This article provides an overview of the most common micro-analytical technique in the failure analysis laboratory: energy dispersive X-ray spectroscopy (EDS). It discusses the general characteristics, advantages, and disadvantages of some of the X-ray detectors attached to the scanning electron microscope chamber including the lithium-drifted EDS detector, silicon drift detector (SDD), and wavelength dispersive X-ray detector. The article then provides information on qualitative and quantitative X-ray analysis programs followed by a discussion on EDS elemental mapping. The discussion includes a comparison of scanning transmission electron microscope-EDS elemental mapping and mapping with an SDD. A brief section is devoted to the discussion on the artifacts that occur during X-ray mapping.

Magnetic field imaging (MFI), generally understood as mapping the magnetic field of a region or object of interest using magnetic sensors, has been used for fault isolation (FI) in microelectronic circuit failure analysis for almost two decades. Developments in 3D magnetic field analysis have proven the validity of using MFI for 3D FI and 3D current mapping. This article briefly discusses the fundamentals of the technique, paying special attention to critical capabilities like sensitivity and resolution, limitations of the standard technique, sensor requirements and, in particular, the solution to the 3D problem, along with examples of its application to real failures in devices.

This chapter discusses the various failure analysis techniques for microelectromechanical systems (MEMS), focusing on conventional semiconductor manufacturing processes and materials. The discussion begins with a section describing the advances in integration and packaging technologies that have helped drive the further proliferation of MEMS devices in the marketplace. It then shows some examples of the top MEMS applications and quickly discusses the fundamentals of their workings. The next section describes common failure mechanisms along with techniques and challenges in identifying them. The chapter also provides information on the testing of MEMS devices. It covers the two common challenges in sample preparation for MEMS: decapping, or opening up the package, without disturbing the MEMS elements; and removing MEMS elements for analysis. Finally, the chapter discusses the aspects of failure analysis techniques that are of particular interest to MEMS.

This article presents methods that enable one to consistently, uniformly and quickly remove substrate silicon from units without imparting damage to the structure of interest. It provides examples of electron beam probing and backside nano-probing techniques. The electron beam probing techniques are E-beam Logic State Imaging, Electron-beam Signal Image Mapping, and E-beam Device Perturbation. Backside nano-probing techniques discussed include: Electron Beam Absorbed Current, Electron Beam Induced Resistance Change, four terminal resistance measurements, resistive gate defect identification, and circuit editing. The article also presents methods to prepare electron beam probing samples where some remaining silicon is required for the transistor functions and transmission electron microscope samples from units where the substrate silicon has been partially or completely removed.

Laser Voltage Probing (LVP) is a key enabling technology that has matured into a well-established and essential analytical optical technique that is crucial for observing and evaluating internal circuit activity. This article begins by providing an overview on LVP history and LVP theory, providing information on electro-optical effects and free-carrier effects. It then focuses on commercially available continuous wave LVP systems. Alternative optoelectronic imaging and probing technologies for fault isolation, namely frequency mapping and laser voltage tracing, are also discussed. The subsequent section provides information on the use of Visible Laser Probing. The article closes with some common LVP observations/considerations and limitations and future work concerning LVP.

The ultimate goal of the failure analysis process is to find physical evidence that can identify the root cause of the failure. Transmission electron microscopy (TEM) has emerged as a powerful tool to characterize subtle defects. This article discusses the sample preparation procedures based on focused ion beam milling used for TEM sample preparation. It describes the principles behind commonly used imaging modes in semiconductor failure analysis and how these operation modes can be utilized to selectively maximize signal from specific beam-specimen interactions to generate useful information about the defect. Various elemental analysis techniques, namely energy dispersive spectroscopy, electron energy loss spectroscopy, and energy-filtered TEM, are described using examples encountered in failure analysis. The origin of different image contrast mechanisms, their interpretation, and analytical techniques for composition analysis are discussed. The article also provides information on the use of off-axis electron holography technique in failure analysis.

This chapter discusses the various factors pertinent to gravity permanent mold (GPM) castings, along with their advantages, limitations, and significance. The discussion covers the geometric factors, process and manufacturing elements, gating practices, and feeding principles of and pouring systems in GPM. The influences of mold coatings on GPM and low pressure permanent mold castings are described. The chapter also discusses various processes involved in the engineering of core boxes and cooling of GPM for casting integrity and cycle time control. It provides information on some of the processes involved in post-casting operations, namely de-coring and de-gating. The key design aspects for consideration in water quenching during the T6 heat treatment are reviewed. The chapter also provides information on two critical cycle events important in engineering at the manufacturing facility: tipper cycle planning and table or cell cycle planning.

This chapter addresses the concept of hardenability by first describing the basic hardening process for steel, starting with austenitization followed by quenching and tempering. The context also serves to clarify the difference between hardenability and hardness, which are often confused. Most of the information in the chapter is of a practical nature, covering application-oriented topics such as isothermal transformation (IT) and continuous transformation (CT) diagrams which are used to predict and control the rate of formation of ferrite, pearlite, and bainite. The chapter also discusses the effect of grain size and alloying elements and explains how Jominy end quench testing is used to evaluate the hardenability of steel.

