This chapter provides a comprehensive overview over all phenomena related to Voltage Contrast (VC) mechanisms in SEM and FIB. The multiple advantages, possibilities, and limits of active and passive VC failure localization are systemized and discussed. The knowledge of all facts influencing the VC generation (capacitance, leakage, doping, and circuitry) is very helpful for successful failure localization.
Ruediger Rosenkranz, 2019. "Failure Localization with Active and Passive Voltage Contrast in FIB and SEM", Microelectronics Failure Analysis: Desk Reference, Tejinder Gandhi
Download citation file:
ASM Reference Publications Catalog
The Fall / Winter 2019-2020 Catalog features more than 200 products including new and upcoming releases, popular best sellers, digital databases, and journals. Save now with set sales.