Magnetic field imaging (MFI), generally understood as mapping the magnetic field of a region or object of interest using magnetic sensors, has been used for fault isolation (FI) in microelectronic circuit failure analysis for almost two decades. Developments in 3D magnetic field analysis have proven the validity of using MFI for 3D FI and 3D current mapping. This article briefly discusses the fundamentals of the technique, paying special attention to critical capabilities like sensitivity and resolution, limitations of the standard technique, sensor requirements and, in particular, the solution to the 3D problem, along with examples of its application to real failures in devices.

Time-domain based characterization methods, mainly time-domain reflectometry (TDR) and time-domain transmissometry (TDT), have been used to locate faults in twisted cables, telegraph lines, and connectors in the electrical and telecommunication industry. This article provides a brief review of conventional TDR and its application limitations to advanced packages in semiconductor industry. The article introduces electro optical terahertz pulse reflectometry (EOTPR) and discusses how its improvements of using high frequency impulse signal addressed application challenges and quickly made it a well-adopted tool in the industry. The third part of this article introduces a new method which combines impulse signal and the TDT concept, and discusses a combo TDR and TDT method. Cases studies and application notes are shared and discussed for each technique. Application benefits and limitations of these techniques (TDR, EOTPR, and combo TDR/TDT) are summarized and compared.

This article presents methods that enable one to consistently, uniformly and quickly remove substrate silicon from units without imparting damage to the structure of interest. It provides examples of electron beam probing and backside nano-probing techniques. The electron beam probing techniques are E-beam Logic State Imaging, Electron-beam Signal Image Mapping, and E-beam Device Perturbation. Backside nano-probing techniques discussed include: Electron Beam Absorbed Current, Electron Beam Induced Resistance Change, four terminal resistance measurements, resistive gate defect identification, and circuit editing. The article also presents methods to prepare electron beam probing samples where some remaining silicon is required for the transistor functions and transmission electron microscope samples from units where the substrate silicon has been partially or completely removed.

In embedded systems, the separation between system level, board level, and individual component level failure analysis is slowly disappearing. In order to localize the initial defect area, prepare the sample for root cause analysis, and image the exact root cause, the overall functionality has to be maintained during the process. This leads to the requirement of adding additional techniques that help isolate and image defects that are buried deeply within the board structure. This article demonstrates an approach of advanced board level failure analysis by using several non-destructive localization techniques. The techniques considered for advanced fault isolation are magnetic current imaging for shorts and opens; infrared thermography for electrical shorts; time-domain-reflectometry for shorts and opens; scanning acoustic microscopy; and 2D/3D X-Ray microscopy. The individual methods and their operational principles are introduced along with case studies that will show the value of using them on board level defect analysis.

As semiconductor feature sizes have shrunk, the technology needed to encapsulate modern integrated circuits has expanded. Due to the various industry changes, package failure analyses are becoming much more challenging; a systematic approach is therefore critical. This article proposes a package failure analysis flow for analyzing open and short failures. The flow begins with a review of data on how the device failed and how it was processed. Next, non-destructive techniques are performed to document the condition of the as-received units. The techniques discussed are external optical inspection, X-ray inspection, scanning acoustic microscopy, infrared (IR) microscopy, and electrical verification. The article discusses various fault isolation techniques to tackle the wide array of failure signatures, namely IR lock-in thermography, magnetic current imaging, time domain reflectometry, and electro-optical terahertz pulse reflectometry. The final step is the step-by-step inspection and deprocessing stage that begins once the defect has been imaged.

Diagnosing the root cause of a failure is particularly challenging if the symptom of the failure is not consistently observable. This article focuses on Laser Assisted Device Alteration/Soft Defect Localization (LADA/SDL), a global fault isolation technique, for detecting such failures. The discussion begins with a section describing the three steps in LADA/SDL analysis setup: create the test loop with the fail flag and loop trigger, select the laser dwell time, and select the shmoo bias point. An overview of LADA/SDL workflow is then presented followed by a brief section on time-resolved LADA. The closing pages of the article consider in detail SDL laser interaction physics and LADA laser interaction physics.

