This chapter describes the attributes of aluminum products that are critical for key structural applications. It covers the selection criteria and evaluations performed by the aluminum supplier or customer: physical attributes, mechanical properties (tensile, fracture, and fatigue), and corrosion.

This appendix tabulates chemical composition limits for commonly used wrought aluminum alloys registered with the Aluminum Association (AA).

This appendix tabulates chemical composition limits for commonly used aluminum casting alloys registered with the Aluminum Association (AA).

This appendix tabulates temper designations and product forms of heat-treatable aluminum alloys.

This chapter, presented in a question-and-answer format, covers many practical aspects of high-entropy alloys (HEAs). It provides clear and concise answers to more than 50 questions, imparting knowledge on alloying elements, heat treatments, diffusion mechanisms, phase formation, lattice distortion, crystal and grain structures, structure-property relationships, microstructure control, and characterization methods. It likewise explains how to calculate the effect of strengthening processes on the mechanical properties of HEAs and offers insights on how to balance strength, ductility, and density for specific applications. It also provides information on twinning behaviors, stacking faults, elastic properties, coating and film deposition methods, manufacturing challenges, and the use of computational techniques for alloy design.

This chapter provides an overview of how the disciplines of design, material, and manufacturing contribute to engineering for functional performance. It describes the interaction of product designers and casting engineers in product development. It discusses the consequences of component failure, uncertainty in data and assumptions, and selection of the factor of safety. The chapter also presents an overview of the functional requirements for product performance and provides an overview of product design development. It also presents a partial list of the different tests that are performed on prototypes and examples of product testing. The chapter describes the requirements of a traceability system.

This chapter discusses the effect of friction in the context of design. It explains how friction coefficients are determined and how they are used to make sizing and selection decisions. It covers practical issues associated with rolling friction, the use of lubricants, and the tribology of metal, ceramic, and polymer surfaces in contact. It also discusses the nature of rolling friction and provides helpful design guidelines.

This chapter provides guidelines and insights on the selection of materials, coatings, and treatments for friction and wear applications. It begins with a review of the system nature of tribological effects, the subtleties of friction, and the selection idiosyncrasies of the material systems and lubricants covered in prior chapters. It then presents a systematic approach for selecting tribomaterials, using an automotive fan motor as an example.

Transistors are the most important active structure of any semiconductor component. Performance characteristics of such devices within the specifications are key to ensuring proper functionality and long-term reliability of the product. In this article, a summary of the semiconductor technology from design to manufacturing and the characterization methods are discussed. The focus is on two prominent MOS structures: planar MOS device and FinFET device. The article covers the device parameters and device properties that determine the design criteria and the device tuning procedures. The discussion includes the effects of drain induced barrier lowering, velocity saturation, hot carrier degradation, and short channel on these devices.

This article addresses the ancillary issues regarding the nanoprobing and characterization of transistors, probing copper metallization layers, and the various imaging techniques. The discussion includes several characterization examples of known transistor failure types, namely four probe transistor characterization, two probe transistor characterization, and probing and characterizing metallization issues. The imaging techniques discussed are those that are specific to atomic force nanoprober or scanning electron microscope based tools. They are current contrast imaging, scanning capacitance imaging, e-beam absorbed current imaging, e-beam induced current imaging, e-beam induced resistance change imaging, and active voltage contrast imaging.

This article presents methods that enable one to consistently, uniformly and quickly remove substrate silicon from units without imparting damage to the structure of interest. It provides examples of electron beam probing and backside nano-probing techniques. The electron beam probing techniques are E-beam Logic State Imaging, Electron-beam Signal Image Mapping, and E-beam Device Perturbation. Backside nano-probing techniques discussed include: Electron Beam Absorbed Current, Electron Beam Induced Resistance Change, four terminal resistance measurements, resistive gate defect identification, and circuit editing. The article also presents methods to prepare electron beam probing samples where some remaining silicon is required for the transistor functions and transmission electron microscope samples from units where the substrate silicon has been partially or completely removed.

Semiconductor memories are superb drivers for process yield and reliability improvement because of their highly structured architecture and use of aggressive layout rules. This combination provides outstanding failure signature analysis possibilities for the entire design, manufacturing, and test process. This article discusses five key disciplines of the signature analysis process that need to be orchestrated within the organization: design for test practices, test floor data collection methodology, post-test data analysis tools, root cause theorization, and physical failure analysis strategies.

Optoelectronic components can be readily classified as active light-emitting components (such as semiconductor lasers and light emitting diodes), electrically active but non-emitting components, and inactive components. This chapter focuses on the first category, and particularly on semiconductor lasers. The discussion begins with the basics of semiconductor lasers and the material science behind some causes of device failure. It then covers some of the common failure mechanisms, highlighting the need to identify failures as wearout or maverick failures. The chapter also covers the capabilities of many key optoelectronic failure analysis tools. The final section describes the common steps that should be followed so as to assure product reliability of optoelectronic components.

This chapter presents an overview of microprocessor and application specific integrated circuit (IC) testing. It begins with a description of key industry trends that will impact how ICs will be tested in the future. Next, it provides a brief description of the most common tests applied in the IC industry, where technical issues that are causing methodology changes are emphasized. These include functional testing, structural testing, scan-based delay testing, built-in self-testing, memory testing, analog circuit testing, system-on-a-chip testing, and reliability testing. Trends discussed have driven the development of novel focus areas in test and the chapter discusses several of those areas, including test data volume containment, test power containment, and novel methods of defect-based test.

This article describes the most common, general-purpose analog design-for-test (DFT) methods, analog test buses and loopback, and shows their advantages and limitations in diagnosability and automatability. It also describes DFT and built-in self-test (BIST) techniques for the most common analog functions, namely phase-locked loop, serializer-deserializer, analog/digital converters, and radio frequency. Lastly, the challenges of creating BIST for analog functions are summarized, along with seven principles that must be exploited to meet these challenges. These principles show how the design constraints for analog BIST circuitry can be more relaxed than for the circuit under test, while delivering the required test accuracy and speed.

This chapter surveys both basic quality and basic reliability concepts as an introduction to the failure analysis professional. It begins with a section describing the distinction between quality and reliability and moves on to provide an overview of the concept of experiment design along with an example. The chapter then discusses the purposes of reliability engineering and introduces four basic statistical distribution functions useful in reliability engineering, namely normal, lognormal, exponential, and Weibull. It also provides information on three fundamental acceleration models used by reliability engineers: Arrhenius, Eyring, and power law models. The chapter concludes with information on failure rates and mechanisms and the two techniques for uncovering reliability issues, namely burn-in and outlier screening.

This chapter presents guidelines for product designers to choose the best process and alloys while designing a casting. The discussion covers some of the factors pertinent to the selection of the best process for the product function and performance, namely geometric factors, mechanical properties, tooling cost per piece, and overall cost factors. The chapter contains tables listing several markets, products, popular processes, and common alloys and the common processes used for a variety of markets and products.