This article provides an overview of the most common micro-analytical technique in the failure analysis laboratory: energy dispersive X-ray spectroscopy (EDS). It discusses the general characteristics, advantages, and disadvantages of some of the X-ray detectors attached to the scanning electron microscope chamber including the lithium-drifted EDS detector, silicon drift detector (SDD), and wavelength dispersive X-ray detector. The article then provides information on qualitative and quantitative X-ray analysis programs followed by a discussion on EDS elemental mapping. The discussion includes a comparison of scanning transmission electron microscope-EDS elemental mapping and mapping with an SDD. A brief section is devoted to the discussion on the artifacts that occur during X-ray mapping.

The ultimate goal of the failure analysis process is to find physical evidence that can identify the root cause of the failure. Transmission electron microscopy (TEM) has emerged as a powerful tool to characterize subtle defects. This article discusses the sample preparation procedures based on focused ion beam milling used for TEM sample preparation. It describes the principles behind commonly used imaging modes in semiconductor failure analysis and how these operation modes can be utilized to selectively maximize signal from specific beam-specimen interactions to generate useful information about the defect. Various elemental analysis techniques, namely energy dispersive spectroscopy, electron energy loss spectroscopy, and energy-filtered TEM, are described using examples encountered in failure analysis. The origin of different image contrast mechanisms, their interpretation, and analytical techniques for composition analysis are discussed. The article also provides information on the use of off-axis electron holography technique in failure analysis.

There are several analytical methods available that can be used in-line on whole wafers as well as off-line on de-processed products that are returned from the field. These techniques are surface analytical techniques that can be used to characterize the bulk of the material. The main six methods used in semiconductor industry are: Auger spectroscopy, dynamic secondary ion mass spectroscopy, time of flight static secondary ion mass spectroscopy (ToF-SIMS), X-ray photoelectron spectroscopy, scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDX), and transmission electron microscope-EDX. This review specifically addresses ToF-SIMS and describes some typical examples of the application of Auger and SEM-EDX.

The overall chemical composition of metals and alloys is most commonly determined by x-ray fluorescence (XRF) and optical emission spectroscopy (OES). High-temperature combustion and inert gas fusion methods are typically used to analyze dissolved gases (oxygen, nitrogen, and hydrogen) and, in some cases, carbon and sulfur in metals. This chapter discusses the operating principles of XRF, OES, combustion and inert gas fusion analysis, surface analysis, and scanning auger microprobe analysis. The details of equipment set-up used for chemical composition analysis as well as the capabilities of related techniques of these methods are also covered.

This article provides an overview of how to use the scanning electron microscope (SEM) for imaging integrated circuits. The discussion covers the principles of operation and practical techniques of the SEM. The techniques include sample mounting, sample preparation, sputter coating, sample tilt and image composition, focus and astigmatism correction, dynamic focus and image correction, raster alignment, and adjusting brightness and contrast. The article also provides information on achieving ultra-high resolution in the SEM. It concludes with information on the general characteristics and applications of environmental SEM.

As semiconductor feature sizes have shrunk, the technology needed to encapsulate modern integrated circuits has expanded. Due to the various industry changes, package failure analyses are becoming much more challenging; a systematic approach is therefore critical. This article proposes a package failure analysis flow for analyzing open and short failures. The flow begins with a review of data on how the device failed and how it was processed. Next, non-destructive techniques are performed to document the condition of the as-received units. The techniques discussed are external optical inspection, X-ray inspection, scanning acoustic microscopy, infrared (IR) microscopy, and electrical verification. The article discusses various fault isolation techniques to tackle the wide array of failure signatures, namely IR lock-in thermography, magnetic current imaging, time domain reflectometry, and electro-optical terahertz pulse reflectometry. The final step is the step-by-step inspection and deprocessing stage that begins once the defect has been imaged.

Most of the counterfeit parts detected in the electronics industry are either novel or surplus parts or salvaged scrap parts. This article begins by discussing the type of parts used to create counterfeits. It discusses the three most commonly used methods used by counterfeiters to create counterfeits. These include relabeling, refurbishing, and repackaging. The article presents a systematic inspection methodology that can be applied for detecting signs of possible part modifications. The methodology consists of external visual inspection, marking permanency tests, and X-ray inspection followed by material evaluation and characterization. These processes are typically followed by evaluation of the packages to identify defects, degradations, and failure mechanisms that are caused by the processes (e.g., cleaning, solder dipping of leads, reballing) used in creating counterfeit parts.

