Semiconductor memories are superb drivers for process yield and reliability improvement because of their highly structured architecture and use of aggressive layout rules. This combination provides outstanding failure signature analysis possibilities for the entire design, manufacturing, and test process. This article discusses five key disciplines of the signature analysis process that need to be orchestrated within the organization: design for test practices, test floor data collection methodology, post-test data analysis tools, root cause theorization, and physical failure analysis strategies.

This chapter provides an overview of the possible mechanisms of failure for heat treated steel components and discusses the techniques for examining fractures, ductile and brittle failures, intergranular failure mechanisms, and fatigue. It begins with a description of the general sources of component failure. This is followed by a section on the stages of a failure analysis, which can proceed one after the other or occur at the same time. These stages of analysis are collection of background data, preliminary visual examination, nondestructive testing, selection and preservation of specimens, mechanical testing, macroexamination, microexamination, metallographic examination, determination of the fracture mechanism, chemical analysis, exemplar testing, and analysis and writing the report. The chapter ends with a discussion on various processes involved in the determination of the fracture mechanism.

This appendix is a collection of tables listing examples of published hardness conversion equations, approximate Rockwell B and C hardness conversion numbers for nonaustenitic steels, and equivalent hardness numbers for Brinell hardness numbers and Vickers (diamond pyramid) hardness numbers for steel.

This appendix identifies producers, suppliers, and service providers experienced with superalloy materials and applications. It also identifies potential sources of engineering information and property data.

This chapter presents an overview of microprocessor and application specific integrated circuit (IC) testing. It begins with a description of key industry trends that will impact how ICs will be tested in the future. Next, it provides a brief description of the most common tests applied in the IC industry, where technical issues that are causing methodology changes are emphasized. These include functional testing, structural testing, scan-based delay testing, built-in self-testing, memory testing, analog circuit testing, system-on-a-chip testing, and reliability testing. Trends discussed have driven the development of novel focus areas in test and the chapter discusses several of those areas, including test data volume containment, test power containment, and novel methods of defect-based test.

This chapter provides basic materials selection information for iron-nickel-, nickel-, and cobalt-base superalloys. It discusses mechanical and physical properties, the effect of service temperature, and the comparative strengths of wrought and cast product forms. It includes several large data tables along with reference information and a detailed application example based on the design of a gas turbine disk.

As semiconductor feature sizes have shrunk, the technology needed to encapsulate modern integrated circuits has expanded. Due to the various industry changes, package failure analyses are becoming much more challenging; a systematic approach is therefore critical. This article proposes a package failure analysis flow for analyzing open and short failures. The flow begins with a review of data on how the device failed and how it was processed. Next, non-destructive techniques are performed to document the condition of the as-received units. The techniques discussed are external optical inspection, X-ray inspection, scanning acoustic microscopy, infrared (IR) microscopy, and electrical verification. The article discusses various fault isolation techniques to tackle the wide array of failure signatures, namely IR lock-in thermography, magnetic current imaging, time domain reflectometry, and electro-optical terahertz pulse reflectometry. The final step is the step-by-step inspection and deprocessing stage that begins once the defect has been imaged.

Over the revolutionary era of semiconductor technology, Computer-Aided Design Navigation (CADNav) tools have played an increasingly critical role in silicon debug and failure analysis (FA) in efforts to improve manufacturing yield while reducing time-to-market for integrated circuit (IC) products. This article encompasses the key principles of CADNav for various aspects of semiconductor FA and its importance for improved yield and profitability. An overview of the required input data and formats are described for both IC and package devices, along with key considerations and best practices recommended for fast fault localization, accurate root cause analysis, FA equipment utilization, efficient cross-team collaboration, and database management. Challenges with an FA lab ecosystem are addressed by providing an integrated database and software platform that enable design layout and schematic analysis in the FA lab for quick and accurate navigation and cross-tool collaboration.

This chapter discusses the properties and processing characteristics of glass, aramid, carbon, and ultra-high molecular weight polyethylene fibers and related product forms, including woven fabrics, prepreg, and reinforced mats. It also includes a review of fiber terminology as well as physical and mechanical property data for commercially important high-strength fibers.

This chapter describes the molecular structures and chemical reactions associated with the production of thermoset and thermoplastic components. It compares and contrasts the mechanical properties of engineering plastics with those of metals, and explains how fillers and reinforcements affect impact and tensile strength, shrinkage, thermal expansion, and thermal conductivity. It examines the relationship between tensile modulus and temperature, provides thermal property data for selected plastics, and discusses the effect of chemical exposure, operating temperature, and residual stress. The chapter also includes a section on the uses of thermoplastic and thermosetting resins and provides information on fabrication processes and fastening and joining methods.

