Fig 20 Observations of reverse leakage on an Emcore VCSEL show very low leakage of undegraded device, and three orders-of-magnitude higher leakage after ESD damage at -420V HBM. Leakage increases further after aging. More

Fig. 6.81 (a) Close-up view at leakage location with leakage in the form of tiny pinholes and smooth outer surface with erosion marks where the studs had worn out. (b) Bent location showing scale deposits. (c) Inner surface view brick red in color indicating absence of protective magnetite More

Fig. 6.97 (a) Close-up view at the leakage location on OD surface with leakage in the form of a pinhole. (b) ID surface indicating fine pits as well as groove-like metal wastage More

Figure 2 STEM images of a silicide spike causing junction leakage. (a) High angle annular dark field (HAADF) or mass contrast image from a planar sample and, (b) HAADF and Bright Field (BF) images from a cross-section sample extracted from the planar sample. More

Fig. 8 Reverse bias leakage of LEDs. All LEDs are still working. Light blue: LED shortly before end of lifetime with high RBL leakage. Red: medium RBL, showing that the LED has at least one intrinsic failure. Dark blue: perfect LED, no RBL, RBL characteristics similar like a Zener diode. More

Fig. 9 Reverse bias leakage at an LED, localized by OBIRCH (left, blue spot). Operation in forward direction (center), showing a small dark spot at the point of reverse bias leakage. After about a quarter of expected lifetime, the dark spot increased significantly, thus reducing the total More

Figure 2 Common causes for the Ta CAPS’ high leakage or short failure condition [8] . More

Figure 10 Typical causes for high leakage or short failures of Al-CAP. More

Figure 2 I-V characteristic curve comparing good (horizontal line) and leakage pins (curved vertical line). More

Figure 5 Site of leakage failure revealed by emission carriers. More

Figure 7 Diagram of MCM module. Capacitor leakage site is identified with arrow on side facing the die. More

Figure 9 Thinned capacitor location of greatest disturb to the monitored leakage and the correct position to move to SEM with EDX analysis. More

Fig. 8 Influence of leakage resistance to the voltage building up at the structure during ion beam scan More

Figure 20 Illustration showing the leakage current flows from the Gate to Source through the gate oxide damage/defect. More

Figure 22 Illustration showing the leakage current flows from the Gate to Drain through the gate oxide damage/defect and the forward biased LDD – Active p+ junction on the Drain side of the channel. The sweep results in a diode curve. More

Figure 24 Illustration showing the leakage current flows from the Source to Drain through the damaged Source LDD- Active p+ junction, through the channel, and through forward biased LDD – Active p+ junction on the Drain side of the channel. The sweep results in a diode curve. When the Drain More

Figure 26 Illustration showing the leakage current flows from the Source to Drain through the gate oxide damage/defect and the forward biased LDD – Active p+ junction on the Source side of the channel. The sweep results in a diode curve. More

Figure 28 Illustration showing the leakage current flows from the Gate to Drain through the gate oxide damage/defect and the forward biased LDD – Active p+ junction on the Drain side of the channel. The sweep results in the diode curve. More

Figure 30 Illustration showing the leakage current flowing from the Drain to Source or Source to Drain. The pathway contains back to back Source/Drain LDD diode junctions in either direction of current flow significantly reducing the amount of leakage current to the low nA level. This amount More

Figure 37 Plain-view TEM image for the transistor that had Drain to Well leakage. A dislocation in the active silicon of the Drain at the edge of the trench isolation is clearly visible. More