Search Results for electrical measurement

This article provides an introduction to the dynamic random access memory (DRAM) operation with a focus to localization techniques of the defects combined with some physical failure analysis examples and case studies for memory array failures. It discusses the electrical measurement techniques for array failure analysis. The article then presents know-how-based analysis techniques of array failures by bitmap classification. The limits of bitmapping that lead to well-known localization techniques like thermally induced voltage alteration and optical beam induced resistance change are also discussed. The article concludes by providing information on soft defect localization techniques.

In embedded systems, the separation between system level, board level, and individual component level failure analysis is slowly disappearing. In order to localize the initial defect area, prepare the sample for root cause analysis, and image the exact root cause, the overall functionality has to be maintained during the process. This leads to the requirement of adding additional techniques that help isolate and image defects that are buried deeply within the board structure. This article demonstrates an approach of advanced board level failure analysis by using several non-destructive localization techniques. The techniques considered for advanced fault isolation are magnetic current imaging for shorts and opens; infrared thermography for electrical shorts; time-domain-reflectometry for shorts and opens; scanning acoustic microscopy; and 2D/3D X-Ray microscopy. The individual methods and their operational principles are introduced along with case studies that will show the value of using them on board level defect analysis.

This chapter presents topics pertaining to resistance at cryogenic temperatures: measurement, the resistive mechanisms, and available data. The chapter also presents brief descriptions of the various mechanisms that are operative in producing resistance at low temperatures. The alloys discussed are the nondilute mixtures of metals. An introduction to low-temperature electrical properties of specific metals and alloys is included.

This chapter discusses the various failure analysis techniques for microelectromechanical systems (MEMS), focusing on conventional semiconductor manufacturing processes and materials. The discussion begins with a section describing the advances in integration and packaging technologies that have helped drive the further proliferation of MEMS devices in the marketplace. It then shows some examples of the top MEMS applications and quickly discusses the fundamentals of their workings. The next section describes common failure mechanisms along with techniques and challenges in identifying them. The chapter also provides information on the testing of MEMS devices. It covers the two common challenges in sample preparation for MEMS: decapping, or opening up the package, without disturbing the MEMS elements; and removing MEMS elements for analysis. Finally, the chapter discusses the aspects of failure analysis techniques that are of particular interest to MEMS.

This article discusses electrical testing and recommended procedures for determining the electrical properties of insulating materials, with particular emphasis on plastics. It describes the electrical characteristics of various forms of plastics and also presents definitions of the terms used in connection with testing and specifying plastics for electrical applications.

This chapter describes three approaches for 3D hot-spot localization of thermally active defects by lock-in thermography (LIT). In the first section, phase-shift analysis for analyzing stacked die packages is performed. The second example employs defocusing sequences for the localization of resistive electrical shorts in 3D architectures, and the third operates in cross sectional LIT mode to investigate defects in the insulation liner of Through Silicon Vias. All three approaches allow for a precise localization of thermally active defects in all three spatial dimensions to guide subsequent high-resolution physical analyses.

Critical process variables must be controlled to ensure uniform and repeatable heat-treating results. This chapter covers the subject of controlling the heat-treating process. All heat-treating equipment utilizes various sensors, timers, and other components to monitor and control the process utilizing various control methods. The chapter focuses on temperature control and measurement, including a discussion about thermocouples and devices for measuring thermal and electrical conductivity.

This article presents methods that enable one to consistently, uniformly and quickly remove substrate silicon from units without imparting damage to the structure of interest. It provides examples of electron beam probing and backside nano-probing techniques. The electron beam probing techniques are E-beam Logic State Imaging, Electron-beam Signal Image Mapping, and E-beam Device Perturbation. Backside nano-probing techniques discussed include: Electron Beam Absorbed Current, Electron Beam Induced Resistance Change, four terminal resistance measurements, resistive gate defect identification, and circuit editing. The article also presents methods to prepare electron beam probing samples where some remaining silicon is required for the transistor functions and transmission electron microscope samples from units where the substrate silicon has been partially or completely removed.

This chapter discusses three measurements parameters: temperature, strain, and magnetic field strength. It stresses the measurement of temperature because it is the primary variable in nearly all low-temperature material properties. The chapter contains information on methods and auxiliary materials. Areas of frequent concern, such as thermal contact, heat leak, thermal anchoring, thermal conductivity of greases, insulators, lead wires, ground loops, and feedthroughs are also reviewed. The chapter provides an overview and historical development of temperature scales because the practical use of all thermometers is associated with some approximation of the thermodynamic temperature scale. A short section is devoted to types of temperature measuring devices. The characteristics of commercially available resistance-type strain gauges at low temperatures are stressed.

Time-domain based characterization methods, mainly time-domain reflectometry (TDR) and time-domain transmissometry (TDT), have been used to locate faults in twisted cables, telegraph lines, and connectors in the electrical and telecommunication industry. This article provides a brief review of conventional TDR and its application limitations to advanced packages in semiconductor industry. The article introduces electro optical terahertz pulse reflectometry (EOTPR) and discusses how its improvements of using high frequency impulse signal addressed application challenges and quickly made it a well-adopted tool in the industry. The third part of this article introduces a new method which combines impulse signal and the TDT concept, and discusses a combo TDR and TDT method. Cases studies and application notes are shared and discussed for each technique. Application benefits and limitations of these techniques (TDR, EOTPR, and combo TDR/TDT) are summarized and compared.

This chapter provides a brief account of galvanic corrosion, which occurs when a metal or alloy is electrically coupled to another metal or conducting nonmetal in the same electrolyte. It begins by describing the galvanic series of metals and alloys useful for predicting galvanic relationships, followed by a brief section on polarization of metals or alloys. The effects of area, distance, and geometric shapes on galvanic-corrosion behavior are then discussed. Various alloys susceptible to galvanic corrosion are briefly reviewed. The chapter also discusses various modes of attack that lead to galvanic corrosion, along with methods for predicting and controlling galvanic corrosion.

This chapter discusses the selection, use, and integration of methods to control process variables in induction heating, including control of workpiece and processing temperature and materials handling systems. The discussion of temperature control includes a review of proportional controllers and heat-regulating devices. Integration of control functions is illustrated with examples related to heating of steel slabs, surface hardening of steel parts, vacuum induction melting for casting operations, and process optimization for electric-demand control. Distributed control within larger manufacturing systems is discussed. The chapter also covers nondestructive techniques for process control and methods for process simulation.