Search Results for electric field

Magnetic field imaging (MFI), generally understood as mapping the magnetic field of a region or object of interest using magnetic sensors, has been used for fault isolation (FI) in microelectronic circuit failure analysis for almost two decades. Developments in 3D magnetic field analysis have proven the validity of using MFI for 3D FI and 3D current mapping. This article briefly discusses the fundamentals of the technique, paying special attention to critical capabilities like sensitivity and resolution, limitations of the standard technique, sensor requirements and, in particular, the solution to the 3D problem, along with examples of its application to real failures in devices.

This chapter examines some of the behaviors that suit materials for electrical and electronic applications. It begins by explaining how charge carriers move in metals and semiconductors and how properties such as conductivity, mobility, and resistivity are derived. It discusses the significance of energy bands, intrinsic and extrinsic conduction, and the properties of compound semiconductors. It also covers semiconductor devices, including p-n junctions, light emitting diodes, transistors, and piezoelectric crystals.

In the Semiconductor I/C industry, it has been well documented that the proportion of factory and customer field returns attributed to device damage resulting from electrical over-stress (EOS) and electro-static discharge (ESD) can amount to 40 to 50%. This study entailed EOS and ESD simulation using a variety of models, namely the Human Body Model (HBM), the Charged Device Model (CDM) and the so-called Machine Model (MM), and then conducting electrical and physical failure analysis and comparing the results with documented analyses performed on customer field returns and factory failures. It is shown that a distinction can be made between EOS and ESD failures and between the characteristic failure signatures produced by the ESD models. The CDM physical failure location is at the input buffer and in the gate oxide, where as both HBM and MM failures occur mostly in the contacts at the input protection structures.

Photon emission (PE) is one of the major optical techniques for contactless isolation of functional faults in integrated circuits (ICs) in full electrical operation. This article describes the fundamental mechanisms of PE in silicon based ICs. It presents the opportunities of contactless characterization for the most important electronic device, the MOS - Field Effect Transistor, the heart of ICs and their basic digital element, the CMOS inverter. The article discusses the specification and selection of detectors for proper PE applications. The main topics are image resolution, sensitivity, and spectral range of the detectors. The article also discusses the value and application of spectral information in the PE signal. It describes state of the art IC technologies. Finally, the article discusses the applications of PE in ICs and also I/O devices, integrated bipolar transistors in BiCMOS technologies, and parasitic bipolar effects like latch up.

Transistors are the most important active structure of any semiconductor component. Performance characteristics of such devices within the specifications are key to ensuring proper functionality and long-term reliability of the product. In this article, a summary of the semiconductor technology from design to manufacturing and the characterization methods are discussed. The focus is on two prominent MOS structures: planar MOS device and FinFET device. The article covers the device parameters and device properties that determine the design criteria and the device tuning procedures. The discussion includes the effects of drain induced barrier lowering, velocity saturation, hot carrier degradation, and short channel on these devices.

The physical properties of a material are those properties that can be measured or characterized without the application of force and without changing material identity. This chapter discusses in detail the common physical properties of metals, namely density, electrical properties, thermal properties, magnetic properties, and optical properties. Some physical properties for a number of metals are given in a table.

Laser Voltage Probing (LVP) is a key enabling technology that has matured into a well-established and essential analytical optical technique that is crucial for observing and evaluating internal circuit activity. This article begins by providing an overview on LVP history and LVP theory, providing information on electro-optical effects and free-carrier effects. It then focuses on commercially available continuous wave LVP systems. Alternative optoelectronic imaging and probing technologies for fault isolation, namely frequency mapping and laser voltage tracing, are also discussed. The subsequent section provides information on the use of Visible Laser Probing. The article closes with some common LVP observations/considerations and limitations and future work concerning LVP.