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Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110180
EISBN: 978-1-62708-247-1
... BiCMOS technologies, and parasitic bipolar effects like latch up. CMOS inverter integrated bipolar transistors MOSFET photon emission silicon based integrated circuits Photon emission (PE) is one of the major optical techniques for contactless isolation of functional faults (CFI) in...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110613
EISBN: 978-1-62708-247-1
... Abstract Electronics spans a number of devices, their configurations, and properties. A challenge is to identify those electronic subjects essential for failure analysis. This article reviews the normal operation and terminal characteristics of MOSFET. It describes the electronic behavior of...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110279
EISBN: 978-1-62708-247-1
... , Application Overview – IV characterization of transistors using Keithley. [5] Gill Anterpreet , “ Investigation of short channel effects in Bulk MOSFET and SOI FinFET at 20nm node technology ”, Annual IEEE India Conference , 2015 10.1109/INDICON.2015.7443263 The...
Book Chapter

Series: ASM Technical Books
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.tb.ems.t53730037
EISBN: 978-1-62708-283-9
... to penetrate the base and allows current in the collector. Because the voltage across the collector is high, the output signal is at high voltage. Source: Ref 4.1 . The other type of transistor is the metal oxide semiconductor field effect transistor (MOSFET) sketched in Fig. 4.15 . The gate...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110062
EISBN: 978-1-62708-247-1
... reliability of thin-oxide re-channel MOSFETs ,” J. Y. C. Sunet al., Conf. Solid State Devices and Mater . ( Japan ), 1986 , pp. 479 . [4] Comparison of effects of ionizing radiation and high-current stress on characteristics of self-aligned bi-polar transistors , Chen T. C. , Norum J. P...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110196
EISBN: 978-1-62708-247-1
... characteristics of an idealized MOSFET in the saturated region [17] : (8) I D s a t ≅ Z μ ε o x 2 d L ( V G − V T ) 2 where Z and L are respectively the channel width and length, d is the thin oxide thickness, μ is the mobility, ε ox is the oxide...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110244
EISBN: 978-1-62708-247-1
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110042
EISBN: 978-1-62708-247-1
.... , “ Near IR Absorption in Heavily Doped Silicon - An Empirical Approach ”, Proceedings of the 26th ISTFA , 2000 . 8. Rowlette J. , Varner E. , Seidel S. “ Hot Carrier Emission from 50 nm n and p-Channel MOSFET Devices ” Conference on Lasers & Electro-Optics, (LEOS) 2003...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110153
EISBN: 978-1-62708-247-1
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110228
EISBN: 978-1-62708-247-1
... a hollowed-out metal route in which there are multiple plausible explanations for how it interacts with the laser. But more important than the explanation is that the defect has been found. When the ~1300nm laser interacts with a MOSFET transistor there will be two opposing device level...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110563
EISBN: 978-1-62708-247-1