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Yoram Shapira
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Proceedings Papers
Indirect Electrostatic Discharge Stressing Mechanism in VLSI Chips with Multiple Power Supply Domains
Available to Purchase
ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 389-392, November 12–16, 2006,
Abstract
View Papertitled, Indirect Electrostatic Discharge Stressing Mechanism in VLSI Chips with Multiple Power Supply Domains
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for content titled, Indirect Electrostatic Discharge Stressing Mechanism in VLSI Chips with Multiple Power Supply Domains
Indirect electrostatic discharge stressing of a chip with multiple isolated power domains was analyzed. The stress penetrates to the victim domain via common nets having nonnegligible complex impedance and via coupling of the interdomain parasitic capacitors and in some cases may cause chip damage.