Semiconductor memories are superb drivers for process yield and reliability improvement because of their highly structured architecture and use of aggressive layout rules. This combination provides outstanding failure signature analysis possibilities for the entire design, manufacturing, and test process. This article discusses five key disciplines of the signature analysis process that need to be orchestrated within the organization: design for test practices, test floor data collection methodology, post-test data analysis tools, root cause theorization, and physical failure analysis strategies.

This chapter describes three approaches for 3D hot-spot localization of thermally active defects by lock-in thermography (LIT). In the first section, phase-shift analysis for analyzing stacked die packages is performed. The second example employs defocusing sequences for the localization of resistive electrical shorts in 3D architectures, and the third operates in cross sectional LIT mode to investigate defects in the insulation liner of Through Silicon Vias. All three approaches allow for a precise localization of thermally active defects in all three spatial dimensions to guide subsequent high-resolution physical analyses.

After the fault-tree, a failure-cause identification method has identified potential failure causes and the failure analysis team has prepared a failure mode assessment and assignment (FMA&A). The team knows specifically what to search for when examining components and subassemblies from the failed system. There are numerous techniques and technologies available for examining and analyzing components and subassemblies, which are categorized as follows: optical approaches, dimensional inspection and related approaches, nondestructive test approaches, mechanical and environmental approaches, and chemical and composition analysis for assessing material characteristics. This chapter is a detailed account of the working principle and the steps involved in these techniques and technologies.

A systematic procedure for minimizing risks involved in heat treated steel components requires a combination of metallurgical failure analysis and fitness for service with respect to safety and reliability based on risk analysis. This chapter begins with an overview of heat treat processing of steels. This is followed by sections on various aspects of heat treatment design and heat treating practices for minimizing distortion. Influence of design, steel grade, and condition is then illustrated in the examples of failures due to heat treatment. A procedure is analyzed to improve the performance of the design process of a component. A heat-transfer model, coupling with a phase transformation model, a thermomechanical model, and a thermochemical model, is also considered. The chapter further provides information on the failure aspects of and heat treatment procedures applied to welded components. It ends with a section on risk-based approach applicable to heat treated steel components.

This chapter discusses some of the methods and measurements used to construct phase diagrams. It explains how cooling curves were widely used to determine phase boundaries, and how equilibrated alloys examined under controlled heating and cooling provide information for constructing isothermal and vertical sections as well as liquid projections. It also explains how diffusion couples provide a window into local equilibria and identifies typical phase diagram construction errors along with problems stemming from phase-boundary curvatures and congruent transformations.

Contaminants can be a cause of numerous types of system failures. There are numerous techniques for confirming contaminant presence. When the presence of a contaminant is suspected, the failure analysis team must find and eliminate the contaminant source, which can be obvious or quite subtle. This chapter summarizes a few commonly encountered contaminant sources to stimulate the reader's thinking about potential contaminant sources. A case study of titanium component washing at Litton Lasers is presented to illustrate how the presence of contaminants leads to a system failure.

With the commercialization of heavier and lighter ion beams, adoption of focused ion beam (FIB) use for analysis of challenging regions of interest (ROI) has grown. In this chapter, the authors focus on highlighting commercially available and complementary FIB technologies and their implementation challenges and application trends.

This chapter discusses the various failure analysis techniques for microelectromechanical systems (MEMS), focusing on conventional semiconductor manufacturing processes and materials. The discussion begins with a section describing the advances in integration and packaging technologies that have helped drive the further proliferation of MEMS devices in the marketplace. It then shows some examples of the top MEMS applications and quickly discusses the fundamentals of their workings. The next section describes common failure mechanisms along with techniques and challenges in identifying them. The chapter also provides information on the testing of MEMS devices. It covers the two common challenges in sample preparation for MEMS: decapping, or opening up the package, without disturbing the MEMS elements; and removing MEMS elements for analysis. Finally, the chapter discusses the aspects of failure analysis techniques that are of particular interest to MEMS.

This chapter briefly outlines some of the basic aspects of failure analysis, describing some of the basic steps and major concerns in conducting a failure analysis. A brief review of failure types from fracture, distortion, wear-assisted failure, and environmentally assisted failure (corrosion) is also provided.

This chapter presents various case histories that illustrate a variety of failure mechanisms experienced by the high-strength steel components in aerospace applications. The components covered are catapult holdback bar, AISI 420 stainless steel roll pin, main landing gear (MLG) lever, inboard flap hinge bolt, nose landing gear piston axle, multiple-leg aircraft-handling sling, aircraft hoist sling, internal spur gear, and MLG axle. In addition, the chapter provides information on full-scale fatigue testing, nondestructive testing, and failure analysis of fin attach bolts.