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Zixiao Pan
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Proceedings Papers
Fast Turn-around Failure Analysis of Metal Interconnection Using FIB and LA ICP-MS
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ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 285-289, November 14–18, 2010,
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for content titled, Fast Turn-around Failure Analysis of Metal Interconnection Using FIB and LA ICP-MS
This paper introduces our effort in failure analysis of a 200 nm thick metal interconnection on a glass substrate and covered with a passivation layer. Structural damage in localized areas of the metal interconnections was observed with the aid of focused ion beam (FIB) cross-sectioning. Laser ablation inductively coupled plasma mass spectroscopy (LA ICP-MS) was then applied to the problematic areas on the interconnection for chemical survey. LA ICP-MS showed direct evidence of localized chemical contamination, which has likely led to corrosion (or over-etching) of the metal interconnection and the assembly failure. Due to the high detection sensitivity of LA ICP-MS and its compatibility with insulating material analysis, minimal sample preparation is required. As a result, the combination of FIB and LA ICP-MS enabled successful meso-scale failure analysis with fast turnaround and reasonable cost.