Laser Voltage Probing (LVP) is a key enabling technology that has matured into a well-established and essential analytical optical technique that is crucial for observing and evaluating internal circuit activity. This article begins by providing an overview on LVP history and LVP theory, providing information on electro-optical effects and free-carrier effects. It then focuses on commercially available continuous wave LVP systems. Alternative optoelectronic imaging and probing technologies for fault isolation, namely frequency mapping and laser voltage tracing, are also discussed. The subsequent section provides information on the use of Visible Laser Probing. The article closes with some common LVP observations/considerations and limitations and future work concerning LVP.

The complexity of semiconductor chips and their packages has continuously challenged the known methods to analyze them. With larger laminates and the inclusion of multiple stacked die, methods to analyze modern semiconductor products are being pushed toward their limits to support these 2.5D and 3D packages. This article focuses on these methods of fault isolation, non-destructive imaging, and destructive techniques through an iterative process for failure analysis of complex packages.

Photon emission (PE) is one of the major optical techniques for contactless isolation of functional faults in integrated circuits (ICs) in full electrical operation. This article describes the fundamental mechanisms of PE in silicon based ICs. It presents the opportunities of contactless characterization for the most important electronic device, the MOS - Field Effect Transistor, the heart of ICs and their basic digital element, the CMOS inverter. The article discusses the specification and selection of detectors for proper PE applications. The main topics are image resolution, sensitivity, and spectral range of the detectors. The article also discusses the value and application of spectral information in the PE signal. It describes state of the art IC technologies. Finally, the article discusses the applications of PE in ICs and also I/O devices, integrated bipolar transistors in BiCMOS technologies, and parasitic bipolar effects like latch up.

Over the revolutionary era of semiconductor technology, Computer-Aided Design Navigation (CADNav) tools have played an increasingly critical role in silicon debug and failure analysis (FA) in efforts to improve manufacturing yield while reducing time-to-market for integrated circuit (IC) products. This article encompasses the key principles of CADNav for various aspects of semiconductor FA and its importance for improved yield and profitability. An overview of the required input data and formats are described for both IC and package devices, along with key considerations and best practices recommended for fast fault localization, accurate root cause analysis, FA equipment utilization, efficient cross-team collaboration, and database management. Challenges with an FA lab ecosystem are addressed by providing an integrated database and software platform that enable design layout and schematic analysis in the FA lab for quick and accurate navigation and cross-tool collaboration.

Since the introduction of chip scale packages (CSPs) in the early 90s, they have continuously increased their market share due to their advantages of small form factor, cost effectiveness and PCB optimization. The reduced package size brings challenges in performing failure analysis. This article provides an overview of CSPs and their classification as well as their advantages and applications, and reveals some of the challenges in performing failure analysis on CSPs, particularly for CSPs in special package configurations such as stacked die multi-chip-packages (MCPs) and wafer level CSPs (WLCSPs). The discussion covers special requirements of CSPs such as precision decapsulation for fine ball grid array packages, accessing the failing die for MCP packages, and careful handling for WLCSP. Solutions and best practices are shared on how to overcome these challenges. The article also presents a few case studies to demonstrate how failure analysis work on CSPs can be successfully completed.

This article introduces the wafer-level fault localization failure analysis (FA) process flow for an accelerated yield ramp-up of integrated circuits. It discusses the primary design considerations of a fault localization system with an emphasis on complex tester-based applications. The article presents examples that demonstrate the benefits of the enhanced wafer-level FA process. It also introduces the setup of the wafer-level fault localization system. The application of the wafer-level FA process on a 22 nm technology device failing memory test is studied and some common design limitations and their implications are discussed. The article presents a case study and finally introduces a different value-add application flow capitalizing on the wafer-level fault localization system.

