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crystal growth

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Published: 01 December 2016
Fig. 1.27 Twin-plane reentrant edge (TPRE) mechanism of crystal growth: subsequent stages of formation of silicon crystal in the shape of plate. (a) Crystal of two twins, closure of twins due to ridge formation. (b) Crystal with two twins, reentrant groove on the surface. Source: Ref 35 , 38 More
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Published: 01 November 2010
Fig. 12.4 Fiber nucleation of spherulitic crystal growth in a high-temperature, lightly cross-linked thermoplastic-matrix composite. Micrographs were taken from ultrathin sections of the unidirectional carbon fiber composite. (a) Sectioned through the thickness and perpendicular to the fiber More
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Published: 01 January 2015
Fig. 2.1 Smooth, planar crystal growth is observed at the solid-liquid interface when liquid metals are not undercooled. Growth of long individual grains and protuberances into the liquid are prevented whenever the liquid is above the freezing point. Arrows indicate the direction of heat flow More
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Published: 01 December 2016
Fig. 1.23 Geometry of the silicon crystal during growth. (a) Skeleton crystal. (b) Equilibrium regular octahedron. Source: Ref 36 More
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Published: 01 December 1996
Fig. 6-1 (a) Schematic illustration of the growth of a dendritic crystal. (b) Photograph of a large, 9 inch long, dendrite which formed in a steel. (Photograph from A. Sauver, The Metallography and Heat Treatment of Iron and Steel , 4th edition, The University Press, Cambridge, London (1935 More
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Published: 01 December 2016
Fig. 1.26 Growth mechanism of faceted crystal in a shape of the octahedron; steps and spiral steps of screw dislocation. Source: Ref 4 More
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2016
DOI: 10.31399/asm.tb.ascaam.t59190001
EISBN: 978-1-62708-296-9
... and massive particles of the silicon. At the next stage, these phases constitute the binary (αAl + Si) eutectic. The morphology of the particular crystals is formed during their growth from the liquid determined by solid-liquid (S-L) interface topography and thereby the mechanism of joining of atoms from...
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Published: 01 December 2008
Fig. 5.15 Adhesion growth and lateral growth of crystals. (Stable faces have small mobility, but unstable faces have large mobility). (a) Adhesion growth ( κ ≈ 1). (b) Lateral growth ( κ ≪ 1). (c) The growth of an anisotropic crystal More
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Published: 01 December 1996
Fig. 6-2 Schematic illustration of the growth of dendritic crystals in a liquid. (C.R. Brooks, Heat Treatment, Structure and Properties of Non-Ferrous Alloys , American Society for Metals, Metals Park, Ohio (1986), Ref 2 ) More
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Published: 01 December 2016
Fig. 1.24 Map of morphology of primary silicon crystals, an effect of the growth rate anisotropy for particular crystal planes ( V a = V 100 , V b = V 111 , V c = edge). Source: Ref 38 , 39 More
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2016
DOI: 10.31399/asm.tb.ascaam.9781627082969
EISBN: 978-1-62708-296-9
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2010
DOI: 10.31399/asm.tb.omfrc.t53030211
EISBN: 978-1-62708-349-2
... and growth of crystals in many thermoplastic-matrix composites. While the degree of crystallinity can be determined from differential scanning calorimetry, x-ray analysis, or density measurements, these analytical methods provide little, if any, information on the origin and microstructure...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2016
DOI: 10.31399/asm.tb.ascaam.t59190173
EISBN: 978-1-62708-296-9
... V volume ν R growth rate of solid phase (crystal), Δ x /Δ t V v volume fraction of phase ν T cooling rate, Δ T /Δ t θ wetting angle ξ crystallographic factor Δ C difference in concentration Δ G driving force of transformation, Gibbs free energy Δ G N...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 October 2021
DOI: 10.31399/asm.tb.ciktmse.t56020001
EISBN: 978-1-62708-389-8
... crystal growth or by mechanical deformation. Edge Dislocations An edge dislocation is created when an extra plane of atoms is inserted in the middle of the crystal above a certain plane (dotted line, known as the slip plane, shown in Fig. 3(a) . By convention, a positive (negative) dislocation has...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 January 2015
DOI: 10.31399/asm.tb.tpmpa.t54480031
EISBN: 978-1-62708-318-8
... the presence of solid nucleating agents can limit undercooling to only a few degrees. Crystal Growth After stable, solid nuclei form, crystal or grain growth occurs as more atoms from the liquid become attached to the solid ( Ref 2.1 ). However, the nature of growth depends on how the heat is removed...
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Published: 01 August 1999
nucleation of regularly spaced cementite crystals. Subsequent growth could occur by either sideways extension or repeated branching of these crystals, as sketched in (gB). (g) Nucleation and growth of a pearlite colony from a single cementite nucleus. A, cementite crystal extends along the nucleating More
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Published: 01 August 1999
. 5000×. (f) Nucleation of pearlite by multiple nucleation of regularly spaced cementite crystals. Subsequent growth could occur by either sideways extension or repeated branching of these crystals, as sketched in (gB). (g) Nucleation and growth of a pearlite colony from a single cementite nucleus More
Series: ASM Technical Books
Publisher: ASM International
Published: 01 December 2008
DOI: 10.31399/asm.tb.tm.t52320123
EISBN: 978-1-62708-357-7
... considering an interface as a multiatomic layer ( Ref 17 ). 5.4.2 Adhesion Growth and Lateral Growth If a crystal is covered with a violently rugged interface, all the atoms hitting the interface will be built in the crystal as shown in Fig. 5.15(a) , and the crystal will grow rapidly even at a low...
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Published: 01 August 2018
lateral growth in the form of austenite rods in cementite plates. Cementite maintains a preferential growth orientation based on its crystal structure. More
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Published: 01 December 2016
Fig. 1.49 (Part 1) Morphology of the silicon crystals in (αAl + Si) eutectic in AlSi11 alloy. ( a – d ) Morphology evolution due to change in cooling rate. ( a – c ) Plates of eutectic silicon, plane branching in the main growth plane. (d) Plates of eutectic silicon, dendrite branching More