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fault isolation

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Published: 01 November 2019
Figure 3 Prober configuration for wafer-level testing and dynamic fault isolation. More
Image
Published: 01 November 2019
Figure 4 Static fault isolation setup on a wafer-level scanning optical microscope. More
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110111
EISBN: 978-1-62708-247-1
... Abstract Magnetic field imaging (MFI), generally understood as mapping the magnetic field of a region or object of interest using magnetic sensors, has been used for fault isolation (FI) in microelectronic circuit failure analysis for almost two decades. Developments in 3D magnetic field...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110132
EISBN: 978-1-62708-247-1
... and limitations of these techniques (TDR, EOTPR, and combo TDR/TDT) are summarized and compared. electrical connectors electro optical terahertz pulse reflectometry fault isolation semiconductor packages telegraph lines time domain reflectometry time domain transmissometry twisted cables...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110323
EISBN: 978-1-62708-247-1
.... backside nano-probing techniques electron beam probing fault isolation techniques silicon transistors transmission electron microscope Substrate side silicon removal methods are presented that enable backside fault isolation of semiconductor devices. These methods do not require great skill...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110550
EISBN: 978-1-62708-247-1
... these 2.5D and 3D packages. This article focuses on these methods of fault isolation, non-destructive imaging, and destructive techniques through an iterative process for failure analysis of complex packages. 2.5D packaging 3D packaging destructive techniques failure analysis fault isolation non...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110010
EISBN: 978-1-62708-247-1
... inspection, X-ray inspection, scanning acoustic microscopy, infrared (IR) microscopy, and electrical verification. The article discusses various fault isolation techniques to tackle the wide array of failure signatures, namely IR lock-in thermography, magnetic current imaging, time domain reflectometry...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110025
EISBN: 978-1-62708-247-1
...-destructive localization techniques. The techniques considered for advanced fault isolation are magnetic current imaging for shorts and opens; infrared thermography for electrical shorts; time-domain-reflectometry for shorts and opens; scanning acoustic microscopy; and 2D/3D X-Ray microscopy. The individual...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110228
EISBN: 978-1-62708-247-1
... Abstract Diagnosing the root cause of a failure is particularly challenging if the symptom of the failure is not consistently observable. This article focuses on Laser Assisted Device Alteration/Soft Defect Localization (LADA/SDL), a global fault isolation technique, for detecting such failures...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110244
EISBN: 978-1-62708-247-1
... theory, providing information on electro-optical effects and free-carrier effects. It then focuses on commercially available continuous wave LVP systems. Alternative optoelectronic imaging and probing technologies for fault isolation, namely frequency mapping and laser voltage tracing, are also discussed...
Image
Published: 01 November 2019
Figure 9 Cross-sectional view of a 2.5D packaged module. The image attached here is just prior to reaching the solder bump and micropillar center for further fault isolation. More
Image
Published: 01 November 2019
Figure 1 With the introduction of copper metallization, the number of metal layers greatly increased, the spacing between the metallization has decreased, and Low-K dielectric replaced BPSG making the construction of microprobe pads for fault isolation very difficult. More
Image
Published: 01 November 2019
Figure 6 (a) Removing the top chip disconnects the chip-chip test chain for further electrical fault isolation. (b) Removing the top chips to analyze the interposer net might remove the defect if it exists on a top chip. The emission on the one top chip might indicate a defect on that portion More
Image
Published: 01 November 2019
Figure 29 LADA and TR-LADA images of a critical signal in a clock buffer on a 28-nm node device, using a 2.45NA SIL on a commercial optical fault isolation tool. The transistor associated with the data path cannot be identified even with the SIL. In this case, TR-LADA was used to reduce More
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110262
EISBN: 978-1-62708-247-1
... the need for CAD-based FA techniques to isolate defects in ICs. Electrical Fault Isolation (EFI) becomes more and more complex with additional levels of interconnects, smaller feature sizes, and higher transistor densities in modern semiconductor devices. These challenges increase FA cycle time...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110016
EISBN: 978-1-62708-247-1
... for subsequent fault isolation work. For the more recent CSPs in WLCSP (Wafer Level CSP) form, handling of these bare-die-like devices creates new difficulties for the failure analysts in performing routine failure analysis work using conventional FA tools. These are just a few examples of challenges that can...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110001
EISBN: 978-1-62708-247-1
... type, common laboratory bench analyzers is sufficient to reveal the anomaly as well. Fault localization (FI) then interrogates the device using localization techniques, typically using photon or laser-based techniques, to isolate possible fail sites. Once the suspected locations are identified...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110101
EISBN: 978-1-62708-247-1
... to the user, which segments of the net could have the open, and which segments can be assumed defect free. Intel presented a method [37] to isolate interconnects opens by extending the stuck-at fault model to create a net fault model. It was shown that interconnect opens to could be isolated to single...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110180
EISBN: 978-1-62708-247-1
... Abstract Photon emission (PE) is one of the major optical techniques for contactless isolation of functional faults in integrated circuits (ICs) in full electrical operation. This article describes the fundamental mechanisms of PE in silicon based ICs. It presents the opportunities...
Book Chapter

Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2009
DOI: 10.31399/asm.tb.sfa.t52780035
EISBN: 978-1-62708-268-6
... of things that can induce the top undesired event is a major fault-tree analysis advantage. All other analysis techniques focus on specific component failures in isolation. These other analysis techniques do not identify the effects of combinations of equipment failures, human errors, and normal conditions...