Structural steels are used for components such as I-beams and automobile frames. This chapter focuses on processing these steels to attain a fine primary ferrite grain size to develop high strength. It first reviews the concepts and principles of recrystallization in plastically deformed metals. The chapter reviews the concepts of annealing of cold worked metals. It then looks at hot working and the grain size associated with it. Additionally, the chapter reviews the methods of strengthening in the steels that rely mainly on reduction in the primary ferrite grain size. It discusses basic methods used to develop a small austenite grain size, and hence a small primary ferrite grain size. Then, the chapter covers the processes involved in the precipitation hardening of the ferrite. Finally, it examines some commercial thermomechanical processes used on structural steels, namely hot deformation and controlled cooling.

This article is intended to help engineers understand why the fatigue behavior of weldments can be such a confusing and seemingly contradictory topic and hopefully to clarify this complex subject. It first reexamines the factors influencing the fatigue behavior of an individual weldment using extensive experimental data and a computer model that simulates the fatigue resistance of weldments. Next, the process of fatigue in weldments is discussed in general terms, and the service conditions that favor long crack growth and the conditions that favor crack nucleation are contrasted. The article then presents experimental data that show the effect of weldment geometry on fatigue resistance. Several useful geometry classification systems are compared. Finally, a computer model is employed to investigate the behavior of two hypothetical weldments: a discontinuity-containing ("Nominal") weldment and a discontinuity-free ("Ideal") weldment.

This chapter identifies the primary causes of service failures and discusses the types of defects from which they stem. It presents more than a dozen examples of failures attributed to such causes as design defects, material defects, and manufacturing or processing defects as well as assembly errors, abnormal operating conditions, and inadequate maintenance. It also describes the precise usage of terms such as defect, flaw, imperfection, and discontinuity.

Distortion failures are readily identified by the inherent change in size and/or shape. They are serious because they can lead to other types of failure or may even cause complete collapse of structures, such as bridges, ladders, beams, and columns. Distortion failures may be classified in different ways. One way is to consider them either as dimensional distortion (growth or shrinkage) or as shape distortion (such as bending, twisting, or buckling). They may also be classified as being either temporary or permanent in nature. This chapter discusses the nature, causes, and effects of all of these types of failures as well as the methods to manage them.

This appendix explains how to identify crystallographic planes and directions. It shows how Miller indices, a system for specifying crystallographic planes within a unit cell, are determined for cubic and hexagonal systems. It also explains how x-ray diffraction techniques are used in the study of crystalline structures.

This chapter discusses the principles of scanning transmission electron microscopy (STEM) as implemented using conventional scanning electron microscopes (SEMs). It describes the pros and cons of low-energy imaging and diffraction, addresses basic hardware requirements, and provides information on imaging modes, detector positioning and alignment, and the effect of contrast reversal. It also discusses beam convergence and angular selectivity, the use of application-specific masks, and how to generate grain orientation maps for different material systems.

With semiconductor device dimension continuously scaling down and increasing complexity in integrated circuits, delayering techniques for reverse engineering is becoming increasingly challenging. The primary goal of delayering in semiconductor failure analysis is to successfully remove layers of material in order to locate and identify the area of interest. Several of the top-down delayering techniques include wet chemical etching, dry reactive ion etching, top-down parallel lapping (including chemical-mechanical polishing), ion beam milling and laser delayering techniques. This article discusses the general procedure, types, advantages, and disadvantages of each of these techniques. In this article, two types of different semiconductor die level backend of line technologies are presented: aluminum metallization and copper metallization.

This appendix defines abbreviations, acronyms, and symbols presented within this book.

This article provides an overview of the most common micro-analytical technique in the failure analysis laboratory: energy dispersive X-ray spectroscopy (EDS). It discusses the general characteristics, advantages, and disadvantages of some of the X-ray detectors attached to the scanning electron microscope chamber including the lithium-drifted EDS detector, silicon drift detector (SDD), and wavelength dispersive X-ray detector. The article then provides information on qualitative and quantitative X-ray analysis programs followed by a discussion on EDS elemental mapping. The discussion includes a comparison of scanning transmission electron microscope-EDS elemental mapping and mapping with an SDD. A brief section is devoted to the discussion on the artifacts that occur during X-ray mapping.

This chapter addresses the challenge of selecting an appropriate stress-corrosion cracking (SCC) test to evaluate the serviceability of a material for a given application. It begins by establishing a generic model in which SCC is depicted in two stages, initiation and propagation, that further subdivide into several zones plus a transition region. It then discusses SCC test standards before describing basic test objectives and selection criteria. The chapter explains how to achieve the required loading conditions for different tests and how to prepare test specimens to determine elastic strain, plastic strain, and residual stress responses. It also describes the difference between smooth and precracked specimens and how they are used, provides information on slow-strain-rate testing and how to assess the results, and discusses various test environments and procedures, including tests for weldments. The chapter concludes with a section on how to interpret time to failure, threshold stress, percent survival, stress intensity, and propagation rate data, and assess the precision of the associated tests.