The overall chemical composition of metals and alloys is most commonly determined by x-ray fluorescence (XRF) and optical emission spectroscopy (OES). High-temperature combustion and inert gas fusion methods are typically used to analyze dissolved gases (oxygen, nitrogen, and hydrogen) and, in some cases, carbon and sulfur in metals. This chapter discusses the operating principles of XRF, OES, combustion and inert gas fusion analysis, surface analysis, and scanning auger microprobe analysis. The details of equipment set-up used for chemical composition analysis as well as the capabilities of related techniques of these methods are also covered.

Metallurgy, as discussed in this chapter, focuses on phases normally encountered in stainless steels and their characteristics. This chapter describes the thermodynamics and the three basic phases of stainless steels: ferrite, austenite, and martensite. Formation of the principal intermetallic phases is also covered. In addition, the chapter provides information on carbides, nitrides, precipitation hardening, and inclusions.

Semiconductor memories are superb drivers for process yield and reliability improvement because of their highly structured architecture and use of aggressive layout rules. This combination provides outstanding failure signature analysis possibilities for the entire design, manufacturing, and test process. This article discusses five key disciplines of the signature analysis process that need to be orchestrated within the organization: design for test practices, test floor data collection methodology, post-test data analysis tools, root cause theorization, and physical failure analysis strategies.

This appendix provides a brief introduction to Thermo-Calc, explains what it is, and lists its uses. Instructions for accessing a demonstration version of the software are also provided.

This chapter reviews failure aspects of structural ferrous powder metallurgy (PM) parts, which form the bulk of the PM industry. The focus is on conventional PM technology of parts in the density range of 6 to 7.2 g/cc. The chapter briefly introduces the processing steps that are essential to understanding failure analysis of PM parts. This is followed by a section on case hardening of PM parts. The methods used for analyzing the failures are then discussed. Some case studies are given that illustrate different failures and the methods of prevention of these failures.

Steel is made by adding carbon to iron, producing a solid solution defined by its crystalline structure. This chapter discusses the effect of carbon composition and temperature on the types of structures, or phases, that form. Using detailed phase diagrams, it explains how low-carbon (hypoeutectoid) and high-carbon (hypereutectoid) steels are made, how they are classified, and how they compare. It also describes eutectoid steels which, at 0.77 wt% C, form a separate class noted for its microstructure.

This chapter discusses the use of nondestructive inspection methods, including visual, ultrasonic, radiographic, and thermographic techniques, and the types of flaws and damages they can reveal in composite parts and assemblies. It describes the basic principles behind each method along with best practices and procedures.

The hardenability of steel is governed almost entirely by the chemical composition (carbon and alloy content) at the austenitizing temperature and the austenite grain size at the moment of quenching. This article introduces the methods to evaluate hardenability and the factors that influence steel hardenability and selection. The discussion covers processes involved in Jominy end-quench test for evaluating hardenability. The effect of carbon on hardenability data and the effect of alloys on hardenability during quenching and on the tempering response (after hardening) are also discussed. In addition, the article provides information on the hardenability limits of H-steels after a note on hardenability correlation curves and Jominy equivalence charts.

There are several analytical methods available that can be used in-line on whole wafers as well as off-line on de-processed products that are returned from the field. These techniques are surface analytical techniques that can be used to characterize the bulk of the material. The main six methods used in semiconductor industry are: Auger spectroscopy, dynamic secondary ion mass spectroscopy, time of flight static secondary ion mass spectroscopy (ToF-SIMS), X-ray photoelectron spectroscopy, scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDX), and transmission electron microscope-EDX. This review specifically addresses ToF-SIMS and describes some typical examples of the application of Auger and SEM-EDX.

This chapter provides information on the structure, design aspects, mechanical properties, forming, machining, and corrosion resistance characteristics of duplex stainless steels. The different types of corrosion covered are general corrosion, pitting corrosion, crevice corrosion, and stress corrosion cracking.

This article provides an introduction to the dynamic random access memory (DRAM) operation with a focus to localization techniques of the defects combined with some physical failure analysis examples and case studies for memory array failures. It discusses the electrical measurement techniques for array failure analysis. The article then presents know-how-based analysis techniques of array failures by bitmap classification. The limits of bitmapping that lead to well-known localization techniques like thermally induced voltage alteration and optical beam induced resistance change are also discussed. The article concludes by providing information on soft defect localization techniques.

Superalloys tend to operate in environments where they are subjected to high-temperature corrosion, oxidation, and the erosive effects of hot gases. This chapter discusses the nature of these attacks and the effectiveness of various protection methods. It describes the primary forms of oxidation, the development of protective oxides, and the conditions associated with mixed gas corrosion and hot corrosion attack. It discusses oxidation and corrosion testing, the equipment used, and various ways to present the associated data. It describes the effect of gaseous oxidation on different alloys, discusses the formation of oxide scale in the presence of mixed gases, and explains how alloy composition contributes to oxide growth. The chapter discusses the underlying chemistry of hot corrosion, how to identify its effects, and how it progresses under various conditions. It also discusses protective coatings, including aluminide diffusion, overlay, and thermal barrier types, and how they perform in different environments based on their ability to tolerate strain.