In this overview of diagnosis of scan logic and diagnosis driven failure analysis, the authors explore the world of diagnosis of digital semiconductors devices. After shortly outlining the technology behind diagnosis, the main part of this article describes key improvements to the basic diagnosis tools, discussing their merits for the failure analysis engineer. The article also describes the various requirements and other considerations that typically need to be taken into account to set up a full working scan diagnosis system. It summarizes the principles of design with embedded compression technologies. Finally, several successful industrial applications of diagnosis are presented.

This article addresses the ancillary issues regarding the nanoprobing and characterization of transistors, probing copper metallization layers, and the various imaging techniques. The discussion includes several characterization examples of known transistor failure types, namely four probe transistor characterization, two probe transistor characterization, and probing and characterizing metallization issues. The imaging techniques discussed are those that are specific to atomic force nanoprober or scanning electron microscope based tools. They are current contrast imaging, scanning capacitance imaging, e-beam absorbed current imaging, e-beam induced current imaging, e-beam induced resistance change imaging, and active voltage contrast imaging.

Semiconductor memories are superb drivers for process yield and reliability improvement because of their highly structured architecture and use of aggressive layout rules. This combination provides outstanding failure signature analysis possibilities for the entire design, manufacturing, and test process. This article discusses five key disciplines of the signature analysis process that need to be orchestrated within the organization: design for test practices, test floor data collection methodology, post-test data analysis tools, root cause theorization, and physical failure analysis strategies.

Scanning Probe Microscope (SPM) has an increasing important role in the development of nanoscale semiconductor technologies. This article presents a detailed discussion on various SPM techniques including Atomic Force Microscopy (AFM), Scanning Kelvin Probe Microscopy, Scanning Capacitance Microscopy, Scanning Spreading Resistance Microscopy, Conductive-AFM, Magnetic Force Microscopy, Scanning Surface Photo Voltage Microscopy, and Scanning Microwave Impedance Microscopy. An overview of each SPM technique is given along with examples of how each is used in the development of novel technologies, the monitoring of manufacturing processes, and the failure analysis of nanoscale semiconductor devices.

Fault-tree analysis is a graphical technique that identifies all events and combinations of events that can produce an undesired event. This chapter emphasizes several fault-tree analysis concepts, examining with examples how all three categories of charting symbols (events, gates, and transfer symbols) come together to generate a fault-tree analysis.

This chapter provides a comprehensive overview over all phenomena related to Voltage Contrast (VC) mechanisms in SEM and FIB. The multiple advantages, possibilities, and limits of active and passive VC failure localization are systemized and discussed. The knowledge of all facts influencing the VC generation (capacitance, leakage, doping, and circuitry) is very helpful for successful failure localization.

Passive components can be broadly divided into capacitors, resistors, and inductors. Failure analysis of these components helps determine the root cause and improve the overall quality and reliability of the electronic systems. This article describes different failure analysis approaches used for these components. It discusses different types of capacitors along with their constructions and failure modes. The types include tantalum, aluminum electrolytic, multi-layered ceramics, film, and super capacitors. The article then provides a discussion on the two common types of inductors, namely, common mode choke coil and surface mount powder choke coil.

This article reviews the basic physics behind active photon injection for local photocurrent generation in silicon and thermal laser stimulation along with standard scanning optical microscopy failure analysis tools. The discussion includes several models for understanding the local thermal effects on metallic lines, junctions, and complete devices. The article also provides a description and case study examples of multiple photocurrent and thermal injection techniques. The photocurrent examples are based on Optical Beam-Induced Current and Light-Induced Voltage Alteration. The thermal stimulus examples are Optical Beam-Induced Resistance Change/Thermally-Induced Voltage Alteration and Seebeck Effect Imaging. Lastly, the article discusses the application of solid immersion lenses to improve spatial resolution.