Abstract
The complexity of semiconductor chips and their packages has continuously challenged the known methods to analyze them. With larger laminates and the inclusion of multiple stacked die, methods to analyze modern semiconductor products are being pushed toward their limits to support these 2.5D and 3D packages. This article focuses on these methods of fault isolation, non-destructive imaging, and destructive techniques through an iterative process for failure analysis of complex packages.
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110010
EISBN: 978-1-62708-247-1
... inspection, X-ray inspection, scanning acoustic microscopy, infrared (IR) microscopy, and electrical verification. The article discusses various fault isolation techniques to tackle the wide array of failure signatures, namely IR lock-in thermography, magnetic current imaging, time domain reflectometry...
Abstract
As semiconductor feature sizes have shrunk, the technology needed to encapsulate modern integrated circuits has expanded. Due to the various industry changes, package failure analyses are becoming much more challenging; a systematic approach is therefore critical. This article proposes a package failure analysis flow for analyzing open and short failures. The flow begins with a review of data on how the device failed and how it was processed. Next, non-destructive techniques are performed to document the condition of the as-received units. The techniques discussed are external optical inspection, X-ray inspection, scanning acoustic microscopy, infrared (IR) microscopy, and electrical verification. The article discusses various fault isolation techniques to tackle the wide array of failure signatures, namely IR lock-in thermography, magnetic current imaging, time domain reflectometry, and electro-optical terahertz pulse reflectometry. The final step is the step-by-step inspection and deprocessing stage that begins once the defect has been imaged.
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110025
EISBN: 978-1-62708-247-1
...-destructive localization techniques. The techniques considered for advanced fault isolation are magnetic current imaging for shorts and opens; infrared thermography for electrical shorts; time-domain-reflectometry for shorts and opens; scanning acoustic microscopy; and 2D/3D X-Ray microscopy. The individual...
Abstract
In embedded systems, the separation between system level, board level, and individual component level failure analysis is slowly disappearing. In order to localize the initial defect area, prepare the sample for root cause analysis, and image the exact root cause, the overall functionality has to be maintained during the process. This leads to the requirement of adding additional techniques that help isolate and image defects that are buried deeply within the board structure. This article demonstrates an approach of advanced board level failure analysis by using several non-destructive localization techniques. The techniques considered for advanced fault isolation are magnetic current imaging for shorts and opens; infrared thermography for electrical shorts; time-domain-reflectometry for shorts and opens; scanning acoustic microscopy; and 2D/3D X-Ray microscopy. The individual methods and their operational principles are introduced along with case studies that will show the value of using them on board level defect analysis.
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110228
EISBN: 978-1-62708-247-1
... Abstract Diagnosing the root cause of a failure is particularly challenging if the symptom of the failure is not consistently observable. This article focuses on Laser Assisted Device Alteration/Soft Defect Localization (LADA/SDL), a global fault isolation technique, for detecting such failures...
Abstract
Diagnosing the root cause of a failure is particularly challenging if the symptom of the failure is not consistently observable. This article focuses on Laser Assisted Device Alteration/Soft Defect Localization (LADA/SDL), a global fault isolation technique, for detecting such failures. The discussion begins with a section describing the three steps in LADA/SDL analysis setup: create the test loop with the fail flag and loop trigger, select the laser dwell time, and select the shmoo bias point. An overview of LADA/SDL workflow is then presented followed by a brief section on time-resolved LADA. The closing pages of the article consider in detail SDL laser interaction physics and LADA laser interaction physics.
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110244
EISBN: 978-1-62708-247-1
... theory, providing information on electro-optical effects and free-carrier effects. It then focuses on commercially available continuous wave LVP systems. Alternative optoelectronic imaging and probing technologies for fault isolation, namely frequency mapping and laser voltage tracing, are also discussed...
Abstract
Laser Voltage Probing (LVP) is a key enabling technology that has matured into a well-established and essential analytical optical technique that is crucial for observing and evaluating internal circuit activity. This article begins by providing an overview on LVP history and LVP theory, providing information on electro-optical effects and free-carrier effects. It then focuses on commercially available continuous wave LVP systems. Alternative optoelectronic imaging and probing technologies for fault isolation, namely frequency mapping and laser voltage tracing, are also discussed. The subsequent section provides information on the use of Visible Laser Probing. The article closes with some common LVP observations/considerations and limitations and future work concerning LVP.
Image
in 2.5D and 3D Packaging Failure Analysis Techniques
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 9 Cross-sectional view of a 2.5D packaged module. The image attached here is just prior to reaching the solder bump and micropillar center for further fault isolation.
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Image
Published: 01 November 2019
Figure 1 With the introduction of copper metallization, the number of metal layers greatly increased, the spacing between the metallization has decreased, and Low-K dielectric replaced BPSG making the construction of microprobe pads for fault isolation very difficult.
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Image
in 2.5D and 3D Packaging Failure Analysis Techniques
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 6 (a) Removing the top chip disconnects the chip-chip test chain for further electrical fault isolation. (b) Removing the top chips to analyze the interposer net might remove the defect if it exists on a top chip. The emission on the one top chip might indicate a defect on that portion
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Image
in LADA and SDL: Powerful Techniques for Marginal Failures
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 29 LADA and TR-LADA images of a critical signal in a clock buffer on a 28-nm node device, using a 2.45NA SIL on a commercial optical fault isolation tool. The transistor associated with the data path cannot be identified even with the SIL. In this case, TR-LADA was used to reduce
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Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110262
EISBN: 978-1-62708-247-1
... the need for CAD-based FA techniques to isolate defects in ICs. Electrical Fault Isolation (EFI) becomes more and more complex with additional levels of interconnects, smaller feature sizes, and higher transistor densities in modern semiconductor devices. These challenges increase FA cycle time...