This chapter consists of three parts. The first part provides data and guidelines for selecting materials and processing routes. It compares the basic properties of metals, ceramics, and polymers, identifies important measures of performance, and discusses manufacturing processes and their compatibility with specific materials. The chapter then presents general guidelines for selecting lightweight materials, and concludes with a review of lightweight metals, plastics, and composites used in automotive applications.

Failure analysis can sometimes involve considerations of statistics and probability. This chapter reviews some of the basic types of statistical distributions in order to understand some basic principles in their use. The main focus is on the uses of the normal distribution, which is the most commonly used statistical distribution. The chapter also includes a section discussing the reliability and probability of passing.

With the commercialization of heavier and lighter ion beams, adoption of focused ion beam (FIB) use for analysis of challenging regions of interest (ROI) has grown. In this chapter, the authors focus on highlighting commercially available and complementary FIB technologies and their implementation challenges and application trends.

In this overview of diagnosis of scan logic and diagnosis driven failure analysis, the authors explore the world of diagnosis of digital semiconductors devices. After shortly outlining the technology behind diagnosis, the main part of this article describes key improvements to the basic diagnosis tools, discussing their merits for the failure analysis engineer. The article also describes the various requirements and other considerations that typically need to be taken into account to set up a full working scan diagnosis system. It summarizes the principles of design with embedded compression technologies. Finally, several successful industrial applications of diagnosis are presented.

Time-domain based characterization methods, mainly time-domain reflectometry (TDR) and time-domain transmissometry (TDT), have been used to locate faults in twisted cables, telegraph lines, and connectors in the electrical and telecommunication industry. This article provides a brief review of conventional TDR and its application limitations to advanced packages in semiconductor industry. The article introduces electro optical terahertz pulse reflectometry (EOTPR) and discusses how its improvements of using high frequency impulse signal addressed application challenges and quickly made it a well-adopted tool in the industry. The third part of this article introduces a new method which combines impulse signal and the TDT concept, and discusses a combo TDR and TDT method. Cases studies and application notes are shared and discussed for each technique. Application benefits and limitations of these techniques (TDR, EOTPR, and combo TDR/TDT) are summarized and compared.

Scanning Probe Microscope (SPM) has an increasing important role in the development of nanoscale semiconductor technologies. This article presents a detailed discussion on various SPM techniques including Atomic Force Microscopy (AFM), Scanning Kelvin Probe Microscopy, Scanning Capacitance Microscopy, Scanning Spreading Resistance Microscopy, Conductive-AFM, Magnetic Force Microscopy, Scanning Surface Photo Voltage Microscopy, and Scanning Microwave Impedance Microscopy. An overview of each SPM technique is given along with examples of how each is used in the development of novel technologies, the monitoring of manufacturing processes, and the failure analysis of nanoscale semiconductor devices.

A successful heat treating operation is determined by the ability to satisfy the customer's quality requirements consistently and economically. This chapter reviews the steps that are important to produce quality parts in heat treating with a brief practical explanation of each. The steps include selecting proper material and design of the part being treated; determining whether the process is capable of heat treatment; using statistical process control, control charting, and in-process inspection and testing; and applying statistical quality control and final testing (sampling) to verify the results.

Circuit edit has been instrumental to the development of focused ion beam (FIB) systems. FIB tools for advanced circuit edit play a major role in the validation of design and manufacture. This chapter begins with an overview of value, role, and unique capabilities of FIB circuit edit tools for first silicon debug. The etching capabilities of circuit edit FIB tools are then discussed, providing information on chemistry assisted etching in silicon oxides and low-k dielectrics. The chapter also discusses the requirements and procedures involved in edit operation: high aspect ratio milling, endpointing, and cutting copper. It then provides an introduction to FIB metal/conductor deposition and FIB dielectric deposition. Edit design rules that can facilitate prototype production from first silicon are also provided. The chapter concludes with a discussion on future trends in circuit edit technology.

After the failure analysis team hypothesizes failure causes, prepares a failure mode assessment and assignment, and evaluates all potential failure causes, it may find in some cases that several causes are still suspect but cannot be confirmed. In this situation, an experiment is necessary to confirm or rule out suspected causes. This chapter discusses two predominant methods for doing this, namely analysis of variance (ANOVA) and Taguchi methods (a more powerful technique based on ANOVA).