Failure Localization with Active and Passive Voltage Contrast in FIB and SEM

Rosenkranz, Ruediger

doi:10.31399/asm.tb.mfadr7.t91110269

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ASM Technical Books

Microelectronics Failure Analysis: Desk Reference (Seventh Edition)

Edited by

ASM International

DOI:

https://doi.org/10.31399/asm.mfadr7.9781627082471

ISBN electronic:

978-1-62708-247-1

Publication date:

2019

Book Chapter

Failure Localization with Active and Passive Voltage Contrast in FIB and SEM^[1]

Ruediger Rosenkranz

Fraunhofer Institute for Nondestructive Testing

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Doi:

https://doi.org/10.31399/asm.tb.mfadr7.t91110269

Published:

2019

Page range:

269 - 278

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Abstract

This chapter provides a comprehensive overview over all phenomena related to Voltage Contrast (VC) mechanisms in SEM and FIB. The multiple advantages, possibilities, and limits of active and passive VC failure localization are systemized and discussed. The knowledge of all facts influencing the VC generation (capacitance, leakage, doping, and circuitry) is very helpful for successful failure localization.

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Failure Localization with Active and Passive Voltage Contrast in FIB and SEM[1]

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Failure Localization with Active and Passive Voltage Contrast in FIB and SEM^[1]