Skip Nav Destination
Close Modal
Update search
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
NARROW
Format
Topics
Subjects
Article Type
Volume Subject Area
Date
Availability
1-2 of 2
Z. Ma
Close
Follow your search
Access your saved searches in your account
Would you like to receive an alert when new items match your search?
Sort by
Proceedings Papers
ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 345-348, October 28–November 1, 2018,
Abstract
View Paper
PDF
This paper shows for the first time chip level electron beam probing on fully functional 10nm and 14nm node FinFET chips with sub-fin level resolution using techniques developed in house. Three novel electron beam probing techniques were developed and used in the debug and fault isolation of advanced node semiconductor devices. These techniques were E-beam logic state imaging, electron-beam signal image mapping, and E-beam device perturbation. Two tools that can offer all three techniques were constructed and used in production. The techniques have been successfully applied to real case chip debug and fault isolation on advanced 10nm and 14nm FinFET on production tools developed in-house. Sub-fin level resolution was achieved for the first time.
Proceedings Papers
ITSC 2007, Thermal Spray 2007: Proceedings from the International Thermal Spray Conference, 468-471, May 14–16, 2007,
Abstract
View Paper
PDF
6~8% Y 2 O 3 partially stabilized ZrO 2 (YPSZ) nanostructured coatings were fabricated by atmospheric plasma spraying (APS). The fractured cross-section morphologies of the samples were observed by scanning electron microscopy (SEM). The thermal conductivities of free-standing pure nanostructured YPSZ coatings samples were determined using the laser flash technique. Specific heat was measured through a differential scanning calorimeter. The results showed that there is a great difference between the fractured cross-section microstructure of nanostructured and conventional zirconia coatings. The nanostructured one exhibits a bimodal distribution of microstructure, viz. directional crystal and isometric crystal structure. Plasma spraying parameters have a significant effect on the microstructure through changing the content of isometric crystal structure in the coating. The thermal conductivity decreased with increased isometric crystal microstructure content. The thermal conductivity can be lowered up to 60%.