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FinFET device

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Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110279
EISBN: 978-1-62708-247-1
... technology from design to manufacturing and the characterization methods are discussed. The focus is on two prominent MOS structures: planar MOS device and FinFET device. The article covers the device parameters and device properties that determine the design criteria and the device tuning procedures. The...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110323
EISBN: 978-1-62708-247-1
... resolution thus greatly improving the accuracy of the fault isolation. Several key functions or techniques developed by Intel TD lab using the electron voltage contrast on FinFET devices will be shown below. All the samples used in the electron beam probing cases were prepared using dimpling or plasma FIB on...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110485
EISBN: 978-1-62708-247-1
.... A cross sectional SCM dopant profile of 14 nm technology FinFETs is shown in Figure 18 . The sample was prepared by polishing and finishing with a 0.04 μm colloidal silica slurry followed by a surface oxidation treatment [10] . The dark area on the left side of the image has p -channel fins while...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110461
EISBN: 978-1-62708-247-1
... FinFET structure. Recently, 3D imaging (application and limitation of 3D STEM tomography) followed by introduction of 3D chemical maps (3D EDS elemental tomography) have been employed and proposed in such cases to understand the true elemental distribution in the device for characterization and failure...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110180
EISBN: 978-1-62708-247-1
... immersion lens, ” Journal of the Optical Society of America , vol. 21 , no. 7 , pp. 1186 – 1191 , Jul . 2004 . 10.1364/JOSAA.21.001186 • Vogt I. , et al. , “ Device characterization of 16/14 nm FinFETs for reliability assessment with infrared emission spectra, ” Journal of...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110379
EISBN: 978-1-62708-247-1
.... “ Microelectronic device delayering using an adjustable broad-beam ion source ” [12] Alvis Roger et al. , “ Plasma FIB DualBeam TM Delayer for Atomic Force NanoProbing TM of 14nm FinFET Devices in an SRAM Array ,” Conference Proceedings from the 41st ISTFA 2015 , pp. 412 - 424 [13...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110153
EISBN: 978-1-62708-247-1
...=Bond [29] Gallium Phosphide as a material for visible and infrared optics Václavík J. , et al , https://www.epj-conferences.org/articles/epjconf/pdf/2013/09/epjconf_OAM2012_00028.pdf 10.1051/epjconf/20134800028 [30] ISTFA 2016-Page 31 - Contactless Fault Isolation for FinFET...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110228
EISBN: 978-1-62708-247-1
... pulsed laser to fault isolate bridging defects and framing high accuracy Physical FA plan in 14nm FinFET technologies . In ISTFA 2017: Proceedings from the 43rd International Symposium for Testing and Failure Analysis (p. 196 ). ASM International . [20] Serrels K. A. , Erington K...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110351
EISBN: 978-1-62708-247-1
..., large arrays of FinFET transistors in logic blocks across immense areas of common diffusion create a challenging environment in which to navigate. The limitation of IR based imaging is fundamental based on the Rayleigh criterion of resolution R for a given wavelength R(λ)= ~λ/2NA. Figure 3 shows a...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110285
EISBN: 978-1-62708-247-1
... Isolation Inside a FinFET Using E-beam Alteration of Current Flow ,” Proc 43rd International Symposium for Testing and Failure Analysis , Pasadena, CA, USA , November 2017 , pp. 473 - 475 In the late 1990s to early 2000’s, the semiconductor industry was in the process of transitioning from...
Series: ASM Technical Books
Publisher: ASM International
Published: 01 November 2019
DOI: 10.31399/asm.tb.mfadr7.t91110244
EISBN: 978-1-62708-247-1
... Heiko , et al. , “ Contactless fault isolation for FinFET technologies with visible light and GaP SIL ”, Proceedings from the 42nd International Symposium for Testing and Failure Analysis (ISTFA) , pp. 19 - 26 ( 2016 ) [45] Leslie N. and Nemirow C. , “ The Effects of Using 785nm...