The Advanced Materials and Manufacturing Technologies (AMMT) program is aiming at the accelerated incorporation of new materials and manufacturing technologies into nuclear-related systems. Complex Ni-based components fabricated by laser powder bed fusion (LPBF) could enable operating temperatures at T > 700°C in aggressive environments such as molten salts or liquid metals. However, available mechanical properties data relevant to material qualification remains limited, in particular for Ni-based alloys routinely fabricated by LPBF such as IN718 (Ni- 19Cr-18Fe-5Nb-3Mo) and Haynes 282 (Ni-20Cr-10Co-8.5Mo-2.1Ti-1.5Al). Creep testing was conducted on LPBF 718 at 600°C and 650°C and on LPBF 282 at 750°C. finding that the creep strength of the two alloys was close to that of wrought counterparts. with lower ductility at rupture. Heat treatments were tailored to the LPBF-specific microstructure to achieve grain recrystallization and form strengthening γ' precipitates for LPBF 282 and γ' and γ" precipitates for LPBF 718. In-situ data generated during printing and ex-situ X-ray computed tomography (XCT) scans were used to correlate the creep properties of LPBF 282 to the material flaw distribution. In- situ data revealed that spatter particles are the potential causes for flaws formation in LPBF 282. with significant variation between rods based on their location on the build plate. XCT scans revealed the formation of a larger number of creep flaws after testing in the specimens with a higher initial flaw density. which led to a lower ductility for the specimen.

Semiconductor Test Site structures were analyzed using an EBIRCH (Electron Beam Induced Resistance CHange) system. Localization of a RX (active area) to PC (gate) short was achieved with resolution that surpassed that of OBIRCH (Optical Beam Induced Resistance CHange). A voltage breakdown test structure at Metal 1 was stressed in the system, giving isolation to the specific contact. A five-fin diode macro was examined, and it is believed that the electrically active diffusions were imaged as individual fins from Metal 1. A series of ring oscillator devices were examined in steady state condition, and careful consideration of the image supports a hypothesis that Seebeck effect, from heating material interfaces in an EBIRCH system, is the reason for the “dipoles” reported in earlier literature.

E-beam Inspection (EBI) is used for in-line detection of defects in semiconductor manufacturing. This paper highlights a physical defect mode application where traditional defect inspection techniques, such as broadband plasma and dark field inspection were ineffective in finding the defects of interest. It describes the inspection setup and verification with failure analysis and the application of the technique. This inspection was implemented as a process monitor to detect excursions. The amount of process "ON" time after an etch-chamber part's change was identified as the main factor in MOAT defectivity. The correlation between EBI defect detection and leakage at in-line electrical test was further investigated by looking at each individual die and the leakage associated with the MOAT only. It was observed that the increased leakage could be due to another process factor in the process than a MOAT etch or a MOAT defect that was missed during the EBI inspection.