Abstract
Over the revolutionary era of semiconductor technology, Computer-Aided Design Navigation (CADNav) tools have played an increasingly critical role in silicon debug and failure analysis (FA) in efforts to improve manufacturing yield while reducing time-to-market for integrated circuit (IC) products. This article encompasses the key principles of CADNav for various aspects of semiconductor FA and its importance for improved yield and profitability. An overview of the required input data and formats are described for both IC and package devices, along with key considerations and best practices recommended for fast fault localization, accurate root cause analysis, FA equipment utilization, efficient cross-team collaboration, and database management. Challenges with an FA lab ecosystem are addressed by providing an integrated database and software platform that enable design layout and schematic analysis in the FA lab for quick and accurate navigation and cross-tool collaboration.
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110016
EISBN: 978-1-62708-247-1
... for subsequent fault isolation work. For the more recent CSPs in WLCSP (Wafer Level CSP) form, handling of these bare-die-like devices creates new difficulties for the failure analysts in performing routine failure analysis work using conventional FA tools. These are just a few examples of challenges that can...
Abstract
Since the introduction of chip scale packages (CSPs) in the early 90s, they have continuously increased their market share due to their advantages of small form factor, cost effectiveness and PCB optimization. The reduced package size brings challenges in performing failure analysis. This article provides an overview of CSPs and their classification as well as their advantages and applications, and reveals some of the challenges in performing failure analysis on CSPs, particularly for CSPs in special package configurations such as stacked die multi-chip-packages (MCPs) and wafer level CSPs (WLCSPs). The discussion covers special requirements of CSPs such as precision decapsulation for fine ball grid array packages, accessing the failing die for MCP packages, and careful handling for WLCSP. Solutions and best practices are shared on how to overcome these challenges. The article also presents a few case studies to demonstrate how failure analysis work on CSPs can be successfully completed.
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110001
EISBN: 978-1-62708-247-1
... type, common laboratory bench analyzers is sufficient to reveal the anomaly as well. Fault localization (FI) then interrogates the device using localization techniques, typically using photon or laser-based techniques, to isolate possible fail sites. Once the suspected locations are identified...
Abstract
This article introduces the wafer-level fault localization failure analysis (FA) process flow for an accelerated yield ramp-up of integrated circuits. It discusses the primary design considerations of a fault localization system with an emphasis on complex tester-based applications. The article presents examples that demonstrate the benefits of the enhanced wafer-level FA process. It also introduces the setup of the wafer-level fault localization system. The application of the wafer-level FA process on a 22 nm technology device failing memory test is studied and some common design limitations and their implications are discussed. The article presents a case study and finally introduces a different value-add application flow capitalizing on the wafer-level fault localization system.
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110101
EISBN: 978-1-62708-247-1
... to the user, which segments of the net could have the open, and which segments can be assumed defect free. Intel presented a method [37] to isolate interconnects opens by extending the stuck-at fault model to create a net fault model. It was shown that interconnect opens to could be isolated to single...
Abstract
In this overview of diagnosis of scan logic and diagnosis driven failure analysis, the authors explore the world of diagnosis of digital semiconductors devices. After shortly outlining the technology behind diagnosis, the main part of this article describes key improvements to the basic diagnosis tools, discussing their merits for the failure analysis engineer. The article also describes the various requirements and other considerations that typically need to be taken into account to set up a full working scan diagnosis system. It summarizes the principles of design with embedded compression technologies. Finally, several successful industrial applications of diagnosis are presented.
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110180
EISBN: 978-1-62708-247-1
... Abstract Photon emission (PE) is one of the major optical techniques for contactless isolation of functional faults in integrated circuits (ICs) in full electrical operation. This article describes the fundamental mechanisms of PE in silicon based ICs. It presents the opportunities...
Abstract
Photon emission (PE) is one of the major optical techniques for contactless isolation of functional faults in integrated circuits (ICs) in full electrical operation. This article describes the fundamental mechanisms of PE in silicon based ICs. It presents the opportunities of contactless characterization for the most important electronic device, the MOS - Field Effect Transistor, the heart of ICs and their basic digital element, the CMOS inverter. The article discusses the specification and selection of detectors for proper PE applications. The main topics are image resolution, sensitivity, and spectral range of the detectors. The article also discusses the value and application of spectral information in the PE signal. It describes state of the art IC technologies. Finally, the article discusses the applications of PE in ICs and also I/O devices, integrated bipolar transistors in BiCMOS technologies, and parasitic bipolar effects like latch up.
Book Chapter
Book: Systems Failure Analysis
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2009
DOI: 10.31399/asm.tb.sfa.t52780035
EISBN: 978-1-62708-268-6
... of things that can induce the top undesired event is a major fault-tree analysis advantage. All other analysis techniques focus on specific component failures in isolation. These other analysis techniques do not identify the effects of combinations of equipment failures, human errors, and normal conditions...
Abstract
Fault-tree analysis is a graphical technique that identifies all events and combinations of events that can produce an undesired event. This chapter emphasizes several fault-tree analysis concepts, examining with examples how all three categories of charting symbols (events, gates, and transfer symbols) come together to generate a fault-tree analysis.