STEM in SEM: Introduction to Scanning Transmission Electron Microscopy for Microelectronics Failure Analysis

Scanning electron microscopes (SEMs) are an essential tool for analyzing microelectronic failures. They reveal features over multiple length scales and can be used, with appropriate detectors, to examine grain size and orientation, compositional distributions, atomic contrast, and more. This book, STEM-in-SEM: Introduction to Scanning Transmission Electron Microscopy for Microelectronics Failure Analysis, explains how SEMs equipped with transmission electron detectors, besides producing higher-resolution images, reveal additional details such as diffraction patterns, grain texture, sample thickness, and subsurface defects. The STEM-in-SEM approach is also more economical and easier to master than conventional transmission electron microscopy and has the potential to be used in manufacturing environments.