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dynamic random access memory

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Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110499
EISBN: 978-1-62708-247-1
... Abstract This article provides an introduction to the dynamic random access memory (DRAM) operation with a focus to localization techniques of the defects combined with some physical failure analysis examples and case studies for memory array failures. It discusses the electrical measurement...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2023
DOI: 10.31399/asm.tb.edfatr.t56090155
EISBN: 978-1-62708-462-8
..., and interlayer dielectric (ILD) and high aspect ratio cross sectioning and imaging. Memory The memory market is segmented into three types of devices: Volatile (dominated by dynamic random access memory, or DRAM) Non-volatile (dominated by vertical NAND, VNAND) Emerging (magnetoresistive...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110485
EISBN: 978-1-62708-247-1
... and dopant images of Embedded Dynamic Random Access Memory (EDRAM) cells are shown. The cross section was polished such that the surface finish had a RMS Roughness (R q ) of <5 Å [11 , 12] . The small R q is critical in order to minimize noise in the data. The sample was oxidized [9] prior...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2023
DOI: 10.31399/asm.tb.edfatr.t56090021
EISBN: 978-1-62708-462-8
... (AP) with a dynamic random access (DRAM) package using a high-density redistribution layer (RDL) and TIV. InFO on substrate (InFO_oS) is another variant of InFO that features a higher-density 2/2 μm RDL line width/space to integrate multiple chiplets. This package technology features hybrid pitches...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2023
DOI: 10.31399/asm.tb.edfatr.t56090109
EISBN: 978-1-62708-462-8
... interactions. Continuous uniformity improvements will be needed. Advanced automation of PFIB delayering, including end-pointing, will also be needed for throughput and success rate. Fig. 5 Plasma FIB delayering of 14 nm FinFET devices in static random access memory (SRAM) array showing localized metal...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2023
DOI: 10.31399/asm.tb.edfatr.9781627084628
EISBN: 978-1-62708-462-8
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110634
EISBN: 978-1-62708-247-1
... applied in the IC industry, where technical issues that are causing methodology changes are emphasized. These include functional testing, structural testing, scan-based delay testing, built-in self-testing, memory testing, analog circuit testing, system-on-a-chip testing, and reliability testing. Trends...
Book Chapter

Series: ASM Technical Books
Publisher: ASM International
Published: 30 September 2023
DOI: 10.31399/asm.tb.stmflw.t59390456
EISBN: 978-1-62708-459-8
... are high enough to prevent dynamic recrystallization and if there are no second-phase particles that could initiate microcracks. This means that shear cannot take place in an infinitely narrow plane; instead, a more diffused primary shear zone is found ( Fig. 13.3 ). The chip becomes thicker...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 August 2005
DOI: 10.31399/asm.tb.horfi.t51180061
EISBN: 978-1-62708-256-3
... to support the theory or too much information and data have been collected that support a different theory. Now the fun begins. Random testing and evaluations begin on the residual pieces of the failure in an attempt to close in on the root cause. However, many of the samples have been destroyed...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 1984
DOI: 10.31399/asm.tb.mpp.9781627082600
EISBN: 978-1-62708-260-0
Series: ASM Technical Books
Publisher: ASM International
Published: 01 June 1983
DOI: 10.31399/asm.tb.mlt.9781627083485
EISBN: 978-1-62708-348-5
Series: ASM Technical Books
Publisher: ASM International
Published: 01 January 2017
DOI: 10.31399/asm.tb.sccmpe2.t55090367
EISBN: 978-1-62708-266-2
... specimens Dynamic loading Selection of test environments Special considerations for testing of weldments Interpretation of test results Most crucial to any SCC evaluation program are selection of an appropriate test method and interpretation of test results. 17.1 General State of the Art...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 1984
DOI: 10.31399/asm.tb.mpp.t67850060
EISBN: 978-1-62708-260-0
... are excessive. The location from which the test sample is taken is often chosen on the basis of convenience in sectioning. While random sampling is usually desirable from a statistical viewpoint, it is usually impractical, because the cutting operation would render the balance of the product unsalable. Even...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 March 2002
DOI: 10.31399/asm.tb.stg2.9781627082679
EISBN: 978-1-62708-267-9
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2000
DOI: 10.31399/asm.tb.ttg2.9781627082693
EISBN: 978-1-62708-269-3
Series: ASM Technical Books
Publisher: ASM International
Published: 01 September 2011
DOI: 10.31399/asm.tb.cfw.9781627083386
EISBN: 978-1-62708-338-6
Series: ASM Technical Books
Publisher: ASM International
Published: 30 April 2021
DOI: 10.31399/asm.tb.tpsfwea.9781627083232
EISBN: 978-1-62708-323-2
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2001
DOI: 10.31399/asm.tb.aub.9781627082976
EISBN: 978-1-62708-297-6