Phase diagrams serve as a map to the phases present in an alloy at different temperatures and compositions. They also help in assessing mechanical properties, selecting heat treat temperatures, warning of possible solidification problems, and identifying routes for creating desired microstructures. This chapter familiarizes readers with the information contained in binary phase diagrams and the methods used to extract it. It explains how thermocouple measurements are used to determine liquidus, solidus, and eutectic reaction lines, how differential scanning calorimetry shows where phase reactions occur, and how x-ray diffraction identifies the actual phases present. It demonstrates the use of tie lines for determining phase composition at different temperatures and the application of the level rule to calculate phase fractions. It also discusses the CALPHAD method and presents computed binary phase diagrams that account for the presence of inclusions, oxygen content, and secondary phases.

This chapter familiarizes readers with the basic theory of molecular dynamics and its application in the study of materials. It explains how material properties and behaviors are determined through the iterative calculation of motion equations for a collection of atoms under a given set of conditions. It also provides a walk-through on the use of LAMMPS, an open-source molecular dynamics simulator, discussing the selections and inputs of relevance to practical materials problems.

The appendix contains detailed simulation examples through which readers learn how to format and analyze problems using the LAMMPS molecular dynamics simulator. By means of simulation, readers will determine the thermal expansion coefficient of copper, generate stress-strain plots for aluminum at different temperatures, calculate the surface energy of copper for different crystal orientations, investigate diffusion effects in BCC iron, estimate the sliding friction between graphene layers, compare the stacking fault energy of silver and aluminum, and analyze the properties and behaviors of liquids and gases. All examples employ a systematic problem-solving approach and include necessary input code.

This chapter describes the attributes of aluminum products that are critical for key structural applications. It covers the selection criteria and evaluations performed by the aluminum supplier or customer: physical attributes, mechanical properties (tensile, fracture, and fatigue), and corrosion.

This appendix tabulates chemical composition limits for commonly used wrought aluminum alloys registered with the Aluminum Association (AA).

This appendix tabulates chemical composition limits for commonly used aluminum casting alloys registered with the Aluminum Association (AA).

This appendix tabulates temper designations and product forms of heat-treatable aluminum alloys.

This chapter, presented in a question-and-answer format, covers many practical aspects of high-entropy alloys (HEAs). It provides clear and concise answers to more than 50 questions, imparting knowledge on alloying elements, heat treatments, diffusion mechanisms, phase formation, lattice distortion, crystal and grain structures, structure-property relationships, microstructure control, and characterization methods. It likewise explains how to calculate the effect of strengthening processes on the mechanical properties of HEAs and offers insights on how to balance strength, ductility, and density for specific applications. It also provides information on twinning behaviors, stacking faults, elastic properties, coating and film deposition methods, manufacturing challenges, and the use of computational techniques for alloy design.

This chapter provides an overview of how the disciplines of design, material, and manufacturing contribute to engineering for functional performance. It describes the interaction of product designers and casting engineers in product development. It discusses the consequences of component failure, uncertainty in data and assumptions, and selection of the factor of safety. The chapter also presents an overview of the functional requirements for product performance and provides an overview of product design development. It also presents a partial list of the different tests that are performed on prototypes and examples of product testing. The chapter describes the requirements of a traceability system.

This chapter discusses the effect of friction in the context of design. It explains how friction coefficients are determined and how they are used to make sizing and selection decisions. It covers practical issues associated with rolling friction, the use of lubricants, and the tribology of metal, ceramic, and polymer surfaces in contact. It also discusses the nature of rolling friction and provides helpful design guidelines.

This chapter provides guidelines and insights on the selection of materials, coatings, and treatments for friction and wear applications. It begins with a review of the system nature of tribological effects, the subtleties of friction, and the selection idiosyncrasies of the material systems and lubricants covered in prior chapters. It then presents a systematic approach for selecting tribomaterials, using an automotive fan motor as an example.

Transistors are the most important active structure of any semiconductor component. Performance characteristics of such devices within the specifications are key to ensuring proper functionality and long-term reliability of the product. In this article, a summary of the semiconductor technology from design to manufacturing and the characterization methods are discussed. The focus is on two prominent MOS structures: planar MOS device and FinFET device. The article covers the device parameters and device properties that determine the design criteria and the device tuning procedures. The discussion includes the effects of drain induced barrier lowering, velocity saturation, hot carrier degradation, and short channel on these devices.

This article addresses the ancillary issues regarding the nanoprobing and characterization of transistors, probing copper metallization layers, and the various imaging techniques. The discussion includes several characterization examples of known transistor failure types, namely four probe transistor characterization, two probe transistor characterization, and probing and characterizing metallization issues. The imaging techniques discussed are those that are specific to atomic force nanoprober or scanning electron microscope based tools. They are current contrast imaging, scanning capacitance imaging, e-beam absorbed current imaging, e-beam induced current imaging, e-beam induced resistance change imaging, and active voltage contrast imaging.

This article presents methods that enable one to consistently, uniformly and quickly remove substrate silicon from units without imparting damage to the structure of interest. It provides examples of electron beam probing and backside nano-probing techniques. The electron beam probing techniques are E-beam Logic State Imaging, Electron-beam Signal Image Mapping, and E-beam Device Perturbation. Backside nano-probing techniques discussed include: Electron Beam Absorbed Current, Electron Beam Induced Resistance Change, four terminal resistance measurements, resistive gate defect identification, and circuit editing. The article also presents methods to prepare electron beam probing samples where some remaining silicon is required for the transistor functions and transmission electron microscope samples from units where the substrate silicon has been partially or completely removed.