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atomizers
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Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2007
DOI: 10.31399/asm.tb.smnm.t52140063
EISBN: 978-1-62708-264-8
... Abstract Diffusion is the primary mechanism by which carbon atoms move or migrate in iron. It is driven by concentration gradients and aided by heat. This chapter provides a practical understanding of the diffusion process and its role in the production and treatment of steel. It discusses...
Abstract
Diffusion is the primary mechanism by which carbon atoms move or migrate in iron. It is driven by concentration gradients and aided by heat. This chapter provides a practical understanding of the diffusion process and its role in the production and treatment of steel. It discusses the factors that determine diffusion rates and distances, including time, temperature, and the relative size of the atoms involved. It also describes two heat treating methods, carburizing and decarburizing, where carbon diffusion plays a central role.
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in Introduction to Solidification and Phase Diagrams[1]
> Titanium: Physical Metallurgy, Processing, and Applications
Published: 01 January 2015
Fig. 2.7 Atomic diameters of elements. The atom size of titanium with respect to that of alloying elements
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Published: 01 January 2015
Fig. 3.2 Atomic diameters of elements. The chart compares the atom size of titanium with other potential alloying elements.
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Published: 01 January 2015
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Published: 01 October 2011
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Published: 01 October 2011
Fig. 5.29 Water atomization system. (a) Various stages of the water atomization process. (b) Large-scale system (1,000 to 100,000 tons/year)
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Published: 31 December 2020
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in Manufacture and Characteristics of Stainless Steel Powders
> Powder Metallurgy Stainless Steels: Processing, Microstructures, and Properties
Published: 01 June 2007
Fig. 3.1 Examples of water-atomized stainless steel powder. SEM of (a) water-atomized 409L powder, (b) water-atomized 316 stainless powder of high apparent density (slightly more rounded edges); original magnified 100 times
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Published: 01 December 2008
Fig. 5.20 Motion of solvent atoms and solute atoms according to the grain-boundary movement. (a) Transfer of solvent atoms. (b) Drag of solute atoms
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Published: 01 December 2008
Fig. 8.3 The number of atoms and the ratio of atoms on the outermost layer forming a close-packed cluster. (The number of atoms on the outermost layer exceeds 50% of the total composing atoms in a smaller cluster than the type of a regular icosahedron of i = 6.)
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in Introduction to Solidification and Phase Diagrams[1]
> Titanium: Physical Metallurgy, Processing, and Applications
Published: 01 January 2015
Fig. 2.6 Types of solid solution. An interstitial atom occupies a space between the atoms of the crystal lattice. Substitutional atoms replace or substitute for an atom in the crystal structure.
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Published: 01 January 2015
Fig. 3.1 Schematic of a titanium atom. The shaded area is the inner electron core; the outer electrons are the valence electrons.
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in Melting, Casting, and Powder Metallurgy[1]
> Titanium: Physical Metallurgy, Processing, and Applications
Published: 01 January 2015
Fig. 8.40 (a) Gas atomization setup. (b) Scanning electron micrograph of a gas-atomized prealloyed spherical Ti-6Al-4V. Courtesy of Affinity International
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Published: 01 May 2018
FIG. 10.17 Arthur Compton of atomic bomb fame worked with Samuel Hoyt at the GE Central Research Labs.
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Published: 01 August 2013
Fig. 2.26 Interstitial and substitutional atoms in a metal crystal lattice. Source: Ref 2.1
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in Role of Advanced Circuit Edit for First Silicon Debug
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 37 A graph of the FIB metal resistivity values plotted with the atomic percentage of metal measured by EDS. Values for both tungsten and platinum lines are shown. [70]
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in Role of Advanced Circuit Edit for First Silicon Debug
> Microelectronics Failure Analysis: Desk Reference
Published: 01 November 2019
Figure 39 A graph of the FIB metal resistivity values plotted against the atomic percentage of gallium in the deposited lines. Values for FIB platinum, the work of Chen et al., and FIB tungsten data. [70]
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Published: 01 November 2019
Figure 9 Variation in backscatter emission with atomic number Z.
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Published: 01 November 2019
Figure 55 Atomic Force Microscope Scanning capacitance cross section shows the topographical image (a) and scanning capacitance image (b) of the failing transistor and neighboring passing transistor. An area of dopant depletion is seen in the failing transistor gate poly over the channel. AFM
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