This chapter discusses the use of electron microscopy in metallographic analysis. It explains how electrons interact with metals and how these interactions can be harnessed to produce two- and three-dimensional images of metal surfaces and generate crystallographic and compositional data as well. It discusses the basic design and operating principles of scanning electron microscopes, transmission electron microscopes, and scanning transmission electron microscopes and how they are typically used. It describes the additional information contained in backscattered electrons and emitted x-rays and the methods used to access it, namely wavelength and energy dispersive spectroscopy and electron backscattering diffraction techniques. It also describes the role of focused ion beam milling in sample preparation and provides information on atom probes, atomic force microscopes, and laser scanning microscopes.

This article provides an overview of how to use the scanning electron microscope (SEM) for imaging integrated circuits. The discussion covers the principles of operation and practical techniques of the SEM. The techniques include sample mounting, sample preparation, sputter coating, sample tilt and image composition, focus and astigmatism correction, dynamic focus and image correction, raster alignment, and adjusting brightness and contrast. The article also provides information on achieving ultra-high resolution in the SEM. It concludes with information on the general characteristics and applications of environmental SEM.

The ultimate goal of the failure analysis process is to find physical evidence that can identify the root cause of the failure. Transmission electron microscopy (TEM) has emerged as a powerful tool to characterize subtle defects. This article discusses the sample preparation procedures based on focused ion beam milling used for TEM sample preparation. It describes the principles behind commonly used imaging modes in semiconductor failure analysis and how these operation modes can be utilized to selectively maximize signal from specific beam-specimen interactions to generate useful information about the defect. Various elemental analysis techniques, namely energy dispersive spectroscopy, electron energy loss spectroscopy, and energy-filtered TEM, are described using examples encountered in failure analysis. The origin of different image contrast mechanisms, their interpretation, and analytical techniques for composition analysis are discussed. The article also provides information on the use of off-axis electron holography technique in failure analysis.

This chapter focuses on common failure characteristics exhibited by mechanical and electrical components. The topic is considered from two perspectives: one possibility is that the system failed because parts were nonconforming to drawing requirements and another possibility is that the system failed even though all parts in the system met their drawing requirements. The common failures discussed in this chapter include those associated with metallic components, composite materials, plastic components, ceramic components, and electrical and electronic components.

Electronics spans a number of devices, their configurations, and properties. A challenge is to identify those electronic subjects essential for failure analysis. This article reviews the normal operation and terminal characteristics of MOSFET. It describes the electronic behavior of bridges, opens, and parametric delay defects, which is essential for understanding the symptoms of a failing IC. These electronic principles are then applied to a CMOS failure analysis technique using a power supply signature analysis.

Most of the counterfeit parts detected in the electronics industry are either novel or surplus parts or salvaged scrap parts. This article begins by discussing the type of parts used to create counterfeits. It discusses the three most commonly used methods used by counterfeiters to create counterfeits. These include relabeling, refurbishing, and repackaging. The article presents a systematic inspection methodology that can be applied for detecting signs of possible part modifications. The methodology consists of external visual inspection, marking permanency tests, and X-ray inspection followed by material evaluation and characterization. These processes are typically followed by evaluation of the packages to identify defects, degradations, and failure mechanisms that are caused by the processes (e.g., cleaning, solder dipping of leads, reballing) used in creating counterfeit parts.